Abstract: Provided are novel polymer brushes that may be used in underlying buffer or imaging layers for block copolymer lithography. The novel polymer brushes include X-A-b-B and X-A-b-C block copolymer brushes, with X an anchoring group, the A block a lithographically sensitive polymer, and the C block a random copolymer. According to various embodiments, polymer block brushes for neutral and preferential layers are provided; the neutral layers non-preferential to the overlying block copolymer and the preferential layers preferential to a block of the overlying block copolymer. Also provided are novel methods of patterning polymer block brush layers as well as polymer block brush buffer and imaging layers that are directly patternable by e-beam, deep UV, extreme UV, X-ray or other lithographic methods.

Abstract: A method of an aspect includes forming a first thicker layer of a first material over a first region having a first surface material by separately forming each of a first plurality of thinner layers by selective chemical reaction. The method also includes limiting encroachment of each of the first plurality of thinner layers over a second region that is adjacent to the first region. A second thicker layer of a second material is formed over the second region having a second surface material that is different than the first surface material.

Abstract: A method of an aspect includes forming a directed self assembly alignment promotion layer over a surface of a substrate having a first patterned region and a second patterned region. A first directed self assembly alignment promotion material is formed selectively over the first patterned region without using lithographic patterning. The method also includes forming an assembled layer over the directed self assembly alignment promotion layer by directed self assembly. A plurality of assembled structures are formed that each include predominantly a first type of polymer over the first directed self assembly alignment promotion material. The assembled structures are each adjacently surrounded by predominantly a second different type of polymer over the second patterned region. The first directed self assembly alignment promotion material has a greater chemical affinity for the first type of polymer than for the second different type of polymer.

Abstract: The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

Abstract: Surface-modifying layers, including neutral layers for vertical domain-forming block copolymers of styrene and methyl methacrylate are provided. Also provided are self-assembled block copolymer structures incorporating the surface modifying layers, methods of fabricating such structures and methods of using the structures in BCP lithography applications. The surface-modifying layers comprise a crosslinked copolymer film, wherein the crosslinked copolymers are random copolymers polymerized from styrene monomers and/or (meth)acrylate monomers and crosslinkable epoxy group-functionalized monomers. The crosslinked copolymer films are characterized by a high content of the crosslinkable epoxy group-functionalized monomer.

Abstract: Block copolymer-based mask structures for the growth of patterned polymer brushes via surface-initiated atom transfer radical polymerization (SI-ATRP) are provided. Also provided are methods of making the mask structures and methods of using the mask structures to grow patterned polymer brushes. The mask structures comprise a substrate having a surface, a neutral layer comprising a crosslinked copolymer film disposed on the surface of the substrate and a domain-forming block copolymer film disposed on the crosslinked copolymer film. The crosslinked copolymer film comprises crosslinked random copolymer chains having pendant alkyl halide functional groups that are capable of acting as ATRP initiating sites.

Abstract: Self-aligned via and plug patterning for back end of line (BEOL) interconnects are described. In an example, a structure for directed self-assembly includes a substrate and a block co-polymer structure disposed above the substrate. The block co-polymer structure has a polystyrene (PS) component and a polymethyl methacrylate (PMMA) component. One of the PS component or the PMMA component is photosensitive.

Abstract: Surface-modifying layers, including neutral layers for vertical domain-forming block copolymers of styrene and methyl methacrylate are provided. Also provided are self-assembled block copolymer structures incorporating the surface modifying layers, methods of fabricating such structures and methods of using the structures in BCP lithography applications. The surface-modifying layers comprise a crosslinked copolymer film, wherein the crosslinked copolymers are random copolymers polymerized from styrene monomers and/or (meth)acrylate monomers and crosslinkable epoxy group-functionalized monomers. The crosslinked copolymer films are characterized by a high content of the crosslinkable epoxy group-functionalized monomer.

Abstract: The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

Abstract: The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

Abstract: The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

Abstract: Provided are novel polymer brushes that may be used in underlying buffer or imaging layers for block copolymer lithography. The novel polymer brushes include X-A-b-B and X-A-b-C block copolymer brushes, with X an anchoring group, the A block a lithographically sensitive polymer, and the C block a random copolymer. According to various embodiments; polymer block brushes for neutral and preferential layers are provided; the neutral layers non-preferential to the overlying block copolymer and the preferential layers preferential to a block of the overlying block copolymer. Also provided are novel methods of patterning polymer block brush layers as well as polymer block brush buffer and imaging layers that are directly patternable by e-beam, deep UV, extreme UV, X-ray or other lithographic methods.

Abstract: The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.

Abstract: The present invention provides structures including a substrate, a crosslinked polymer film disposed over the substrate, and a patterned diblock copolymer film disposed over the crosslinked polymer film. The crosslinked polymer comprises a random copolymer polymerized from a first monomer, a second monomer, and a photo-crosslinkable and/or thermally crosslinkable third monomer, including epoxy-functional or acrylyol-functional monomers. Also disclosed are methods for forming the structures.