Abstract: Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

Abstract: A memory device is provided that includes a plurality of memory cells where each memory cell includes a source region, a drain region and a floating gate. A coupling bit-line is also provided that extends over at least one column of the plurality of memory cells. The coupling bit-line may be formed on each of the floating gates of memory cells forming the column of the plurality of memory cells. The coupling bit-line may also be formed within a well of each of memory cells forming the column of the plurality of memory cells.

Abstract: Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.

Abstract: A CML XOR logic circuit is provided that includes a pair of pull-up transistors, a pair of current source transistors and a logic switch network coupled between the pull-up transistors and the current source transistors. The logic switch network including a plurality of transistors divided into a first branch, a second branch and a third branch. A tail current flows through the first branch, the second branch or the third branch based on at least two input signals to the plurality of transistors.

Abstract: Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.

Abstract: Embodiments relate to a Floating Body Dynamic Random Access Memory (FBDRAM). The FBDRAM utilizes a purge line to reset a FBDRAM cell, prior to writing data to the FBDRAM cell.

Abstract: A resonance suppression circuit is provided to suppress resonance on a power grid of a chip or die. The resonance suppression circuit may include a band-pass filter portion, a comparator portion, an amplification portion and a current dissipation portion. The band-pass filter portion may include an inverter coupled between two signal lines of the power grid. The comparator portion may sense voltage fluctuations at approximately the resonance frequency and trigger the current dissipation portion to turn ON and thereby change the frequency spectrum of the load current on the power grid to suppress the power grid resonance.

Abstract: Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

Abstract: A floating-body dynamic random access memory device may include a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer may be formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode may be formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body. The gate electrode may only partially deplete a region of the semiconductor body, and the partially depleted region may be used as a storage node for logic states.

Abstract: A two transistor memory cell includes a write transistor and a read transistor. When reading the memory cell, the read transistor is turned on, and a voltage develops on a read bit line.

Abstract: A transistor may have degraded characteristics because of an overvoltage condition. The degraded characteristics may be sensed to determine that the transistor has previously been subjected to an overvoltage condition.

Abstract: A circuit to provide a differential signal output in response to a single-ended signal input, the circuit allowing for a wide common-mode input signal by providing complementary amplifier structures.

Abstract: An apparatus and method for generating signals with improved timing resolution includes a delay cell configured to receive dual coupled differential input signals. The delay cell performs an interpolation function which smooths state transitions or other discontinuities that result from timing or phase offsets between the input signals. The interpolation function is performed by resistors which couple respective components of the differential inputs prior to traversing delay paths. A delay cell of this type has high supply noise rejection and a low output swing range, thereby making it suitable for a number of applications. One application includes a jitter noise generator which uses the delay cell to achieve improved timing resolution and which is not limited by a minimum delay of the cell. Another application uses the delay cell to form a coupled delay line.

Abstract: A laser driver for high speed interconnections may convert a digital signal to a current train of a bias mode to represent logical zero and of a modulation mode to represent logical one. An optical signal thus produced may include an optical offset. An optical receiver may include a photo-detector to receive the optical signal and generate a current signal, which includes a corresponding current offset. A first amplifier stage converts the current signal to a voltage signal and a second amplifier stage generates a digital output from the voltage signal. One or more low-pass filters may be used to filter the digital output and generate a filtered offset signal for a differential amplifier to generate an offset cancellation signal. The offset cancellation signal may be provided to offset cancellation circuitry to remove the current offset from the current signal generated by the photo-detector.

Abstract: One embodiment of a laser driver for high speed interconnections includes a buffered level shifter to shift the input voltage level to an appropriate level. In some embodiments the buffered level shifter may be tuned to provide a desired level shift with impedance matched to the driving load. Another embodiment converts a digital signal to a current train of a bias mode to represent logical zero and of a modulation mode to represent logical one, wherein one or both of the bias mode and modulation mode may be adjusted, for example by a programmable control circuit or by an adaptive control circuit. Some embodiments also provide circuitry for reducing overshoot of the output signal.

Abstract: A resonance suppression circuit is provided to suppress resonance on a power grid of a chip or die. The resonance suppression circuit may include a band-pass filter portion, a comparator portion, an amplification portion and a current dissipation portion. The band-pass filter portion may include an inverter coupled between two signal lines of the power grid. The comparator portion may sense voltage fluctuations at approximately the resonance frequency and trigger the current dissipation portion to turn ON and thereby change the frequency spectrum of the load current on the power grid to suppress the power grid resonance.

Abstract: An apparatus and method for generating a reference in a memory circuit are disclosed. At least two dummy bit-cells are used to generate a reference voltage. One cell has high value stored and the other has a low value stored. The cells are activated and discharged into respective bit-lines. The bit-lines are equalized during the discharge process to generate a reference that is approximately a mid point between a high value cell and a low value cell.

Abstract: A circuit to provide a differential signal output in response to a single-ended signal input, the circuit allowing for a wide common-mode input signal by providing complementary amplifier structures.

Abstract: Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

Abstract: Some embodiments provide pre-charge of a bit-line coupled to a memory cell to a reference voltage using a pre-charge device, discharge of the bit-line based on a value stored by the memory cell, injection during the discharge, of a first current into the bit-line using the pre-charge device, and injection, during the discharge, of a second current into a reference bit-line using a second pre-charge device. Also during the discharge, a difference is sensed between a voltage on the bit-line and a voltage on the reference bit-line.