Abstract: One inventive aspect is related to a method of bonding two elements and micro-electronic devices produced according to such methods. In one aspect, a micro-electronic device includes a first and a second element, bonded together by a joining structure. The joining structure has a first micropattern portion, a second micropattern portion, and a joining portion in between the first and second micropattern portions. The first and second micropattern portions are made of cobalt. The joining portion includes intermetallic compounds of cobalt and tin (Sn).

Abstract: An interconnect module and a method of manufacturing the same. The method of making an interconnect module on a substrate comprises forming an interconnect section on the substrate. The interconnect section comprises at least two metal interconnect layers separated by a dielectric layer. The method further comprises forming a passive device on the substrate at a location laterally adjacent to the interconnect section. The passive device comprises at least one moveable element comprising a metal layer. The method further comprises forming the metal layer and one of the at least two metal interconnect layers from substantially the same material.

Abstract: A method is disclosed for bonding two elements by means of a bonding agent such as a glue layer, wherein the bonding agent is removable, and wherein between the bonding agent and at least one element, a sacrificial layer is applied which is selectively removable with respect to that element. According to embodiments, the elements comprise a die or a substrate bonded to a carrier wafer. The nature and type of the die or substrate and of the carrier can vary within the scope of embodiments of the invention. Also disclosed is a composite substrate obtainable by methods of the invention.

Abstract: In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures (20) comprising shafts (2) with different functionality and dimensions can be inserted in a modular way. That way, out-of-plane connectivity, mechanical clamping between the microstructures (20) and a substrate (1) of the device, and electrical connection between electrodes (5) on the microstructures (20) and the substrate (1) can be realized. Connections to external circuitry can be realised. Microfluidic channels (10) in the microstructures (20) can be connected to external equipment. A method to fabricate and assemble the device is provided.

Abstract: A device and a method for bonding elements are described. A first solder ball is produced on a main surface of a first element. A second solder ball is produced on a main surface of a second element. Contact is provided between the first solder ball and the second solder ball. The first and second elements are bonded by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a first layer of non-conductive material and the second solder ball is laterally embedded in a second layer of non-conductive material, such that the upper part of the first solder ball and upper part of the second solder ball are not covered by the non-conductive material. A third solder volume is applied on one or both of the embedded first or second solder balls, prior to the bonding.

Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.

Abstract: In the present disclosure a device for sensing and/or actuation purposes is presented in which microstructures (20) comprising shafts (2) with different functionality and dimensions can be inserted in a modular way. That way, out-of-plane connectivity, mechanical clamping between the microstructures (20) and a substrate (1) of the device, and electrical connection between electrodes (5) on the microstructures (20) and the substrate (1) can be realized. Connections to external circuitry can be realised. Microfluidic channels (10) in the microstructures (20) can be connected to external equipment. A method to fabricate and assemble the device is provided.

Abstract: One inventive aspect is related to a method of bonding two elements and micro-electronic devices produced according to such methods. In one aspect, a micro-electronic device includes a first and a second element, bonded together by a joining structure. The joining structure has a first micropattern portion, a second micropattern portion, and a joining portion in between the first and second micropattern portions. The first and second micropattern portions are made of cobalt. The joining portion includes intermetallic compounds of cobalt and tin (Sn).

Abstract: The present invention is related to a method for singulating chips from a stack of layers, such as the layers on a wafer or substrate. The stack of layers includes a front end of line (FEOL) layer upon the substrate layer, with the substrate layer having a first surface and a second surface. The FEOL is positioned on top of the first surface, and a back end of line (BEOL) layer is positioned on top of the FEOL. The method includes etching singulating trenches through the BEOL, through the FEOL and at least partially through the substrate layer, depositing a passivation layer on the stack provided with singulating trenches, whereby the sidewalls of the etched singulating trenches are at least partially passivated. Dicing, such as blade dicing, laser dicing or trench etch dicing is performed, releasing the chip from the stack of layers.

Abstract: One inventive aspect is related to a method of bonding two elements. The method comprises producing on a first element a first micropattern, comprising a first metal layer. The method further comprises producing on a second element a second micropattern, comprising a second metal layer. The method further comprises applying onto the first micropattern and/or on the second micropattern a layer of solder material. The method further comprises producing on at least one of the elements a patterned non-conductive adhesive layer around the micropattern on the element. The method further comprises joining the first micropattern and the second micropattern by means of a thermocompression or reflow method, wherein the producing of an adhesive layer is performed before the joining such that the first and second elements are secured to each other by the adhesive layer(s) after joining.

