Abstract: The present invention relates to a capsule comprising a pigment and a method for producing the same. More specifically, the present invention relates to a capsule which comprises therein a pigment inside which is likely to be discolored due to external environment, and thereby can easily crack or break and cause color development when applied to the skin, while isolating the pigment from the external environment, and a method for producing the same.

Abstract: Provided a high-pressure homogenizer comprising a channel module comprising a microchannel through which an object for homogenization passes, wherein the microchannel is provided with a first flow channel and a second flow channel sequentially arranged along the direction through which the object passes, the first flow channel is provided with a plurality of first baffles disposed so as to partition the microchannel into a plurality of spaces, the second flow channel is provided with a plurality of second baffles disposed so as to partition the microchannel into a plurality of spaces, and at least one of the first baffles is provided to be positioned between two adjacent second baffles.

Abstract: A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

Abstract: A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

Abstract: A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

Abstract: A packing box includes first and second sidewall parts spaced apart and facing each other, first and second connecting parts, a third connecting part attaching the second connecting part to the first sidewall part, a bottom part connecting lower portions of the first and second sidewall parts and the first and second connecting parts, and a top part facing the bottom part and connecting upper portions of the first and second sidewall parts and the first and second connecting parts to form a receiving space. The top part includes first to fourth upper paperboards folded and extended from the upper portions of the first and second sidewall parts and the first and second connecting parts to form a handle, and a fifth upper paperboard folded from the third connecting part and disposed under the first to fourth upper paperboards to prevent withdrawal of contents from the receiving space.

Abstract: The present invention relates to an apparatus for exfoliating a plate-shaped material for exfoliating graphene, which has features that while a shear force required for the exfoliation of graphite is applied using a specific microchannel, it can simultaneously prevent the graphene itself from being crushed and increase the discharge flow rate of a graphene dispersion, thereby enhancing the production efficiency of graphene.

Abstract: The present invention relates to a peeling device of sheet material for peeling off graphite, and the peeling device of sheet material according to the present invention is characterized in that a specific microchannel is used to apply a shear force required to peel off graphite, and simultaneously, graphene itself is not ground and the discharge flow rate of the graphene dispersion increases to increase graphene preparation efficiency.

Abstract: The present invention relates to a peeling device of sheet material for peeling off graphite, and the peeling device of sheet material according to the present invention is characterized in that a specific microchannel is used to apply a shear force required to peel off graphite, and simultaneously, various sizes of shear forces can be applied according to the sections in the microchannel, thus increasing graphene preparation efficiency.

Abstract: A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

Abstract: A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

Abstract: A semiconductor device includes: a first plug; a bit line which is in contact with the first plug and over the first plug and extended in one direction; a second plug including a first part adjacent to the bit line and a second part adjacent to the first plug; a double air gap which is disposed between the first part of the second plug and the bit line and includes a first air gap surrounding the first part of the second plug and a second air gap parallel to sidewalls of the bit line; and a capping layer suitable for capping the first and second air gaps.

Abstract: A semiconductor device includes at least one trench extending into a semiconductor substrate and lined with a gate dielectric layer; a dipole inducing layer covering a lowermost portion of the lined trench; a gate electrode covering the dipole inducing layer and filled in the lined trench; and doping regions, in the semiconductor substrate, separated from each other by the lined trench and separated from the dipole inducing layer.

Abstract: A method for manufacturing a semiconductor device includes forming a first trench and a second trench in a substrate, the first and the second trenches communicate with each other, the second trench may be formed wider than the first trench; forming a liner layer over an inner surface of the first trench and over an inner surface of the second the trench; forming a capping layer over the liner layer to form a merged overhang and a non-merged overhang, the merged overhang may be fill a top portion of the first trench, the non-merged overhang may be open a top portion of the second trench; and forming a gap-fill layer over the capping layer to fill a lower portion of the first trench and the second trench.

Abstract: A packing box includes first and second sidewall parts spaced apart and facing each other, first and second connecting parts, a third connecting part attaching the second connecting part to the first sidewall part, a bottom part connecting lower portions of the first and second sidewall parts and the first and second connecting parts, and a top part facing the bottom part and connecting upper portions of the first and second sidewall parts and the first and second connecting parts to form a receiving space. The top part includes first to fourth upper paperboards folded and extended from the upper portions of the first and second sidewall parts and the first and second connecting parts to form a handle, and a fifth upper paperboard folded from the third connecting part and disposed under the first to fourth upper paperboards to prevent withdrawal of contents from the receiving space.

Abstract: A semiconductor device including a substrate in which a trench is formed, a first impurity region and a second impurity region formed in the substrate separated from each other by the trench, a gate electrode formed to fill a lower part of the trench, and a capping layer formed over the gate electrode to fill an upper part of the trench. The gate electrode includes a first work function liner formed over a bottom surface and sidewalls of the lower part of the trench without overlapping with the first impurity region and the second impurity region, and including an aluminum-containing metal nitride; and a second work function liner formed over the sidewalls of the lower part of the trench over the first work function liner, overlapping with the first impurity region and the second impurity region, and including a silicon-containing non-metal material.

Abstract: A semiconductor device including a substrate in which a trench is formed, a first impurity region and a second impurity region formed in the substrate separated from each other by the trench, a gate electrode formed to fill a lower part of the trench, and a capping layer formed over the gate electrode to fill an upper part of the trench. The gate electrode includes a first work function liner formed over a bottom surface and sidewalls of the lower part of the trench without overlapping with the first impurity region and the second impurity region, and including an aluminum-containing metal nitride; and a second work function liner formed over the sidewalls of the lower part of the trench over the first work function liner, overlapping with the first impurity region and the second impurity region, and including a silicon-containing non-metal material.

Abstract: A semiconductor device including a substrate in which a trench is formed, a first impurity region and a second impurity region formed in the substrate separated from each other by the trench, a gate electrode formed to fill a lower part of the trench, and a capping layer formed over the gate electrode to fill an upper part of the trench. The gate electrode includes a first work function liner formed over a bottom surface and sidewalls of the lower part of the trench without overlapping with the first impurity region and the second impurity region, and including an aluminum-containing metal nitride; and a second work function liner formed over the sidewalls of the lower part of the trench over the first work function liner, overlapping with the first impurity region and the second impurity region, and including a silicon-containing non-metal material.

Abstract: The present invention relates to a method for manufacturing polysilicon. According to the present invention, meltdown can be prevented during the growth of silicon rod, and a polycrystalline silicon rod having a larger diameter can be shortly manufactured with a minimal consumption of energy.

Abstract: The present disclosure relates to a white balance method for performing a shading compensation, and more particularly, a white balance method for performing a shading compensation, in which a white balance control is initiated for an input image captured when a camera is driven, and then the shading compensation is performed together during a process of performing the initiated white balance control. The white balance method for performing a shading compensation includes executing a white balance for adjusting a color temperature of an input image, extracting a shading gain table corresponding to the color temperature among pre-stored shading gain tables for each color temperature during the execution of the white balance, executing a shading compensation for an image for each block of the input image by using the extracted shading gain table, and terminating the white balance.