Abstract: A laser-based rangefinding instrument for, inter alia, golfing or hunting activities having an unique ergonomic design and an external multi-function switch for controlling display brightness, selectable display of differing distance units and a slope selection switch for enabling display of line of sight distance or angle of slope and “Compensated Golf Distance” slope distance to a target.

Abstract: A semiconductor structure includes a plurality of gate-all-around field effect transistors. Each of the gate-all-around field effect transistors includes first and second source-drain regions; at least one channel region interconnecting the first and second source-drain regions; and a gate structure surrounding the at least one channel region. A direct backside contact is located below one of the first and second source-drain regions. The direct backside contact has an upper portion. A dielectric liner is wrapped around the upper portion of the direct backside contact.

Abstract: A precise bearing measurement device wirelessly couplable to an associated rangefinder for providing the rangefinder with the horizontal bearing of the device. The device comprises a rotor board and parallel and spaced apart resolver board to which it is capacitively coupled. A processor and an inclinometer are provided to ensure the device is maintained in a level orientation when taking a bearing measurement.

Abstract: Systems and methods are provided reducing storage space occupied by a media asset by adjusting quality levels of the media asset downward over time. This may be accomplished by a media guidance application that store, at a given time, the media asset in a first format having a first quality level. The media guidance application retrieves, from a database, a data entry corresponding to the media asset and determines, based on the data entry, a threshold period of time for storing the media asset in the first format. The media guidance application detects whether the threshold period of time since the given time has passed and responds by altering a first portion of the media asset from the first format having the first quality level to a second format having a second quality level that is inferior to the first quality level.

Abstract: CXCR4 antagonists and pharmaceutical formulations thereof are disclosed. The compounds and pharmaceutical formulations disclosed herein can be used to antagonize the CXCR4 pathway for mobilizing stem cells or treating a condition, disorder, or disease associated with the CXCR4 pathway. Exemplary conditions, disorders, and diseases relevant to this disclosure include HIV infections, WHIM syndrome, Waldenström macroglobulinemia, chronic neutropenia, primary immune-deficiency, aplastic anemia, hypoplastic myelodysplastic syndrome, acute respiratory distress syndrome (ARDS), ankylosing spondylitis, autoimmune diseases, and cancers.

Abstract: Disclosed are acyclic nucleoside prodrugs with improved metabolic stability and oral bioavailability. In general, the prodrugs are derivatives of acyclic nucleoside phosphonates containing a lipid-like moiety that can increase oral absorption and subsequent stability in the liver and plasma. Preferably, the lipid-like moiety can resist enzyme-mediated ?-oxidation, such as ?-oxidation catalyzed by cytochrome P450 enzymes. Also disclosed are pharmaceutical formulations of the acyclic nucleoside prodrugs. The acyclic nucleoside prodrugs and pharmaceutical formulations thereof can be used to treat viral infections, such as HIV infections, and/or viral-associated cancer, such as HPV-associated cancers.

Abstract: A laser-based rangefinding instrument for, inter alia, golfing or hunting activities having an unique ergonomic design and an external multi-function switch for controlling display brightness, selectable display of differing distance units and a slope selection switch for enabling display of line of sight distance or angle of slope and “Compensated Golf Distance” slope distance to a target.

Abstract: Embodiments disclosed herein include a semiconductor structure for reducing contact to contact shorting. The semiconductor structure may include a gate cut region with a liner and a dielectric core confined within a first lateral side of the liner and a second lateral side of the liner. The semiconductor structure may also include a first source/drain (S/D) contact overlapping the first lateral side and the dielectric core. The first S/D may include a line-end that contacts the second lateral side of the liner.

Abstract: The disclosure relates to chemokine CXCR4 receptor modulators and uses related thereto. The receptor modulators can be formulated to form pharmaceutical compositions comprising the disclosed compounds or pharmaceutically acceptable salts or prodrugs thereof. The compositions may be used for managing CXCR4 related conditions, typically prevention or treatment of viral infections abnormal cellular proliferation, retinal degeneration, inflammatory diseases, or as an immunostimulant or immunosuppressant or for managing cancer and may be administered with another active ingredient such as an antiviral agent or chemotherapeutic agent.

Abstract: A microelectronic device including a first nanosheet transistors adjacent to a second nanosheet transistor. The first nanosheet transistor includes a plurality of first nanosheets, and the second nanosheet transistor includes a plurality of second nanosheets. A source/drain located between the first nanosheet transistor and second nanosheet transistor. A first gate wraps around the plurality of first nanosheets. A second gate wraps around the plurality of second nanosheets. A first upper spacer located adjacent to the first gate, where the first upper spacer is in contact with at least three sides of the first gate. A second upper spacer located adjacent to the second gate, where the second upper spacer is in contact with at least three sides of the second gate. A backside interconnect connected to the source/drain, where the backside interconnect is in contact with the first upper spacer and the second upper spacer.

