Abstract: An apparatus includes a magnetic core, a ground node, and one or more vias to provide a connection between the magnetic core and the ground potential. The magnetic core includes a first magnetic layer and a second magnetic layer. In addition, the apparatus may include a conductive pattern. The conductive pattern may be at a third layer between the first and second magnetic layers. The apparatus may be included in inductors, transformers, transmission lines, and other components using ferromagnetic cores or shields. Such components may be integrated on a chip or die.

Abstract: A signal generating circuit is provided. The signal generating circuit may include a plurality of delay circuits coupled to provide a plurality of control signals, a weighted-sum circuit to receive the plurality of control signals and to provide an output analog signal, and a comparator circuit to compare the output analog signal with a voltage and to provide a pulse width modulated (PWM) signal based on the comparison.

Abstract: An embodiment is an inductor that may include a slotted magnetic material to decrease eddy currents therein that may limit the operation of the inductor at high frequency. An embodiment may employ electro- or electroless plating techniques to form a layer or layers of magnetic material within the slotted magnetic material structure, and in particular those magnetic material layers adjacent to insulator layers.

Abstract: A multiphase DC-DC converter is provided that includes a multiphase transformer, the multiphase transformer including a plurality of input voltage terminals and an transformer output voltage terminal, each input voltage terminal associated with a corresponding phase. Each phase is assigned to an input voltage terminal of the plurality of input voltage terminals to minimize a ripple current at the input voltage terminals of the multiphase transformer.

Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of magnetic material and at least one via structure disposed in a first dielectric layer, forming a second dielectric layer disposed on the first magnetic layer, forming at least one conductive structure disposed in the second dielectric layer, forming a third layer of dielectric material disposed on the conductive structure, forming a second layer of magnetic material disposed in the third layer of dielectric material and in the second layer of dielectric material, wherein the first and second layers of the magnetic material are coupled to one another.

Abstract: An apparatus includes a magnetic core, a ground node, and one or more vias to provide a connection between the magnetic core and the ground potential. The magnetic core includes a first magnetic layer and a second magnetic layer. In addition, the apparatus may include a conductive pattern. The conductive pattern may be at a third layer between the first and second magnetic layers. The apparatus may be included in inductors, transformers, transmission lines, and other components using ferromagnetic cores or shields. Such components may be integrated on a chip or die.

Abstract: A laser driver for high speed interconnections may convert a digital signal to a current train of a bias mode to represent logical zero and of a modulation mode to represent logical one. An optical signal thus produced may include an optical offset. An optical receiver may include a photo-detector to receive the optical signal and generate a current signal, which includes a corresponding current offset. A first amplifier stage converts the current signal to a voltage signal and a second amplifier stage generates a digital output from the voltage signal. One or more low-pass filters may be used to filter the digital output and generate a filtered offset signal for a differential amplifier to generate an offset cancellation signal. The offset cancellation signal may be provided to offset cancellation circuitry to remove the current offset from the current signal generated by the photo-detector.

Abstract: Methods and associated structures of forming microelectronic devices are described. Those methods may include forming a first layer of a magnetic material on a substrate, forming an oxide layer on the first layer of the magnetic material, forming at least one conductive structure on the first magnetic layer, forming a dielectric layer on the at least one conductive structure, forming a second layer of the magnetic material on the at least one conductive structure, and forming a magnetic via coupled to the first and second layers of the magnetic material, wherein the magnetic via comprises a shape to increase inductance of the inductive structure.

Abstract: A voltage droop detector captures the very high-frequency noise on the power grid of a load, such as a microprocessor. The droop detector includes twin circuits, one of which receives the voltage from the power grid of the load, the other of which receives a filtered voltage. A 0th droop, as well as 1st droops, 2nd droops, and so on, are captured and stored for subsequent analysis. The circuits sample the voltages frequently enough to ensure that all droop events are captured. Other embodiments are described and claimed.

Abstract: An embodiment is an inductor that may include a slotted magnetic material to decrease eddy currents therein that may limit the operation of the inductor at high frequency. An embodiment may employ electro- or electroless plating techniques to form a layer or layers of magnetic material within the slotted magnetic material structure, and in particular those magnetic material layers adjacent to insulator layers.

Abstract: A floating-body dynamic random access memory device may include a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer may be formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode may be formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body. The gate electrode may only partially deplete a region of the semiconductor body, and the partially depleted region may be used as a storage node for logic states.

Abstract: One embodiment of a laser driver for high speed interconnections includes a buffered level shifter to shift the input voltage level to an appropriate level. In some embodiments the buffered level shifter may be tuned to provide a desired level shift with impedance matched to the driving load. Another embodiment converts a digital signal to a current train of a bias mode to represent logical zero and of a modulation mode to represent logical one, wherein one or both of the bias mode and modulation mode may be adjusted, for example by a programmable control circuit or by an adaptive control circuit. Some embodiments also provide circuitry for reducing overshoot of the output signal.

Abstract: A multiphase DC-DC converter is provided that includes a multiphase transformer, the multiphase transformer including a plurality of input voltage terminals and an transformer output voltage terminal, each input voltage terminal associated with a corresponding phase. Each phase is assigned to an input voltage terminal of the plurality of input voltage terminals to minimize a ripple current at the input voltage terminals of the multiphase transformer.

Abstract: Some embodiments provide a memory cell that includes a body region, a source region and a drain region. The body region is doped with charge carriers of a first type, the source region is disposed in the body region and doped with charge carriers of a second type, and the drain region is disposed in the body region and doped with charge carriers of the second type. The body region and the source region form a first junction, the body region and the drain region form a second junction, and a conductivity of the first junction from the body region to the source region in a case that the first junction is unbiased is substantially less than a conductivity of the second junction from the body region to the drain region in a case that the second junction is unbiased.

Abstract: An embodiment is a magnetic via. More specifically, an embodiment is a magnetic via that increases the inductance of, for example, an integrated inductor or transformer while mitigating eddy currents therein that may limit the operation of the inductor or transformer at high frequency.

Abstract: An apparatus includes a magnetic core, a ground node, and one or more vias to provide a connection between the magnetic core and the ground potential. The magnetic core includes a first magnetic layer and a second magnetic layer. In addition, the apparatus may include a conductive pattern. The conductive pattern may be at a third layer between the first and second magnetic layers. The apparatus may be included in inductors, transformers, transmission lines, and other components using ferromagnetic cores or shields. Such components may be integrated on a chip or die.

Abstract: An apparatus may include a first magnetic layer, a second magnetic layer, and a conductive pattern. The conductive pattern is at a third layer between the first and second magnetic layers. Moreover, one or more magnetic vias connect the first and second magnetic layers. The magnetic layers and vias may operate as ferromagnetic cores or shields. Further they may be integrated on a chip (on-die magnetics). The apparatus may be included in inductors, transformers, transmission lines, and so forth.

Abstract: An embodiment is a magnetic via. More specifically, an embodiment is a magnetic via that increases the inductance of, for example, an integrated inductor or transformer while mitigating eddy currents therein that may limit the operation of the inductor or transformer at high frequency.

Abstract: A dynamic random access memory includes a cell having a circuit between a floating-body transistor and a bit line. Activation of the circuit is controlled to provide isolation between the floating body and bit-line voltage both during write operations and during times when the cell is unselected. The added isolation improves performance, for example, by reducing the need for gate-to-body coupling and the magnitude of voltage swings between the bit lines.

Abstract: In accordance with some embodiments, a pulse width modulator having a comparator with an applied adjustable waveform to generate a bit stream with a controllably adjustable duty cycle is provided.