Patents by Inventor Erdem Arkun

Erdem Arkun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210103081
    Abstract: A single crystal multilayer low-loss optical component comprising first and second layers made from dissimilar materials, with the materials comprising the first layer lattice-matched to the materials comprising the second layer. The first and second layers are grown epitaxially in pairs on a growth substrate to which the materials of the first layer are also lattice-matched, such that a single crystal multilayer optical component is formed. The optical component may further comprise a second substrate to which the layer pairs are wafer bonded after being removed from the growth substrate.
    Type: Application
    Filed: October 4, 2019
    Publication date: April 8, 2021
    Inventors: Bertrand Bovard, Erdem Arkun
  • Patent number: 9917193
    Abstract: A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: March 13, 2018
    Assignee: TRANSLUCENT, INC.
    Inventors: Rytis Dargis, Andrew Clark, Nam Pham, Erdem Arkun
  • Patent number: 9824886
    Abstract: A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.
    Type: Grant
    Filed: October 27, 2014
    Date of Patent: November 21, 2017
    Assignee: TRANSLUCENT, INC.
    Inventors: Rytis Dargis, Andrew Clark, Erdem Arkun
  • Publication number: 20170054025
    Abstract: A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
    Type: Application
    Filed: August 30, 2016
    Publication date: February 23, 2017
    Inventors: Rytis Dargis, Andrew Clark, Nam Pham, Erdem Arkun
  • Patent number: 9496132
    Abstract: A method of fabricating a layer of single crystal III-N material on a silicon substrate includes epitaxially growing a REO template on a silicon substrate. The template includes a REO layer adjacent the substrate with a crystal lattice spacing substantially matching the crystal lattice spacing of the substrate and selected to protect the substrate from nitridation. Either a rare earth oxynitride or a rare earth nitride is formed adjacent the upper surface of the template and a layer of single crystal III-N material is epitaxially grown thereon.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: November 15, 2016
    Assignee: Translucent, Inc.
    Inventors: Erdem Arkun, Andrew Clark, Rytis Dargis, Radek Roucka, Michael Lebby
  • Patent number: 9460917
    Abstract: A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
    Type: Grant
    Filed: February 12, 2014
    Date of Patent: October 4, 2016
    Assignee: Translucent, Inc.
    Inventors: Rytis Dargis, Andrew Clark, Nam Pham, Erdem Arkun
  • Patent number: 9443939
    Abstract: A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
    Type: Grant
    Filed: October 27, 2015
    Date of Patent: September 13, 2016
    Assignee: Translucent, Inc.
    Inventors: Rytis Dargis, Erdem Arkun, Radek Roucka, Andrew Clark, Michael Lebby
  • Patent number: 9431526
    Abstract: A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.
    Type: Grant
    Filed: September 16, 2014
    Date of Patent: August 30, 2016
    Assignee: TRANSLUCENT, INC.
    Inventors: Rytis Dargis, Andrew Clark, Erdem Arkun
  • Publication number: 20160240375
    Abstract: A method of forming a REO dielectric layer and a layer of a-Si between a III-N layer and a silicon substrate. The method includes depositing single crystal REO on the substrate. The single crystal REO has a lattice constant adjacent the substrate matching the lattice constant of the substrate and a lattice constant matching a selected III-N material adjacent an upper surface. A uniform layer of a-Si is formed on the REO. A second layer of REO is deposited on the layer of a-Si with the temperature required for epitaxial growth crystallizing the layer of a-Si and the crystallized silicon being transformed to amorphous silicon after transferring the lattice constant of the selected III-N material of the first layer of REO to the second layer of REO, and a single crystal layer of the selected III-N material deposited on the second layer of REO.
    Type: Application
    Filed: October 27, 2014
    Publication date: August 18, 2016
    Inventors: Rytis Dargis, Andrew Clark, Erdem Arkun
  • Publication number: 20160181093
    Abstract: A method of growing III-N material on a silicon substrate including the steps of epitaxially growing a buffer layer of REO material on a silicon substrate, epitaxially growing a layer of REN material on the surface of the buffer, and epitaxially growing a thin protective layer of REO on the surface of the REN material layer. The substrate and structure can then be conveniently transferred to another growth machine in which are performed the steps of transforming or modifying in-situ the REO protective layer to a REN layer with a nitrogen treatment and epitaxially growing a layer of III-N material on the modified protective layer.
    Type: Application
    Filed: December 19, 2014
    Publication date: June 23, 2016
    Inventors: Rytis Dargis, Andrew Clark, Erdem Arkun, Nam Pham
  • Publication number: 20160133708
    Abstract: A method of fabricating a rare earth oxide buffered III-N on silicon wafer including providing a crystalline silicon substrate, depositing a rare earth oxide structure on the silicon substrate including one or more layers of single crystal rare earth oxide, and depositing a layer of single crystal III-N material on the rare earth oxide structure so as to form an interface between the rare earth oxide structure and the layer of single crystal III-N material. The layer of single crystal III-N material produces a tensile stress at the interface and the rare earth oxide structure has a compressive stress at the interface dependent upon a thickness of the rare earth oxide structure. The rare earth oxide structure is grown with a thickness sufficient to provide a compressive stress offsetting at least a portion of the tensile stress at the interface to substantially reduce bowing in the wafer.
    Type: Application
    Filed: October 27, 2015
    Publication date: May 12, 2016
    Inventors: Rytis Dargis, Erdem Arkun, Radek Roucka, Andrew Clark, Michael Lebby
  • Patent number: 9236249
    Abstract: A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.
