Abstract: A semiconductor system includes a semiconductor memory device suitable for storing data, and a host suitable for controlling the semiconductor memory device in response to an external command signal, in which the semiconductor memory device includes a buffer block suitable for storing first data programmed under control of the host, and a main block suitable for storing the second data programmed under control of the host or a copy of the first data stored in the buffer block at a sudden power fail.

Abstract: The present invention relates to a composition for production of photosynthetic light-reaction products comprising photosynthetic membrane vesicles, and a production method for the photosynthetic light-reaction products by using the composition. In addition, the present invention relates to a preparation method for a photosynthetic light-reaction monomer comprising a step of isolating vesicles from the cell membrane of photosynthetic bacteria or algae.

Abstract: Disclosed are a non-volatile memory device capable of performing memory operations in parallel and a method for operating the non-volatile memory device, and a system including the non-volatile memory device. A non-volatile memory system may include a memory controller suitable for controlling a memory; and the memory suitable for performing read and program operations in response to commands from the memory controller, and wherein the memory controller and the memory operate in a high interface mode, and operate in a low interface mode when an operation to read internal data or an operation to receive (N+1)th data is performed during an operation to program Nth data in the memory.

Abstract: A method of continuously producing 5-aminolevulinic acid employs the photosynthetic bacteria-derived photosynthetic membrane vesicle, succinyl-CoA synthetase, and 5-aminolevulinic acid synthase. The enzymatic synthesis of 5-aminolevulinic acid directly from succinic acid and glycine may be simple, but the synthesis is not inexpensive due to the supply of ATP and CoA, which are relatively expensive reactants. The photosynthetic membrane vesicle is used together with succinyl-CoA synthetase and 5-aminolevulinic acid synthase, thereby enabling the re-use of adenosine diphosphate or CoA in reaction. Accordingly, relatively expensive 5-aminolevulinic acid can be efficiently produced at low manufacturing costs from succinic acid and glycine.

Abstract: A data storage device includes a controller configured to update an access request count and an access count corresponding to a target region based on an access request for the target region, and initialize the access count each time the access request count reaches a first threshold, and a nonvolatile memory apparatus including the target region, and configured to access the target region based on a control of the controller.

Abstract: A data storage device includes a nonvolatile memory apparatus suitable for accessing a target region corresponding to an access command, and a processor suitable for calculating a first hash value corresponding to the target region based on a first hash function, and updating an access count that is indexed by the first hash value.

Abstract: A bacterial strain secreting fatty acids, the strain inducing fatty acids to be extracellularly secreted by using phospholipase expressed in the periplasmic space of cell. When a method of producing fatty acids by using the bacterial strain secreting fatty acids is used, fatty acids extracellularly secreted are continuously obtained without apoptosis, leading to lower costs and higher production efficiency. Phospholipase, unlike thioesterase, which is a typical fatty-acid degrading enzyme, decomposes phospholipid to produce free fatty acids. Accordingly, by using the substrate specificity of two different phospholipases, a fatty acid having a specific composition can be selectively produced. Unlike in a typical method in which fat is obtained from cells or tissues, fatty acids secreted during cell growth are obtainable by biding to a hydrophobic material without an extraction process using an organic solvent in large quantities.

Abstract: A data storing system performs a test operation on a memory block on which a read operation is determined to be failed, and determines whether the memory block is or is not a bad block based on a result of the test operation. The data storing system may improve reliability and yield of a device.

Abstract: A method of operating a data storage device includes setting program verify voltages for verifying whether memory cells of a nonvolatile memory device are programmed to desired program states; transmitting the set program verify voltages to the nonvolatile memory device; generating data patterns respectively corresponding to program states based on the program verify voltages; transmitting a data pattern corresponding to the program verify voltages to the nonvolatile memory device; and programming the memory cells with the transmitted data pattern.

Abstract: A semiconductor system includes a semiconductor memory device suitable for storing data, and a host suitable for controlling the semiconductor memory device in response to an external command signal, in which the semiconductor memory device includes a buffer block suitable for storing first data programmed under control of the host, and a main block suitable for storing the second data programmed under control of the host or a copy of the first data stored in the buffer block at a sudden power fail.