Abstract: A method of forming a semiconductor structure includes forming a nanosheet stack including alternating layers of a sacrificial material and a channel material over a substrate, the layers of channel material providing nanosheet channels for one or more nanosheet field-effect transistors. The method also includes forming a hard mask stack over the nanosheet stack, and forming a patterning layer over the hard mask stack. The method further includes patterning a lithographic mask over the patterning layer, the lithographic mask defining (i) one or more first regions for direct printing of one or more fins of a first width in the nanosheet stack and the substrate and (ii) one or more second regions for setting the spacing between two or more fins of a second width in the nanosheet stack and the substrate using self-aligned double patterning. The second width is less than the first width.

Abstract: A semiconductor structure includes a substrate and a gate-all-around field effect transistor disposed over the substrate. The gate-all-around field effect transistor includes a first source-drain region; a second source-drain region; at least one channel region interconnecting the first and second source drain regions; and a gate structure surrounding the at least one channel region. A self-aligned substrate isolation (SASI) layer is located between the substrate and the gate structure and extends over a width of the gate structure.

Abstract: A device for passing cerclage wire includes a first member having a first region and a second region, where the first member includes a cannula formed therein. The first region is substantially linear in shape and the second region is hooked. The first region includes at least one aperture that is fluidly connected to the cannula, wherein the at least one aperture is configured to receive cerclage wire. Kits including the device and methods employing the device are also disclosed.

Abstract: A device actuation system for actuating a treatment device includes a first drive gear rotatably mountable to the treatment device, a coupler rail slidably mountable to the treatment device, a second drive gear rotatably mountable to the coupler rail, and a coupler gear rotatably mountable to the treatment device and engageable with the coupler rail. In addition, the device actuation system includes a drive rail locatable between the first drive gear and the second drive gear of the gear system. The coupler gear is rotatable to move the coupler rail in a manner maintaining the second drive gear in continuous engagement with the drive rail against the first drive gear. The first drive gear and the second drive gear are rotatable in a manner causing at least one of translation and rotation of the treatment device relative to the drive rail.

Abstract: Disclosed are acyclic nucleoside prodrugs with improved metabolic stability and oral bioavailability. In general, the prodrugs are derivatives of acyclic nucleoside phosphonates containing a lipid-like moiety that can increase oral absorption and subsequent stability in the liver and plasma. Preferably, the lipid-like moiety can resist enzyme-mediated ?-oxidation, such as ?-oxidation catalyzed by cytochrome P450 enzymes. Also disclosed are pharmaceutical formulations of the acyclic nucleoside prodrugs. The acyclic nucleoside prodrugs and pharmaceutical formulations thereof can be used to treat viral infections, such as HIV infections, and/or viral-associated cancer, such as HPV-associated cancers.

Abstract: A surface well fracturing system having fluid conduits connected to surface fracturing equipment with quick connect systems is provided. In one embodiment, a fracturing system includes a frac pump, a frac supply manifold, and a fracturing fluid conduit connected to route fracturing fluid between the frac pump and the frac supply manifold. The fracturing fluid conduit is connected to the frac pump or to the frac supply manifold by a quick connect apparatus, which includes a segmented clamp having multiple clamp segments mounted on a shared support. Additional systems, devices, and methods are also disclosed.

Abstract: A clamp includes a first section and a second section. The first section includes a first base portion constructed from a first material and a first bushing fixed to the first base portion and constructed from a second material that is more compressible than the first material. The first bushing includes a first groove with a first projection that can deform based on the size of the cable received within the first groove. The second section is removable connected to the first section and includes a second base portion constructed from a third material, and a second bushing fixed to the second base portion and constructed from a fourth material that is more compressible than the third material. The second bushing includes a second projection and is aligned with the first groove. The second projection can deform based on the size of the cable received within the second groove.

Abstract: A semiconductor device includes first and second nanosheet stacks above an upper surface of a semiconductor substrate, a first source/drain on an end of the first nanosheet stack, and a second source/drain on an end of the second nanosheet stack. A first gate stack wraps around individual channels of the first nanosheet stack and a second gate stack wraps around individual channels the second nanosheet stack. An interlayer dielectric covers the first and second nanosheet stacks, the first and second source/drains, and the first and second gate stacks. The semiconductor device further includes a first source/drain contact that contacts the first source/drain and a second source/drain contact that contacts the second source/drain. The first and second source/drain contacts extend continuously from the first and second source/drains, respectively, to an upper surface of the interlayer dielectric.

Abstract: A technique relates to a semiconductor device. A first epitaxial material is formed under a bottom surface of a set of fins, the first epitaxial material being under fin channel regions of the set of fins. A second epitaxial material is formed adjacent to the first epitaxial material and remote from the fin channel regions, a combination of the first epitaxial material and the second epitaxial material forming a bottom source or drain (source/drain) layer. A top source/drain layer is formed on an upper portion of the set of fins, gate material being disposed around the set of fins between the top source/drain layer and the bottom source/drain layer.