Abstract: A frame shutter type device provides a separated well in which the storage node is located. The storage node is also shielded by a light shield to prevent photoelectric conversion.

Abstract: Charge is integrated in N>=2 different groups within a frame buffer to form multiple image fields.

Abstract: A non-uniform resistor is used with a flash A to D converter in order to provide an A to D output which is not linear. The nonlinearity of the A to D output is specially designed to carry out a predetermined correction of the signal.

Abstract: Differential non-linearity errors in an A/D converter are corrected by an analog system. The system produces different analog voltages which are used to correct the input voltage to the capacitor. The input voltage is changed by an amount which is effective to correct the C&Dgr;V to be the same as it would have been if the DNL error had not occurred.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Abstract: Single substrate device is formed to have an image acquisition device and a controller. The controller on the substrate controls the system operation.

Abstract: A lock in pinned photodiode photodetector includes a plurality of output ports which are sequentially enabled. Each time when the output port is enabled is considered to be a different bin of time. A specified pattern is sent, and the output bins are investigated to look for that pattern. The time when the pattern is received indicates the time of flight.

Abstract: A light-emitting diode array is driven by a digital control. The digital control modulates the pulse width of pulses applied to the light-emitting diode. The intensity of the output is controlled by controlling the width of pulses applied to the light-emitting diode. Since light-emitting diodes have very low inertial energy, this system can be rapidly turned on and turned off. The output is integrated to produce a uniform output.

Abstract: Differential non-linearity errors in an A/D converter are corrected by an analog system. The system produces different analog voltages which are used to correct the input voltage to the capacitor. The input voltage is changed by an amount which is effective to correct the CAV to be the same as it would have been if the DNL error had not occurred.

Abstract: A current mode device for an active pixel sensor includes a voltage to current converter which includes an operation that occurs inside a source follower. The device operates to draw no current while the current is incoming. The device uses two stages of double sampling—one before the current-mode op amp and one after.

Abstract: A wide dynamic range image sensor provides individual pixel reset to vary the integration time of individual pixels. The integration time of each pixel is controlled by column and row reset control signals which activate a logical reset transistor only when both signals coincide for a given pixel.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. A Simple Floating Gate (SFG) pixel structure could also be employed in the imager to provide a non-destructive readout and smaller pixel sizes.

Abstract: Active pixel sensor with separated pixel areas, each sensing a different primary color, red, green or blue. Each of the colors is sensed using a different size color filter element to allow receiving an amount of light dependent on the responses of the image sensor to the specific color.

Abstract: Designs and operational methods to increase the dynamic range of image sensors and APS devices in particular by achieving more than one integration times for each pixel thereof. An APS system with more than one column-parallel signal chains for readout are described for maintaining a high frame rate in readout. Each active pixel is sampled for multiple times during a single frame readout, thus resulting in multiple integration times. The operation methods can also be used to obtain multiple integration times for each pixel with an APS design having a single column-parallel signal chain for readout. Furthermore, analog-to-digital conversion of high speed and high resolution can be implemented.

Abstract: A delta-doped hybrid advanced detector (HAD) is provided which combines at least four types of technologies to create a detector for energetic particles ranging in energy from hundreds of electron volts (eV) to beyond several million eV. The detector is sensitive to photons from visible light to X-rays. The detector is highly energy-sensitive from approximately 10 keV down to hundreds of eV. The detector operates with milliwatt power dissipation, and allows non-sequential readout of the array, enabling various advanced readout schemes.

Abstract: Semiconductor imaging devices integrating an array of visible detectors and another array of infrared detectors into a single module to simultaneously detect both the visible and infrared radiation of an input image. The visible detectors and the infrared detectors may be formed either on two separate substrates or on the same substrate by interleaving visible and infrared detectors.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node.

Abstract: An image sensor operable to vary the output spatial resolution according to a received light level while maintaining a desired signal-to-noise ratio. Signals from neighboring pixels in a pixe patch with an adjustable size are added to increase both the image brightness and signal-to-noise ratio. One embodiment comprises a sensor array for receiving input signals, a frame memory array for temporarily storing a full frame, and an array of self-calibration column integrators for uniform column-parallel signal summation. The column integrators are capable of substantially canceling fixed pattern noise.

Abstract: An imaging device formed as a monolithic complementary metal oxide semiconductor Integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate, a readout circuit including at least an output field effect transistor formed in the substrate, and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node connected to the output transistor and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node and an analog-to-digital converter formed in the substrate connected to the output of the readout circuit.

Abstract: A system and method is described for increasing effective integration time of an optical sensor including holding a first signal within each pixel cell, proportional to light integrated by the pixel cell over the previous frame period, generating a second signal within each pixel cell proportional to light integrated by the pixel cell over the current frame period, and summing the first signal and the second signal from each pixel, thereby producing an output signal representing the light integrated by each pixel over two frame periods.