Patents by Inventor Eun-hong Lee

Eun-hong Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070019479
    Abstract: A semiconductor device may include at least one pair of fins on a semiconductor substrate. A channel region may be formed in each fin. The semiconductor device may further include a gate electrode corresponding to each pair of channel regions, a source contact plug electrically connected to each of at least one source formed on a respective fin concurrently, and a drain contact plug electrically connected to each of at least one drain formed on a respective fin concurrently.
    Type: Application
    Filed: March 31, 2006
    Publication date: January 25, 2007
    Inventors: Won-joo Kim, Suk-pil Kim, Yoon-dong Park, Eun-Hong Lee, Jae-woong Hyun, Jung-hoon Lee, Sung-jae Byun
  • Publication number: 20060097306
    Abstract: A multi bits flash memory device and a method of operating the same are disclosed.
    Type: Application
    Filed: October 14, 2005
    Publication date: May 11, 2006
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Won-joo Kim, Yoon-dong Park, Eun-hong Lee, Sun-ae Seo, Sang-min Shin, Jung-hoon Lee, Seung-hyuk Chang
  • Publication number: 20050286287
    Abstract: Provided are a complementary nonvolatile memory device, methods of operating and manufacturing the same, a logic device and semiconductor device having the same, and a reading circuit for the same. The complementary nonvolatile memory device includes a first nonvolatile memory and a second nonvolatile memory which are sequentially stacked and have a complementary relationship. The first and second nonvolatile memories are arranged so that upper surfaces thereof are contiguous.
    Type: Application
    Filed: June 17, 2005
    Publication date: December 29, 2005
    Inventors: Yoon-dong Park, Jo-won Lee, Chung-woo Kim, Eun-hong Lee, Sun-ae Seo, Woo-joo Kim, Hee-soon Chae, Soo-doo Chae, I-hun Song
  • Publication number: 20050173766
    Abstract: In a semiconductor memory, and a manufacturing method thereof, the semiconductor memory includes a gate stack structure formed on a semiconductor substrate, first and second impurity regions formed adjacent each side of the gate stack structure on the semiconductor substrate, the first and second impurity regions having a channel region therebetween, and a contact layer formed on the semiconductor substrate adjacent either the first or second impurity region.
    Type: Application
    Filed: January 5, 2005
    Publication date: August 11, 2005
    Inventors: Hee-soon Chae, Jo-won Lee, Chung-woo Kim, Eun-hong Lee
  • Publication number: 20050112815
    Abstract: In a silicon-oxide-nitride-oxide-silicon (SONOS) memory device, and methods of manufacturing and operating the same, the SONOS memory device includes a semiconductor layer including source and drain regions and a channel region, an upper stack structure formed on the semiconductor layer, the upper stack structure and the semiconductor layer forming an upper SONOS memory device, and a lower stack structure formed under the semiconductor layer, the lower stack structure and the semiconductor layer forming a lower SONOS memory device.
    Type: Application
    Filed: October 12, 2004
    Publication date: May 26, 2005
    Inventors: Moon-kyung Kim, Chung-woo Kim, Jo-won Lee, Eun-hong Lee, Hee-soon Chae