Abstract: In electroplating apparatus, a paddle or agitator agitates electrolyte in a vessel to provide high velocity fluid flow at the surface of a wafer. The agitator is designed and/or moved to also selectively shield part of the wafer, for example the edge of the wafer, from the electric field in the vessel. Selectively shielding may be achieved by temporally shifting the average position of the agitator towards one side of the wafer, by omitting or shortening slots in the agitator, and/or by synchronizing movement of the agitator with rotation of the wafer.

Abstract: In systems and methods for removing a photoresist film off of a wafer, the wafer is moved into a bath of a process liquid in a process tank. The process liquid removes the photoresist film from the wafer. The process liquid is pumped from the process tank to a filter assembly and moved through filter media to filter out solids from the process liquid, and the filtered process liquid is returned to the process tank. A scraper scrapes the filter media to prevent clogging of the filter media by accumulated solids.

Abstract: Methods of etching a semiconductor substrate may include applying an etchant to the semiconductor substrate. The semiconductor substrate may include an exposed region of an oxygen-containing material and an exposed region of a nitrogen-containing material. The methods may include heating the semiconductor substrate from a first temperature to a second temperature. The methods may include maintaining the semiconductor substrate at the second temperature for a period of time sufficient to perform an etch of the nitrogen-containing material relative to the oxygen-containing material. The methods may also include quenching the etch subsequent the period of time.

Abstract: A polymer layer on a substrate may be treated with ozone gas or with deionized water and ozone gas to increase a removal rate of the polymer layer in a chemical mechanical polishing (CMP) process. The ozone gas may be diffused directly into the polymer layer or through a thin layer of deionized water on the surface of the polymer layer and into the polymer layer. The deionized water may also be heated during the process to further enhance the diffusion of the ozone gas into the polymer layer.

Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

Abstract: Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

Abstract: In systems and methods for removing a photoresist film off of a wafer, the wafer is moved into a bath of a process liquid in a process tank. The process liquid removes the photoresist film from the wafer. The process liquid is pumped from the process tank to a filter assembly and moved through filter media to filter out solids from the process liquid, and the filtered process liquid is returned to the process tank. A scraper scrapes the filter media to prevent clogging of the filter media by accumulated solids.

Abstract: In one embodiment, an electroplating cell for depositing a metal onto a surface of a substrate includes an electroplating chamber configured to receive an electrolyte containing metal ions and a substrate having a surface disposed to contact the electrolyte, wherein the surface of the substrate is configured to serve as a cathode and wherein the surface of the substrate includes an anomaly region at or near the outer perimeter of the surface of the substrate, an anode disposed in the electrolyte chamber, a shielding device disposed between the cathode and the anode to shield the anomaly section, an oscillator configured to impart a relative oscillation between the cathode and the shielding device, and a power source to cause an electric field between the anode and the cathode.

Abstract: In electroplating apparatus, a paddle or agitator agitates electrolyte in a vessel to provide high velocity fluid flow at the surface of a wafer. The agitator is designed and/or moved to also selectively shield part of the wafer, for example the edge of the wafer, from the electric field in the vessel. Selectively shielding may be achieved by temporally shifting the average position of the agitator towards one side of the wafer, by omitting or shortening slots in the agitator, and/or by synchronizing movement of the agitator with rotation of the wafer.

Abstract: A method for electrochemically processing a microfeature workpiece includes contacting the first surface of the microfeature workpiece with a plating electrolyte in a plating chamber, wherein the plating electrolyte includes at least one metal ion, flowing the plating electrolyte from a first plating electrolyte inlet at the first end of the workpiece to a second plating electrolyte outlet at the second end of the workpiece across the center point of the workpiece, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece. Another method for electrochemically processing a microfeature workpiece includes contacting a first surface of the microfeature workpiece with a plating electrolyte having at least one metal ion, heating the second surface of the workpiece using a heating method, and electrochemically depositing the at least one metal ion onto the first surface of the workpiece.

Abstract: Methods and etchant solutions for etching silicon nitride on a workpiece are provided. One method generally includes exposing the workpiece to a chemistry mixture including phosphoric acid and a diluent, wherein the chemistry mixture has a water content of less than 10% by volume, and heating at least one of the workpiece and the chemistry mixture to a process temperature to etch silicon nitride from the workpiece.

Abstract: A semiconductor wafer processing system has a carrier including wafer slots. A process robot engages the carrier and installs the carrier into a rotor within a process chamber. The rotor has a tapered or stepped inside surface matching a tapered or stepped outside surface of the carrier. Wafer retainers on the carrier pivot to better secure wafers within the carrier.

