Abstract: Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.

Abstract: Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

Abstract: Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.

Abstract: Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Abstract: A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Abstract: Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

Abstract: In a method for removing an organic adhesive from a glass carrier in a semiconductor manufacturing process, the glass carrier is placed into a process chamber. The glass carrier is rotated and heated sulfuric acid is applied or sprayed onto the glass carrier. Ozone is introduced into the process chamber. The ozone diffuses through the sulfuric acid to the organic adhesive on the surface of the glass carrier. The sulfuric acid and the ozone chemically react with the organic adhesive and remove it from the glass carrier.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Abstract: Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

Abstract: Methods and apparatus for processing a substrate area provided herein. For example, methods for enhancing surface hydrophilicity on a substrate comprise a) supplying, using a remote plasma source, water vapor plasma to a processing volume of a plasma processing chamber to treat a bonding surface of the substrate, b) supplying at least one of microwave power or RF power at a frequency from about 1 kHz to 10 GHz and a power from about 1 kW to 10 kW to the plasma processing chamber to maintain the water vapor plasma within the processing volume during operation, and c) continuing a) and b) until the bonding surface of the substrate has a hydrophilic contact angle of less than 10°.

Abstract: Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

Abstract: Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Abstract: Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.

Abstract: Exemplary methods of electroplating may include providing a patterned substrate having at least one opening, where the opening includes one or more sidewalls and a bottom surface. The methods may also include plating a first portion of ruthenium-containing material on the bottom surface of the opening at a first deposition rate and a second portion of ruthenium-containing material on the sidewalls of the opening at a second deposition rate, where the first deposition rate is greater than the second deposition rate. The methods may be used to make integrated circuit devices that include void-free, electrically-conductive lines and columns of ruthenium-containing materials.

Abstract: An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Abstract: Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

Abstract: Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

Abstract: Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.