Abstract: A display panel comprises a substrate, active switches and light-emitting diodes formed on the substrate. The active switches are disposed between the substrate and the light-emitting diodes. Each light-emitting diode comprises a first electrode, a second electrode, and a quantum dot luminescent layer. The quantum dot luminescent layer comprises a mesoporous frame. The mesoporous frame adopts a self-assembling form, the mesoporous frame serves as a main material, and quantum dots are disposed in the mesoporous frame. The first electrode, the quantum dot luminescent layer and the second electrode are stacked in order. Since the quantum dots are disposed in the mesoporous frame, the sizes of the quantum dots and the uniformity of their arrangement are adjusted and controlled, the light-emitting diodes with different luminous colors depending on the sizes of the quantum dots are then adjusted.

Abstract: The present application discloses a display panel and method of manufacturing thereof. The display panel of the present application includes a substrate, an active switch, a color photoresist layer, a first electrode layer, a light emitting diode, a second electrode layer, an encapsulation layer and a driver circuit. The light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer which includes a silicon-germanium quantum dot material.

Abstract: The present application discloses a display panel, a display device and a manufacturing method. The display panel includes light-emitting diodes. The light-emitting diodes includes a blue luminescent layer. The blue luminescent layer includes a germanium silicon quantum dot material. A proportion range of a silicon element in the light-emitting diodes is 65%-90%, and a proportion range of a germanium element is 10%-35%.

Abstract: The present application discloses a display panel and a display device. The display panel includes: a substrate having a plurality of pixel regions; at least one active switch formed on the substrate; a transparent conductive layer electrically connected to the active switch; an Organic Light-Emitting Diode (OLED) formed on the transparent conductive layer; and a common electrode layer covering the OLED. The active switch includes a semiconductor layer. The semiconductor layer is made of a germanium-containing semiconductor material and has an electron mobility greater than 3 cm2/vs.

Abstract: The present application discloses a display panel and a display device. The display panel includes a substrate; an active switch, which is arrange on the substrate and includes a first active switch and a second active switch; a pixel, which is arrange on the substrate and coupled to the first active switch and includes a quantum dot light-emitting diode; and a light sensor, which is arrange on the substrate and coupled to the second active switch and includes a quantum dot light sensing layer.

Abstract: Disclosed are a method and a device for manufacturing an array substrate, and an array substrate. The method includes: depositing and forming a gate insulation layer on a pre-formed base substrate and a pre-formed gate, the gate insulation layer covering the pre-formed gate; depositing and forming an amorphous silicon layer, a doped amorphous silicon layer including at least three doped layers, and a metal layer on the gate insulation layer in sequence, doping concentrations of the at least three doped layers of the doped amorphous silicon layer increasing from bottom to top; etching patterns of the amorphous silicon layer, the doped amorphous silicon layer and the metal layer to form the array substrate.

Abstract: The present disclosure discloses a manufacturing method for an array substrate and an array substrate. The method includes: forming a gate electrode, a gate insulating layer, a semiconductor layer, a source drain electrode layer and a photoresist layer on a substrate; patterning the photoresist layer to form a patterned photoresist layer; performing at least one wet etching on the source drain electrode layer and performing at least one dry etching on the semiconductor layer; performing an ashing processing between the steps of the wet etching and the dry etching. A ratio of a lateral etching rate to a longitudinal etching rate in the at least one ashing processing ranges from 1:0.9 to 1:1.5.

Abstract: This application provides a method for manufacturing an array substrate, an array substrate, and a display panel. A gate metal layer, a gate insulating layer, and a semiconductor active layer are formed by using one photomask process, a first passivation layer is formed in one photomask process, and a source metal layer, a drain metal layer, and a pixel electrode layer are formed on the first passivation layer.

Abstract: The present application discloses a display panel and method of manufacturing thereof. The display panel of the present application includes a substrate, an active switch, a color photoresist layer, a first electrode layer, a light emitting diode, a second electrode layer, an encapsulation layer and a driver circuit. The light emitting diode includes a red light emitting layer, a green light emitting layer and a blue light emitting layer which includes a silicon-germanium quantum dot material.

Abstract: Disclosed is a photosensitive component, including: an intrinsic layer; a first doped layer provided on a light incident side of the intrinsic layer; and a second doped layer provided on a light exit side of the intrinsic layer; the intrinsic layer, the first doped layer and the second doped layer are all doped with a dopant, and silicon ions are injected into the intrinsic layer, the first doped layer and the second doped layer. An X-ray detector and a display device are further disclosed.

