Abstract: A vacuum insulation panel and an insulation structure of a refrigerator applying the same are disclosed. The vacuum insulation panel comprises: a sealing cover (120) having an outermost layer exposed to the outside, a gas shielding layer stacked on the bottom surface of the outermost layer and formed of a thin metal sheet and a metal deposition film, and a heating-fusion bonding layer stacked on the bottom surface of the gas shielding layer and formed of an octane-base material; a core material (110) sealed by the sealing cover (120) in contact with the heating-fusion bonding layer, and provided with an extended insulation portion (130) some parts of which are extended between the bonding portions formed at the sealing cover (120); and a gas permeation preventing layer (125) formed on the sealing cover (120), so that can prevent an external air or moisture from penetrating into a vacuum insulation panel.

Abstract: Disclosed is a method for annealing a silicon thin film in a substrate in which an insulation layer and the silicon thin film are subsequently formed. The method includes heating or preheating the silicon thin film within a temperature range at which the substrate is not transformed during the process so as to generate an intrinsic carrier therein, thereby lowering a resistance to a value at which Joule heating is possible; and applying an electric field to the preheated silicon thin film so as to induce Joule heating by means of movement of the carrier, thereby conducting crystallization, eliminating crystal defects, and ensuring crystal growth. When using the method, Joule heating is selectively induced to a-Si thin film, a-Si/Poly-Si thin film or a Poly-Si thin film according to the preheating condition, thereby making a Poly-Si thin film of good quality within a very short time without damaging the substrate.

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

Abstract: Provided is a method of fabricating an optoelectronic integrated circuit chip. In particular, a method of fabricating an optoelectronic integrated circuit chip is provided, in which an optical absorption layer of a wave-guide type optical detector is grown to be thicker than a collector layer of a hetero-junction bipolar transistor by using a selective area growth by metal organic chemical vapor deposition (MOCVD) method, and the wave-guide type optical detector and the hetero-junction bipolar transistor are integrated as a single chip on a semi-insulated InP substrate, thereby readily realizing the wave-guide type optical detector improved in quantum efficiency and having the ultra-high speed characteristics.

Abstract: A method for forming foam within a refrigerator cabinet by feedback controlling and a foaming system used for the method are provided to form blowing foam with uniform density. Allowable range of each of parameters, which critically affect the blowing foam quality of the refrigerator cabinet, allowing formation of the blowing foam with the uniform density within the refrigerator cabinet is obtained through experimentation and set in advance, and before forming the blowing foam within the refrigerator cabinet, each parameters are measured to check whether a measured value is within the allowable range. If the measured value does not come within the allowable range, it is controlled to come within the allowable range by using the controlling unit and then the blowing foam is filled and formed within the refrigerator cabinet. By doing that, the reliable blowing foam with high quality and uniform density can be formed.

Abstract: Disclosed is a method for annealing a silicon thin film in a substrate in which an insulation layer and the silicon thin film are subsequently formed. The method includes heating or preheating the silicon thin film within a temperature range at which the substrate is not transformed during the process so as to generate an intrinsic carrier therein, thereby lowering a resistance to a value at which Joule heating is possible; and applying an electric field to the preheated silicon thin film so as to induce Joule heating by means of movement of the carrier, thereby conducting crystallization, eliminating crystal defects, and ensuring crystal growth. When using the method, Joule heating is selectively induced to a-Si thin film, a-Si/Poly-Si thin film or a Poly-Si thin film according to the preheating condition, thereby making a Poly-Si thin film of good quality within a very short time without damaging the substrate.

Abstract: The present invention relates to a diethylene glycol ester based plasticizer composition comprising at least two diethylene glycol ester compounds. The diethylene glycol ester based plasticizer composition of the present invention offers superior tensile strength, elongation, transfer resistance, hardness, transparency, adhesivity, and compatibility with resin, when used for a plasticizer of a polyvinyl chloride resin, without releasing environmental hormones. Thus, it can be used for a polyvinyl chloride resin of a warp film.