Abstract: A data storing system performs a test operation on a memory block on which a read operation is determined to be failed, and determines whether the memory block is or is not a bad block based on a result of the test operation. The data storing system may improve reliability and yield of a device.

Abstract: Disclosed are a non-volatile memory device capable of performing memory operations in parallel and a method for operating the non-volatile memory device, and a system including the non-volatile memory device. A non-volatile memory system may include a memory controller suitable for controlling a memory; and the memory suitable for performing read and program operations in response to commands from the memory controller, and wherein the memory controller and the memory operate in a high interface mode, and operate in a low interface mode when an operation to read internal data or an operation to receive (N+1)th data is performed during an operation to program Nth data in the memory.

Abstract: Provided is an operating method of a data storage device including a plurality of nonvolatile memory devices. The operating method includes the steps of: dividing storage areas of the nonvolatile memory devices into a first memory area and a second memory area; determining wear levels of each of the first memory area and the second memory area; and varying a ratio of the first memory area and the second memory area according to the determined wear levels.

Abstract: A method of operating a semiconductor device may comprise storing data in memory cells coupled to first word lines of memory blocks including the first word lines and second word lines located respectively between the first word lines, detecting a memory block, where data stored in the memory cells of the first word lines is invalidated, from the memory blocks, and storing data in memory cells coupled to the second word lines of the detected memory block.

Abstract: Disclosed is a semiconductor memory device for controlling a memory block. The semiconductor memory device includes a plurality of memory blocks to store data, and controller. The memory controller requests a first memory block, of the plurality of memory blocks, to performing a copy operation to copy the first memory block to a second memory block of the plurality of memory blocks. The controller then requests the first memory block to perform an operation different than the copy operation. The controller then requests the memory block to stop the copy operation based on the to perform an operation different than the copy operation. Finally, the controller requests the memory block to resume the copy operation after the operation different than the copy operation is completed.

Abstract: A method of operating a data storage device includes setting program verify voltages for verifying whether memory cells of a nonvolatile memory device are programmed to desired program states; transmitting the set program verify voltages to the nonvolatile memory device; generating data patterns respectively corresponding to program states based on the program verify voltages; transmitting a data pattern corresponding to the program verify voltages to the nonvolatile memory device; and programming the memory cells with the transmitted data pattern.

Abstract: Provided is an operating method of a data storage device including a plurality of nonvolatile memory devices. The operating method includes the steps of: dividing storage areas of the nonvolatile memory devices into a first memory area and a second memory area; determining wear levels of each of the first memory area and the second memory area; and varying a ratio of the first memory area and the second memory area according to the determined wear levels.

Abstract: The present disclosure relates to methods for producing hydrogen using photosynthetic bacteria comprising a step of culturing the photosynthetic bacteria in the presence of alcohol at the condition under which the photosynthesis occurs. The present methods are cost-effective and have a high applicability due to the increased hydrogen productivity compared to the conventional methods in addition to not being sensitive by the inhibitory action by ammonium ion present in the culture. Thus the present methods are particularly useful for producing hydrogen using organic wastes which contains large amount of ammonia therein.

Abstract: Solid-state storage systems and methods are provided for controlling a wear leveling process for uniform use of the memory cells that replaces worn memory blocks with less frequently used memory blocks. The wear leveling process is performed by changing the physical locations of the storage cells within each memory zone or plane. Reference values of target memory block erase counts and worn memory block erase counts are used for searching target memory blocks to be used as replacements.

Abstract: A nonvolatile memory apparatus includes: a memory controller coupled; and a memory area comprising a plurality of memory blocks controlled by the memory controller. The memory controller sets a plurality of physical blocks corresponding to the plurality of memory blocks, and sets a plurality of logical blocks which are mapping targets of the physical blocks such that a size of the logical blocks and a size of the physical blocks are asymmetrical.