Patents by Inventor Fabrice Paillet

Fabrice Paillet has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080143407
    Abstract: Embodiments of a signal generating circuit are generally described herein. Other embodiments may be described and claimed.
    Type: Application
    Filed: December 19, 2006
    Publication date: June 19, 2008
    Inventors: Gerhard Schrom, Dinesh Somasekhar, Fabrice Paillet, Peter Hazucha, Sung Tae Moon, Tanay Karnik
  • Patent number: 7386080
    Abstract: A system and method for sampling a data stream generates a number of clock signals having equally spaced phases and then samples a data stream using the clock signals. The clock phases are preferably based on a predetermined fraction of a data rate frequency of the data stream, and sampling is performed based on predetermined combinations of the clock signals. While the system and method is suitable for sampling data transmitted for a wide variety of data rates, the system and method is especially well-suited to sampling at data transmitted at high rates, for example, equal to or greater than 20 Gb/s.
    Type: Grant
    Filed: September 30, 2003
    Date of Patent: June 10, 2008
    Assignee: Intel Corportion
    Inventors: Fabrice Paillet, Tanay Karnik, Jianping Xu
  • Publication number: 20080100371
    Abstract: Some embodiments disclosed herein provide dual rail generators to provide a high and a low supply rail.
    Type: Application
    Filed: October 26, 2006
    Publication date: May 1, 2008
    Inventors: Fabrice Paillet, Peter Hazucha, Gerhard Schrom, Tanay Karnik, Sung T. Moon
  • Patent number: 7355246
    Abstract: Some embodiments provide a memory cell comprising a body region doped with charge carriers of a first type, a source region disposed in the body region and doped with charge carriers of a second type, and a drain region disposed in the body region and doped with charge carriers of the second type. According to some embodiments, the body region, the source region, and the drain region are oriented in a first direction, the body region and the source region form a first junction, and the body region and the drain region form a second junction. Moreover, a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased. Some embodiments further include a transistor oriented in a second direction, wherein the second direction is not parallel to the first direction.
    Type: Grant
    Filed: November 7, 2005
    Date of Patent: April 8, 2008
    Assignee: Intel Corporation
    Inventors: Ali Keshavarzi, Stephen H. Tang, Dinesh Somasekhar, Fabrice Paillet, Muhammad M. Khellah, Yibin Ye, Shih-Lien L. Lu, Vivek K. De
  • Publication number: 20080080103
    Abstract: Some embodiments include a die having an output control circuit to interact with an output circuit to convert a source voltage into at least one output voltage. The die may also have a converter circuit to convert the output voltage into at least one additional output voltage.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 3, 2008
    Inventors: Fabrice Paillet, Nick Triantafillou, Azam Barkatullah, Daniel Elmhurst, Peter Harrington, Raymond W. Zeng
  • Patent number: 7348821
    Abstract: A device includes a first circuit having rows and columns of delay cells to generate delayed signals based on an input signal. The delayed signals are selectable and have a different delay from one another with respect to the input signal. The device is programmable based on a delay code. Different values of the delay code allow the device to select different delayed signals. The device may select one of the delayed signals from the first circuit for use as a timing signal in a second circuit of the device. The device may also use the delayed signals from the first circuit to evaluate a clock and data recovery circuit. In an embodiment, the circuits may be located on a single die.
    Type: Grant
    Filed: September 22, 2004
    Date of Patent: March 25, 2008
    Assignee: Intel Corporation
    Inventors: Jianping Xu, KyeHyung Lee, Fabrice Paillet, David Rennie, Tanay Karnik
  • Patent number: 7321502
    Abstract: A method is described that induced dielectric breakdown within a capacitor's dielectric material while driving a current through the capacitor. The current is specific to data that is being written into the capacitor. The method also involves reading the data by interpreting behavior of the capacitor that is determined by the capacitor's resistance, where, the capacitor's resistance is a consequence of the inducing and the driving.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: January 22, 2008
    Assignee: Intel Corporation
    Inventors: Fabrice Paillet, Ali Keshavarzi, Muhammad M. Khellah, Dinesh Somasekhar, Yibin Ye, Stephen H. Tang, Alavi Mohsen, Vivek K. De
  • Publication number: 20080003760
    Abstract: An embodiment is a magnetic via. More specifically, an embodiment is a magnetic via that increases the inductance of, for example, an integrated inductor or transformer while mitigating eddy currents therein that may limit the operation of the inductor or transformer at high frequency.
    Type: Application
    Filed: June 30, 2006
    Publication date: January 3, 2008
    Inventors: Donald S. Gardner, Gerhard Schrom, Peter Hazucha, Fabrice Paillet, Tanay Karnik
  • Publication number: 20080001698
    Abstract: Multiple-inductor embodiments for use in substrates are provided herein.
    Type: Application
    Filed: June 29, 2006
    Publication date: January 3, 2008
    Inventors: Peter Hazucha, Trang T. Nguyen, Gerhard Schrom, Fabrice Paillet, Donald S. Gardner, Sung T. Moon, Tanay Karnik
  • Publication number: 20080001701
    Abstract: An embodiment is a magnetic via. More specifically, an embodiment is a magnetic via that increases the inductance of, for example, an integrated inductor or transformer while mitigating eddy currents therein that may limit the operation of the inductor or transformer at high frequency.
    Type: Application
    Filed: June 30, 2006
    Publication date: January 3, 2008
    Inventors: Donald S. Gardner, Gerhard Schrom, Peter Hazucha, Fabrice Paillet, Tanay Karnik
  • Publication number: 20080001699
    Abstract: An embodiment is an inductor that may include a slotted magnetic material to decrease eddy currents therein that may limit the operation of the inductor at high frequency. An embodiment may employ electro- or electroless plating techniques to form a layer or layers of magnetic material within the slotted magnetic material structure, and in particular those magnetic material layers adjacent to insulator layers.