Abstract: A device and a method for bonding elements are described. A first solder ball is produced on a main surface of a first element. A second solder ball is produced on a main surface of a second element. Contact is provided between the first solder ball and the second solder ball. The first and second elements are bonded by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a first layer of non-conductive material and the second solder ball is laterally embedded in a second layer of non-conductive material, such that the upper part of the first solder ball and upper part of the second solder ball are not covered by the non-conductive material. A third solder volume is applied on one or both of the embedded first or second solder balls, prior to the bonding.

Abstract: A method is disclosed for bonding two elements by means of a bonding agent such as a glue layer, wherein the bonding agent is removable, and wherein between the bonding agent and at least one element, a sacrificial layer is applied which is selectively removable with respect to that element. According to embodiments, the elements comprise a die or a substrate bonded to a carrier wafer. The nature and type of the die or substrate and of the carrier can vary within the scope of embodiments of the invention. Also disclosed is a composite substrate obtainable by methods of the invention.

Abstract: An interconnect module and a method of manufacturing the same. The method of making an interconnect module on a substrate comprises forming an interconnect section on the substrate. The interconnect section comprises at least two metal interconnect layers separated by a dielectric layer. The method further comprises forming a passive device on the substrate at a location laterally adjacent to the interconnect section. The passive device comprises at least one moveable element comprising a metal layer. The method further comprises forming the metal layer and one of the at least two metal interconnect layers from substantially the same material.

Abstract: A device and a method for bonding elements are described. A first solder ball is produced on a main surface of a first element. A second solder ball is produced on a main surface of a second element. Contact is provided between the first solder ball and the second solder ball. The first and second elements are bonded by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a first layer of non-conductive material and the second solder ball is laterally embedded in a second layer of non-conductive material, such that the upper part of the first solder ball and upper part of the second solder ball are not covered by the non-conductive material. A third solder volume is applied on one or both of the embedded first or second solder balls, prior to the bonding.

Abstract: An interconnect module and a method of manufacturing the same. The method of making an interconnect module on a substrate comprises forming an interconnect section on the substrate. The interconnect section comprises at least two metal interconnect layers separated by a dielectric layer. The method further comprises forming a passive device on the substrate at a location laterally adjacent to the interconnect section. The passive device comprises at least one moveable element comprising a metal layer. The method further comprises forming the metal layer and one of the at least two metal interconnect layers from substantially the same material.

Abstract: A packaged microelectronic device (20) is provided comprising at least one electrode (10) comprising a chip (18) embedded in a package. The chip (18) comprises a back electrode (17) located at a first side of the chip (18), and electronic circuitry (14) located at a second side of the chip (18), the second side being opposite to the first side, and wherein the back electrode (17) is part of the package. A method for forming such packaged microelectronic devices (20) is also described.

Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.

Abstract: A method of bonding two elements such as wafers used in microelectronics applications is disclosed. One inventive aspect relates to a method for bonding comprising producing on a first main surface of a first element a first solder ball, producing on a first main surface of a second element a second solder ball, providing contact between the first solder ball and the second solder ball, bonding the first element and the second element by applying a reflow act whereby the solder balls melt and form a joined solder ball structure. Prior to the bonding, the first solder ball is laterally embedded in a nonconductive material, such that the upper part of the first solder ball is not covered by the non-conductive material. Devices related to such methods are also disclosed.

Abstract: Methods for protecting metal surfaces against oxidation are provided. The methods can comprise a plasma treatment, a sintering treatment or a combination of the plasma and sintering treatment. Also provided is a method for bonding a wire on a metal bond pad using the methods for protecting a metal surface.

Abstract: To provide a semiconductor device configured that a micro device having a device substrate, a function element provided on the device substrate and having an oscillator or a movable part, first lands provided on a surface of the device substrate by being arranged on its outer circumference portion of the function element, and bumps provided to the first lands is mounted on the circuit board having second lands formed to correspond to the bumps, from the bump formation surface side, so that the bumps and the second lands are electrically connected; on which a sealing resin layer is formed to go round the outer circumference portion of the function element to fix connection portions of the bumps and the second lands, and to seal a clearance between the device substrate and the circuit board; and a cavity portion is formed between the function element and the circuit board.