Abstract: The method of the present invention includes providing a silicon substrate having an impurity region, forming an inter-layer insulating film having a contact hole in the impurity region and forming a titanium film and titanium nitride film in the contact hole. The method of the present invention further includes conducting a heat treatment to cause a reaction between the titanium film and the silicon substrate and forming a tungsten plug on the titanium nitride film in the contact hole. The device of the present invention including the bit lines are made up of a first inter-layer insulating film on the substrate having a first contact hole over the impurity region, a titanium film in the first contact hole, a titanium nitride film on the titanium film, a titanium silicide film on the silicon substrate wherein the titanium silicide film does not include an agglomerate, a tungsten plug on the titanium nitride film in the first contact hole and a circuit element on the first inter-layer insulating film.

Abstract: Disclosed is a switching mode power supply that includes: a power supply section including a main switch coupled to the primary winding of a transformer, wherein the main switch in normal operation mode performs a switching operation at a predetermined duty, wherein the main switch in standby mode does not perform a switching operation during a first interval and performs a switching operation during a second interval at a first duty, thereby supplying power to the secondary winding of the transformer; a mode discriminator for sensing the reception of an external sync signal at the primary winding of the transformer and generating a signal for operating the main switch in normal operation mode or in standby mode according to whether or not the external sync signal is received; a control voltage generator having a first transistor to which a current corresponding to a signal output from the mode discriminator flows, and a first capacitor connected in parallel to the first transistor; and a switching controller

Abstract: Disclosed are a conversion coating composition for use in the surface treatment of a PCB and a conversion coating method using the same. The composition comprises 0.1-30 vol % of sulfuric acid; 0.1-15 vol % of hydrogen peroxide; 0.01-10 wt % of an organic acid; 0.1-30 wt % of a nitrogen compound; 0.01-10 wt % of an organic silicate and/or organic titanate; and 0.1-20 wt % of a film forming auxiliary, 0.1-30 wt % of an etching rate controller, 0.1-20 wt % of a reaction promoter and/or 0.1-20 g/l of a stabilizer. This composition is applied to a PCB at 10-60° C. for 1-10 min. The conversion coating film is superb in adhesive strength, acid resistance, and adhesion and can be formed with ease.

Abstract: A method for forming an interconnection of a semiconductor device including a step of sequentially stacking a first insulation layer, a first semiconductor layer, a barrier metal layer and a second semiconductor layer on a semiconductor substrate, a step of forming an amorphous first tungsten silicide layer on the second semiconductor layer, a step of transforming the first tungsten silicide layer into a second tungsten silicide layer having a tetragonal crystal structure by an annealing process; a step of forming an etching mask on the second tungsten silicide layer, and a step of sequentially selectively etching the second tungsten silicide layer, the second semiconductor layer, the barrier metal layer and the first semiconductor layer by employing the etching mask.

Abstract: The method of the present invention includes providing a silicon substrate having an impurity region, forming an inter-layer insulating film having a contact hole in the impurity region and forming a titanium film and titanium nitride film in the contact hole. The method of the present invention further includes conducting a heat treatment to cause a reaction between the titanium film and the silicon substrate and forming a tungsten plug on the titanium nitride film in the contact hole.

Abstract: The present invention relates to a method of forming a contact in semiconductor device, more particularly, to a method of forming a tungsten bitline contact in a semiconductor device which prevents the decrease of impurity ion density in an impurity region and reduces both contact resistance between a plug and the impurity region and leakage current in a junction by forming an extra barrier layer in a metal barrier layer having been deposited on the impurity region, thereby improving operation speed of a semiconductor device and lessening power consumption.

Abstract: A method for controlling a call reception operation in a wide area radio pager, which is capable of providing a continued stable radio call service to the radio pager without generating errors in receiving radio call signals even when the user of the radio pager is positioned in a boundary area between adjacent areas during his area movement. Radio call signals, which are transmitted from a base station, are carried with identification data containing information associated with an area reported to the communication company end as a destination area to which the user of the associated wide area radio pager is to move. Based on such area movement ID data, the radio pager recognizes the destination area to which the user of the radio pager is to move.