    Type: Application
    Filed: June 30, 2006
    Publication date: January 3, 2008
    Inventors: Donald S. Gardner, Gerhard Schrom, Peter Hazucha, Fabrice Paillet, Tanay Karnik
  • Publication number: 20080002380
    Abstract: An inductor and multiple inductors embedded in a substrate (e.g., IC package substrate, board substrate, and/or other substrate) is provided herein.
    Type: Application
    Filed: June 29, 2006
    Publication date: January 3, 2008
    Inventors: Peter Hazucha, Edward Burton, Trang T. Nguyen, Gerhard Schrom, Fabrice Paillet, Kaladhar Radhakrishnan, Donald S. Gardner, Sung T. Moon, Tanay Karnik
  • Publication number: 20080003699
    Abstract: An embodiment is an inductor that may include a laminated material structure to decrease eddy currents therein that may limit the operation of the inductor at high frequency. An embodiment may employ electroless plating techniques to form a layer or layers of magnetic material within the laminated material structure, and in particular those magnetic layers adjacent to insulator layers.
    Type: Application
    Filed: June 30, 2006
    Publication date: January 3, 2008
    Inventors: Donald S. Gardner, Gerhard Schrom, Peter Hazucha, Fabrice Paillet, Tanay Karnik
  • Patent number: 7295474
    Abstract: A cell in an information storage cell array is written, by asserting a signal on a bit line that is coupled to the cell and to a group of other cells in the array, to a first voltage. The cell is read by asserting a signal on a word line that is coupled to the cell and to another group of cells in the array, in a direction of, but without reaching, the first voltage. Other embodiments are also described and claimed.
    Type: Grant
    Filed: June 30, 2005
    Date of Patent: November 13, 2007
    Assignee: Intel Corporation
    Inventors: Yibin Ye, Muhammad M. Khellah, Dinesh Somasekhar, Ali Keshavarzi, Fabrice Paillet, Vivek K. De
  • Patent number: 7280425
    Abstract: A one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. Access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.
    Type: Grant
    Filed: September 30, 2005
    Date of Patent: October 9, 2007
    Assignee: Intel Corporation
    Inventors: Ali Keshavarzi, Fabrice Paillet, Muhammad M. Khellah, Dinesh Somasekhar, Yibin Ye, Stephen H. Tang, Mohsen Alavi, Vivek K. De
  • Patent number: 7274250
    Abstract: A temperature-independent voltage reference containing two independent bias circuits powered by the reference voltage, each bias circuit containing components with an exponential dependence of current on voltage and one containing a resistive impedance, and further including voltage dividers and an active component.
    Type: Grant
    Filed: June 28, 2005
    Date of Patent: September 25, 2007
    Assignee: Intel Corporation
    Inventors: Peter Hazucha, Sung T. Moon, Gerhard Schrom, Fabrice Paillet, Tanay Karnik, Vivek De
  • Patent number: 7262107
    Abstract: A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing techniques. Other embodiments are described and claimed.
    Type: Grant
    Filed: June 29, 2005
    Date of Patent: August 28, 2007
    Assignee: Intel Corporation
    Inventors: Stephen H. Tang, Ali Keshavarzi, Dinesh Somasekhar, Fabrice Paillet, Muhammad M. Khellah, Yibin Ye, Shih-Lien L. Lu, Vivek K. De
  • Patent number: 7236410
    Abstract: A system includes a pull-up circuit to program a memory cell. The pull-up circuit may include a level shifter to receive a control signal, a supply voltage, and one or more of a plurality of rail voltages, each of the plurality of rail voltages substantially equal to a respective integer multiple of the supply voltage, and to generate a second control signal, and a cascode stage. The cascode stage may include a plurality of transistors, a gate voltage of each of the plurality of transistors to be controlled at least in part by a respective one of the second control signal, the supply voltage, and at least one of the plurality of rail voltages, and an output node to provide a cell programming signal.
    Type: Grant
    Filed: June 27, 2005
    Date of Patent: June 26, 2007
    Assignee: Intel Corporation
    Inventors: Gerhard Schrom, Fabrice Paillet, Tanay Karnik, Dinesh Somasekhar, Yibin Ye, Ali Keshavarzi, Muhammad M. Khellah, Vivek K. De
  • Patent number: 7230846
    Abstract: In general, in one aspect, the disclosure describes a memory array including a plurality of memory cells arranged in rows and columns. Each memory cell includes a transistor having a floating body capable of storing a charge. A plurality of word lines and purge lines are interconnected to rows of memory cells. A plurality of bit lines are interconnected to columns of memory cells. Driving signals provided via the word lines, the purge lines, and the bit lines can cooperate to alter the charge of the floating body region in one or more of the memory cells.
    Type: Grant
    Filed: June 14, 2005
    Date of Patent: June 12, 2007
    Assignee: Intel Corporation
    Inventors: Ali Keshavarzi, Stephen H Tang, Dinesh Somasekhar, Fabrice Paillet, Muhammad M Khellah, Yibin Ye, Vivek K De, Gerhard Schrom
  • Patent number: 7215173
    Abstract: In general, in one aspect, the disclosure describes an apparatus for shifting a low swing signal. The apparatus includes a first pair of transistors to receive a first input signal and a second input signal and to generate a first output signal that is a shifted version of the first input signal. The apparatus further includes a second pair of transistors to receive the first input signal and the second input signal and to generate a second output signal that is a shifted version of the second input signal.
    Type: Grant
    Filed: January 31, 2005
    Date of Patent: May 8, 2007
    Assignee: Intel Corporation
    Inventors: Fabrice Paillet, David J. Rennie, Tanay Karnik, Jianping Xu