Abstract: A rechargeable battery including a bare cell with an electrode assembly having two electrodes and a separator, a case for storing the electrode assembly, a cap plate for covering an opening of the case, and a protection circuit module coupled with the cap assembly. A portion of the lower surface of the protection circuit module is formed of a synthetic resin, and contacts a region of the cap plate also formed of a synthetic resin. The protection circuit module and the cap plate an be coupled together by adhesion, welding or melting.

Abstract: Provided are an optoelectronic (OE) transmitter integrated circuit (IC) and method of fabricating the same using a selective growth process. In the OE transmitter IC, a driving circuit, which includes a double heterojunction bipolar transistor (DHBT) and amplifies received electric signals to drive an electroabsorption (EA) modulator, and the EA modulator with a multi-quantum well (MQW) absorption layer are integrated as a single chip on a semi-insulating substrate. The MQW absorption layer of the EA modulator and an MQW insertion layer of the DHBT are formed to different thicknesses from each other using a selective MOCVD growth process.

Abstract: A secondary battery having an electrode assembly with improved battery capacity. The secondary battery has an electrode assembly including two electrodes and a separator, a case made from an insulative material and having an opening at an upper portion thereof for receiving the electrode assembly therein, and a cap assembly including a cap plate made from an insulative material for sealing the opening to prevent the electrode assembly from being separated from the case.

Abstract: A lithium rechargeable battery includes an electrode assembly that has a first electrode and a second electrode that are wound together with a separator interposed between them, a can that houses the electrode assembly, and a heat-resistant member that is positioned in between the bottom of the interior of the can and the electrode assembly.

Abstract: A lithium ion secondary battery has a shape memory safety vent adapted to discharge internal compressed gas by temporarily being opened when the temperature reaches a predetermined level to avoid a swelling phenomenon of the battery and improve safety. The lithium ion secondary battery includes an electrode assembly having first and second electrode plates wound a number of times with a separator interposed between them; a can having an opening formed on a side thereof to contain the electrode assembly; and a cap plate adapted to cover the can and provided with a vent hole on a side thereof, to which a safety vent adapted to deform at a predetermined temperature and discharge gas from inside the can to the exterior is coupled.

Abstract: A lithium secondary battery includes an electrode assembly having first and second electrodes wound together with a separator interposed between them and an insulation case positioned on the electrode assembly. The insulation case is made of a resin or resin composite material having a tensile strength of at least 500 kg/cm2.

Abstract: An electrode assembly is adapted to prevent the separator from contracting due to heat that is generated near the electrode tab during overcharging, over-discharging, or in the case of an internal short circuit. The electrode assembly also prevents an additional short circuit between the electrode plates. A rechargeable battery that comprises the electrode assembly is also provided. The present invention prevents the electrode tab from being short-circuited due to increased heat generation during overcharging or in the case of a short circuit, thus improving the safety of the rechargeable battery.

Abstract: Disclosed is a switching mode power supply that includes: a power supply section including a main switch coupled to the primary winding of a transformer, wherein the main switch in normal operation mode performs a switching operation at a predetermined duty, wherein the main switch in standby mode does not perform a switching operation during a first interval and performs a switching operation during a second interval at a first duty, thereby supplying power to the secondary winding of the transformer; a mode discriminator for sensing the reception of an external sync signal at the primary winding of the transformer and generating a signal for operating the main switch in normal operation mode or in standby mode according to whether or not the external sync signal is received; a control voltage generator having a first transistor to which a current corresponding to a signal output from the mode discriminator flows, and a first capacitor connected in parallel to the first transistor; and a switching controller

Abstract: A threshold modulation method, includes the steps of: a) determining whether an input pixel value is greater than a threshold of a current input pixel from the original digital image; b) determining whether an output image value is a predetermined high level or low level based on the threshold; c) if the input pixel value is greater than the threshold and the output image value is the predetermined high level, modulating the threshold of the adjacent pixel; d) if the input pixel value is greater than the threshold and the output image value is the predetermined low level, modulating the threshold of the adjacent pixel; e) if the input pixel value is not greater than the threshold and the output image value is the predetermined low level, modulating the threshold of the adjacent pixel; and f) if the input pixel value is not greater than the threshold and the output image value is the predetermined high level, modulating the threshold of the adjacent pixel.