Abstract: Disclosed are an X-ray detector, a method for manufacturing an X-ray detector and a medical equipment. The X-ray detector includes a scintillator (10); a photosensitive layer (80) including a photoelectric conversion layer (90) and a transparent conductive film (40) located between the scintillator (10) and the photoelectric conversion layer (90); the photoelectric conversion layer (90) being a uniform porous structure, and a pore of the photoelectric conversion layer being filled with a silicon particle (92); a signal reading device electrically connected to the photosensitive layer (80); and a light shielding member (30) corresponding to a position of an active layer (70) of the signal reading device to shield an incident light from the active layer (70).

Abstract: A display panel and a display device are provided. The display panel includes a substrate; a first metal layer disposed on the substrate; an insulating layer disposed on the first metal layer; a semiconductor layer disposed on the insulating layer and including a germanium-doped semiconductor compound; and a second metal layer disposed on the semiconductor layer. A mobility of the semiconductor compound is greater than a mobility of amorphous silicon.

Abstract: Disclosed are a ray converter and a ray detection panel device. The ray converter (100, 100?) includes a substrate (110) and a conversion body (120). The substrate (110) includes a medium carrier. The medium carrier has a mesoporous structure distributed in an array. A pore of the mesoporous structure extends from an entrance end of the substrate (110) to an exit end of the substrate (110). The conversion body (120) is filled in the pore. The ray detection panel device includes a ray converter (100, 100?) and a light sensor.

Abstract: Disclosed is a manufacture method of the array substrate, including: sequentially forming a gate, a gate insulating layer, an active layer, an ohmic contact layer and a metal layer on a substrate, forming a photoetching mask on the metal layer, where thickness of the photoetching mask in a half exposure area of the mask plate is from 2000 ? to 6000 ?; etching the metal layer, the ohmic contact layer and the active layer outside a covering area of the photoetching mask; ashing the photoetching mask for a preset time with an ashing reactant, wherein the ashing reactant comprises oxygen, and the preset time is from 70 seconds to 100 seconds; and sequentially etching the metal layer, the ohmic contact layer and the active layer based on the ashed photoetching mask, and forming a channel region of the array substrate. The present disclosure further discloses an array substrate, and a display panel.

Abstract: The present application discloses a display panel and a method for manufacturing a first substrate thereof. The display panel includes a first substrate which is provided with a thin film transistor. The thin film transistor includes a gate, a source and a drain. Light shielding layers are disposed on the outer side of the source and the outer side of the drain.

Abstract: This application provides a method for manufacturing an array substrate, an array substrate, and a display panel. A gate metal layer, a gate insulating layer, and a semiconductor active layer are formed by using one photomask process, a first passivation layer is formed in one photomask process, and a source metal layer, a drain metal layer, and a pixel electrode layer are formed on the first passivation layer.

Abstract: The present disclosure provides a photosensitive device, including: a photosensitive layer (1) formed by stacking a plurality of fillers, each of the fillers being a uniformly distributed nanopore structure, the nanopore structure being filled with gaseous selenium; a first electrode (2) provided on a light incident side of the photosensitive layer (1); and a second electrode (3) provided on a light exit side of the photosensitive layer (1). The present disclosure further provides an X-ray detector and a display device.

Abstract: The present application relates to a light-emitting device, comprising an anode, a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and a cathode, which are stacked in sequence, wherein the light-emitting layer comprises N stacked light-emitting units; each light-emitting unit comprises a thermal activation delayed fluorescent material layer and a quantum dot material layer; the light emitted from the thermal activation delayed fluorescent material layer and the light emitted from the quantum dot material layer are synthesized into white light.

Abstract: Provided are a thin film transistor structure, a manufacturing method thereof, and a display device. The method comprises: providing a substrate (10), and sequentially forming a gate (20), a gate insulating layer (30), an active layer (40), a doped layer (50), a source (610), a drain (620) and a channel region (70) on the substrate (10); placing the channel region (70) in a preset gas atmosphere for heating treatment; wherein, the channel region (70) is placed in a nitrogen atmosphere to heat for a first preset time, in a mixed atmosphere of nitrogen and ammonia to heat for a second preset time, in an ammonia atmosphere to heat for a third preset time; or first heating the channel region (70) for a fourth preset time, finally placing in the ammonia atmosphere to heat for a fifth preset time.

Abstract: This application discloses a display panel, a method for manufacturing a display panel, and a display device. The display panel includes an organic electroluminescent device. The organic electroluminescent device includes an emission layer. The emission layer includes a main body made of mesoporous silica and a dopant made of an organic small molecule luminescent material. The dopant is arranged in the main body.