Abstract: Methods for forming an assembly for transfer of a useful layer are described. In an embodiment, the method includes forming a useful layer on a first support having an interface therebetween, and a residual material on a portion of the first support to form the assembly, and processing the assembly to attenuate any bond between the useful layer and the first support caused by the residual material. An implementation of the method includes processing the assembly to remove residual material. In another variation, processing of the assembly includes forming at least one cut or separating channel between a free surface of the useful layer and the interface to separate the useful layer from contact with the residual material. In yet another variation, processing of the assembly includes forming a peripheral recess so that the residual material does not contact the useful layer.

Abstract: A method of producing a crystal formed from a first monocrystalline material. The preferred method includes assembling a first substrate with at least one film or at least one layer formed from a second monocrystalline material, and growing the first material on the film or thin layer. The invention also provides a corresponding crystal.

Abstract: A method is provided for fabricating a substrate for optics, electronics, or optoelectronics. This method includes the steps of transferring a seed layer to a support layer, depositing a working layer onto the seed layer to form a composite substrate and detaching the working layer and the seed layer from the support to form a substrate. Advantageously, the support substrate comprises a material having a thermal expansion value of about 0.7 to 3 times the coefficient value of the working layer.

Abstract: A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties.

Abstract: The present invention relates to a method for recycling a substrate that has a residue on its surface and a detachment profile resulting from an implantation process. The method includes removing the residue from the substrate to a level substantially equivalent to that of the detachment profile, thus obtaining a substantially uniform planar surface on the substrate, and then polishing the entire surface of the substrate to eliminate defects.

Abstract: A method for providing a smooth wafer surface. The technique includes formulating an abrasive mixture by mixing diamond particles and silica particles in a solution based on a predetermined diamond/silica volume ratio mixing diamond particles, and polishing a surface of the wafer with the abrasive mixture to obtain a desired smoothness.

Abstract: A method of fabricating substrates while minimizing loss of starting material of an ingot, wherein a layer is transferred onto a support. The technique includes forming a flat front face on a raw ingot of material, implanting atomic species through the front face to a controlled mean implantation depth to create a zone of weakness that defines a top layer of the ingot, bonding a support to the front face of the ingot, wherein the support has a surface area that is smaller than a surface area of the front face of the ingot, and detaching from the ingot at the zone of weakness that portion of the top layer that is bonded to the support to form the substrate.

Abstract: A method is provided for fabricating a substrate for optics, electronics, or optoelectronics. This method includes the steps of transferring a seed layer to a support layer, depositing a working layer onto the seed layer to form a composite substrate and detaching the working layer and the seed layer from the support to form a substrate. Advantageously, the support substrate comprises a material having a thermal expansion value of about 0.7 to 3 times the coefficient value of the working layer.

Abstract: A method for manufacturing a free-standing substrate made of a semiconductor material. A first assembly is provided and it includes a relatively thinner nucleation layer of a first material, a support of a second material, and a removable bonding interface defined between facing surfaces of the nucleation layer and support. A substrate of a relatively thicker layer of a third material is grown, by epitaxy on the nucleation layer, to form a second assembly with the substrate attaining a sufficient thickness to be free-standing. The third material is preferably a monocrystalline material. Also, the removable character of the bonding interface is preserved with at least the substrate being heated to an epitaxial growth temperature.

Abstract: The invention relates to a process for manufacturing a stacked structure comprising at least one thin layer bonding to a target substrate, comprising the following steps:

Abstract: The invention concerns a method of fabricating a substrate that includes a layer of at least one semiconductor material on a support. The substrate is fabricated by affixing a nucleation layer to an intermediate support substrate to form a barrier layer against diffusion of atoms from the intermediate support substrate, depositing at least one layer of semiconductor material to the nucleation layer; attaching a target substrate to the deposited semiconductor material to form a final support assembly, and removing the intermediate support substrate and the nucleation layer from the final support assembly. The final support assembly includes the target substrate, the deposited semiconductor material, the nucleation layer and the intermediate support substrate so that, after removal of the intermediate support substrate, a substrate is provided that includes at least one layer of at least one semiconductor material on a support.

Abstract: Methods for fabricating final substrates for use in optics, electronics, or optoelectronics are described. In an embodiment, the method includes forming a zone of weakness beneath a surface of a source substrate to define a transfer layer, and forming a first bonding layer on the source substrate surface. A second bonding layer may be formed on a surface of an intermediate support, and the exposed surfaces of the first and second bonding layers joined to form a composite substrate. Next, the source substrate is detached from the composite substrate along the zone of weakness to expose a surface of the transfer layer, and a support material is deposited onto the exposed surface of the transfer layer. The transfer layer and support material are then separated from the composite substrate by elimination of at least the first bonding layer to form the final substrate. The zone of weakness may advantageously be formed by implanting atomic species into the source substrate.

Abstract: Processes that may be used in producing electronic, opotoelectronic, or optical components may be provided. The processes may involve preparing a reusable donor wafer for donating a thin layer of semiconductor material by assembling a donor layer of a semiconductor material having a thickness of plural thin layers onto a support layer of. The semiconductor material for the support layer may be selected to be less precious or to have a lower quality than the donor layer. The support layer may have sufficient mechanical characteristics for supporting the donor layer during desired semiconductor processing treatments.

Abstract: The present invention relates to a semiconductor device with vertical electron injection, comprising a support substrate (2), a structure comprising at least one monocrystalline thin film (7) transferred onto the support substrate and integral with the support substrate, and at least one electronic component, the support substrate (2) comprising at least one recess enabling electric or electronic access to the electronic component, through the monocrystalline thin film, the device also comprising means (13, 14) enabling vertical electron injection into the electronic component.