Abstract: A processing chamber successfully removes hardened photoresist via direct infrared radiation onto the wafer, in the presence of an acid such as sulfuric acid, optionally along with an oxidizer such as hydrogen peroxide. The processing chamber includes a fixture for holding and optionally rotating the wafer. An infrared irradiating assembly has infrared lamps outside of the processing chamber positioned to radiate infrared light into the processing chamber. The infrared lamps may be arranged to irradiate substantially the entire surface of a wafer on the rotor. A cooling assembly can be associated with the infrared radiating assembly to provide a quick cool down and avoid over-processing. Photoresist is removed using small amounts of chemical solutions.

Abstract: In a method and apparatus for cleaning or processing a workpiece, a process gas is brought into contact with the workpiece by diffusion through a heated liquid layer on the workpiece, and by bulk transport achieved by entraining the gas in a liquid stream, spray or jet impinging on the workpiece. The process gas, which may be ozone, is entrained in the liquid via entrainment nozzles. Use of entrainment and diffusion together increases the amount of gas available for reaction at the workpiece surface, increases the reaction rate, and decreases required process times.

Abstract: A method of thinning a silicon wafer in a controllable cost-effective manner with minimal chemical consumption. The wafer is placed into a process chamber, after which ozone gas and HF vapor are delivered into the process chamber to react with a silicon surface of the wafer. The ozone and HF vapor may be delivered sequentially, or may be mixed with one another before entering the process chamber. The ozone oxidizes the silicon surface of the wafer, while the HF vapor etches the oxidized silicon away from the wafer. The etched oxidized silicon is then removed from the process chamber. As a result, the wafer is thinned, which aids in preventing heat build-up in the wafer, and also makes the wafer easier to handle and cheaper to package. In alternative embodiments, HF may be delivered into the process chamber as an anhydrous gas or in aqueous form.

Abstract: In methods for smoothing or polishing a surface of a wafer, such as a silicon wafer, a liquid layer is formed on a surface of the wafer. The liquid layer may be an invisible microscopic layer, or a visible macroscopic layer. A flow of an oxidizing gas is directed over, against or onto the liquid layer of the surface of the wafer, in the presence of an etchant. The flow of gas thins the liquid layer at high points or areas on the surface of the wafer more than at low points or areas on the wafer surface. Consequently, the high points are oxidized and etched away more than the low points. As a result, the wafer surface is smoothed and polished.

Abstract: An etch release for a MEMS device on a substrate includes etching the substrate with an etchant vapor and a wetting vapor. A thermal bake of the MEMS device, after the etch release may be used to volatilize residues. A supercritical fluid may also be used to remove residual contaminants. The combination of the etchant vapor, such as HF, and the wetting vapor, such as an alcohol vapor, improves the uniformity of the etch undercut on the substrate.

Abstract: A method for cleaning a semiconductor workpiece having a metal layer in a processing chamber includes the steps of introducing a liquid solution including dissolved carbon dioxide onto the workpiece, and introducing ozone into the processing chamber. The ozone oxidizes contaminants on the workpiece, while the carbon dioxide inhibits corrosion of the metal layer. The liquid solution is preferably heated to a temperature greater than 40° C., and preferably comprises deionized water injected with carbon dioxide gas. The workpiece is preferably rotated within the processing chamber during the cleaning process. The ozone may be entrained in the liquid solution before the liquid solution is introduced onto the workpiece, or the ozone may be introduced separately into the processing chamber.

Abstract: Contaminants such as photoresist are quickly removed from a wafer having metal features, using water, ozone and a base such as ammonium hydroxide. Processing is performed at room temperature to avoid metal corrosion. Ozone is delivered into a stream of process liquid or into the process environment or chamber. Steam may alternatively be used. A layer of liquid or vapor forms on the wafer surface. The ozone moves through the liquid layer via diffusion, entrainment, jetting/spraying or bulk transfer, and chemically reacts with the photoresist, to remove it.

Abstract: A novel chemistry, system and application technique reduces contamination of semiconductor wafers and similar substrates and enhances and expedites processing. A stream of liquid chemical is applied to the workpiece surface. Ozone is delivered either into the liquid process stream or into the process environment. The ozone is preferably generated by a high capacity ozone generator. The chemical stream is provided in the form of a liquid or vapor. A boundary layer liquid or vapor forms on the workpiece surface. The thickness of the boundary layer is controlled. The chemical stream may include ammonium hydroxide for simultaneous particle and organic removal, another chemical to raise the pH of the solution, or other chemical additives designed to accomplish one or more specific cleaning steps.