    Type: Grant
    Filed: July 11, 2013
    Date of Patent: January 12, 2016
    Assignee: TRANSLUCENT, INC.
    Inventors: Rytis Dargis, Robin Smith, Andrew Clark, Erdem Arkun, Michael Lebby
  • Patent number: 9142406
    Abstract: III-N material grown on a buffer on a substrate that includes one of a single crystal silicon or a single crystal sapphire. A buffer of single crystal alloy, including one of ErxAl1-xN or (RE1yRE21-y)xAl1-xN, is positioned on the substrate. A layer of single crystal III-N material is positioned on the surface of the buffer and the single crystal alloy has a lattice constant substantially crystal lattice matched to the layer of single crystal III-N material. When the III-N material is GaN, the x in the formula for the alloy varies from less than 1 adjacent the substrate to greater than or equal to 0.249 adjacent the layer of single crystal GaN.
    Type: Grant
    Filed: May 2, 2014
    Date of Patent: September 22, 2015
    Assignee: Translucent, Inc.
    Inventors: Rytis Dargis, Andrew Clark, Nam Pham, Erdem Arkun
  • Publication number: 20150228484
    Abstract: A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
    Type: Application
    Filed: February 12, 2014
    Publication date: August 13, 2015
    Inventors: Rytis Dargis, Andrew Clark, Nam Pham, Erdem Arkun
  • Patent number: 9105471
    Abstract: Rare earth oxy-nitride buffered III-N on silicon includes a silicon substrate with a rare earth oxide (REO) structure, including several REO layers, is deposited on the silicon substrate. A layer of single crystal rare earth oxy-nitride is deposited on the REO structure. The REO structure is stress engineered to approximately crystal lattice match the layer of rare earth oxy-nitride so as to provide a predetermined amount of stress in the layer of rare earth oxy-nitride. A III oxy-nitride structure, including several layers of single crystal rare earth oxy-nitride, is deposited on the layer of rare earth oxy-nitride. A layer of single crystal III-N nitride is deposited on the III oxy-nitride structure. The III oxy-nitride structure is chemically engineered to approximately crystal lattice match the layer of III-N nitride and to transfer the predetermined amount of stress in the layer of rare earth oxy-nitride to the layer of III-N nitride.
    Type: Grant
    Filed: August 3, 2011
    Date of Patent: August 11, 2015
    Assignee: TRANSLUCENT, INC.
    Inventors: Andrew Clark, Erdem Arkun, Robin Smith, Michael Lebby
  • Patent number: 8994032
    Abstract: III-N material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth aluminum nitride substantially crystal lattice matched to the surface of the silicon substrate, i.e. a lattice co-incidence between REAlN and Si better than a 5:4 ratio. A layer of single crystal III-N material is positioned on the surface of the buffer and substantially crystal lattice matched to the surface of the buffer.
    Type: Grant
    Filed: March 4, 2013
    Date of Patent: March 31, 2015
    Assignee: Translucent, Inc.
    Inventors: Erdem Arkun, Andrew Clark, Rytis Dargis
  • Publication number: 20150069409
    Abstract: A heterostructure grown on a silicon substrate includes a single crystal rare earth oxide template positioned on a silicon substrate, the template being substantially crystal lattice matched to the surface of the silicon substrate. A heterostructure is positioned on the template and defines at least one heterojunction at an interface between a III-N layer and a III-III-N layer. The template and the heterostructure are crystal matched to induce an engineered predetermined tensile strain at the at least one heterojunction. A single crystal rare earth oxide dielectric layer is grown on the heterostructure so as to induce an engineered predetermined compressive stress in the single crystal rare earth oxide dielectric layer and a tensile strain in the III-III-N layer. The tensile strain in the III-III-N layer and the compressive stress in the REO layer combining to induce a piezoelectric field leading to higher carrier concentration in 2DEG at the heterojunction.
    Type: Application
    Filed: September 16, 2014
    Publication date: March 12, 2015
    Inventors: Rytis Dargis, Andrew Clark, Erdem Arkun
  • Publication number: 20150014676
    Abstract: A method of growing III-N material on a silicon substrate includes the steps of epitaxially growing a single crystal rare earth oxide on a silicon substrate, epitaxially growing a single crystal rare earth nitride on the single crystal rare earth oxide, and epitaxially growing a layer of single crystal III-N material on the single crystal rare earth nitride.
    Type: Application
    Filed: July 11, 2013
    Publication date: January 15, 2015
    Inventors: Rytis Dargis, Robin Smith, Andrew CLark, Erdem Arkun, Michael Lebby
  • Patent number: 8878188
    Abstract: A rare earth oxide gate dielectric on III-N material grown on a silicon substrate includes a single crystal stress compensating template positioned on a silicon substrate. The stress compensating template is substantially crystal lattice matched to the surface of the silicon substrate. A GaN structure is positioned on the surface of the stress compensating template and substantially crystal lattice matched thereto. An active layer of single crystal III-N material is grown on the GaN structure and substantially crystal lattice matched thereto. A single crystal rare earth oxide dielectric layer is grown on the active layer of III-N material.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: November 4, 2014
    Assignee: Translucent, Inc.
    Inventors: Rytis Dargis, Robin Smith, Andrew Clark, Erdem Arkun, Michael Lebby
  • Patent number: 8872308
    Abstract: III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.
    Type: Grant
    Filed: February 20, 2013
    Date of Patent: October 28, 2014
    Assignee: Translucent, Inc.
    Inventors: Erdem Arkun, Michael Lebby, Andrew Clark, Rytis Dargis