Abstract: A floating point pre-alignment structure for computing-in-memory applications includes a time domain exponent computing block and an input mantissa pre-align block. The time domain exponent computing block is configured to compute a plurality of original input exponents and a plurality of original weight exponents to generate a plurality of flags. Each of the flags is determined by adding one of the original input exponents and one of the original weight exponents. The input mantissa pre-align block is configured to receive a plurality of original input mantissas and shift the original input mantissas according to the flags to generate a plurality of weighted input mantissas, and sparsity of the weighted input mantissas is greater than sparsity of the original input mantissas. Each of the flags has a negative correlation with a sum of the one of the original input exponents and the one of the original weight exponents.

Abstract: A memory unit with time domain edge delay accumulation for computing-in-memory applications is controlled by a first word line and a second word line. The memory unit includes at least one memory cell, at least one edge-delay cell multiplexor and at least one edge-delay cell. The at least one edge-delay cell includes a weight reader and a driver. The weight reader is configured to receive a weight and a multi-bit analog input voltage and generate a multi-bit voltage according to the weight and the multi-bit analog input voltage. The driver is connected to the weight reader and configured to receive an edge-input signal. The driver is configured to generate an edge-output signal having a delay time according to the edge-input signal and the multi-bit voltage. The delay time of the edge-output signal is positively correlated with the multi-bit analog input voltage multiplied by the weight.

Abstract: Embodiments of this application provide a testing apparatus, configured to test a battery and including a test body and a first door body. The test body may include an accommodating cavity for accommodating the battery, and an opening. The opening may communicate with the accommodating cavity, and the first door body may be connected to the opening and capable of moving relative to the opening. The first door body may have a first state and a second state; in the first state, the first door body may block a part of the opening; and in the second state, the first door body may seal the opening.

Abstract: The present disclosure provides a method for processing defect information of a product, which includes the following steps of: acquiring defect information on a current film layer and defect information on historical film layers; determining whether defect information exists at a target location of the historical film layer if defect information exists at a target location of the current film layer; if defect information exists for a corresponding location to the target location in at least one of the historical film layers, deleting the defect information detected at the target location in the current film layer; and if no defect information exists for the target location in any of the historical film layers, retaining the defect information detected at the target location in the current film layer.

Abstract: Disclosed herein is a method for forming an anti-microbial layer on an apparatus. Also disclosed is a method for improving the anti-bacterial properties of a titanium device coated with titanium-nitride (TiN). Also disclosed is a medical apparatus comprising an anti-microbial layer prepared by the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: Disclosed herein is a method for forming an anti-microbial layer on an apparatus. Also disclosed is a method for improving the anti-bacterial properties of a titanium device coated with titanium-nitride (TiN). Also disclosed is a medical apparatus comprising an anti-microbial layer prepared by the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer, and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: In one aspect, the disclosure relates to protective, anti-bacterial coatings for medical implants and methods of making the same. Also disclosed herein are methods for improving the anti-bacterial properties of a medical device coated with silicon carbide (SiC) or titanium nitride (TiN). Further disclosed herein are medical devices including an anti-microbial layer prepared by the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: In one aspect, the disclosure relates to protective, anti-bacterial coatings for medical implants and methods of making the same. Also disclosed herein are methods for improving the anti-bacterial properties of a medical device coated with silicon carbide (SiC) or titanium nitride (TiN). Further disclosed herein are medical devices including an anti-microbial layer prepared by the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: Various examples are provided for low cost disposable medical sensors fabricated on glass, paper or plastics, and applications thereof. In one example, a medical sensor includes a base structure comprising a functionalized sensing area; and a transistor disposed on the base structure adjacent to the functionalized sensing area. In another example, a medical sensor includes a base structure comprising a functionalized sensing area disposed on a first electrode pad and a reference sensing area disposed on a second electrode pad separated from the first electrode pad; and a transistor having a gate electrically coupled to the second electrode pad of the base structure. A gate pulse applied to the functionalized sensing can produce a drain current corresponding to an amount of a target present in a sample disposed on the base structure.

Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.

Abstract: Disclosed herein is a method for forming an anti-microbial layer on an apparatus. Also disclosed is a method for improving the anti-bacterial properties of a titanium device coated with titanium-nitride (TiN). Also disclosed is a medical apparatus comprising an anti-microbial layer prepared by the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure.

Abstract: Various examples are provided for disposable medical sensors that can be used for detection of SARS-CoV-2 antigen, cardiac troponin I, or other biosensing applications. In one example, a medical sensing system includes single-use disposable test strip comprising a functionalized sensing area configured to detect SARS-CoV-2 antigen and a portable sensing and readout device including pulse generation circuitry that can generate synchronized gate and drain pulses for detection and quantification of SARS-CoV-2 antigen in biological samples. In another example, a method includes providing a saliva sample to a functionalized sensing area configured to detect SARS-CoV-2 antigen, generating synchronized gate and drain pulses for a transistor, the gate pulse provided via electrodes of the functionalized sensing area, and sensing an output of the transistor that is a function of a concentration of SARS-CoV-2 antigen in the sample.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.

Abstract: Dental prosthetic restoration coatings made of dielectric materials, methods of fabricating the same, as well as methods of testing dental prosthetic restorations are provided. A prosthetic restoration coating can include dielectric materials such as Al2O3, ZrO2, SiNx, SiC, and SiO2. Application can take place using plasma enhanced chemical vapor deposition (PECVD) methods, and alternating materials can be used to achieve desired anticorrosive, structural integrity, hardness, adhesion, and color characteristics. A testing method can include immersing a test device in solutions of differing pH, with or without abrasive steps. The cycling can include an acidic solution and a basic solution, with an optional neutral solution. As the abrasive step, a chewing simulator can be utilized.

Abstract: Various examples are provided for disposable medical sensors that can be used for the detection of cerebral spinal fluid. In one example, a medical sensing system includes a disposable sensing unit comprising a functionalized sensing area disposed between electrodes; and a portable sensing unit analyzer including pulse generation circuitry that can generate synchronized gate and drain pulses and a transistor with a gate electrically coupled to one electrode. A gate pulse output of the pulse generation circuitry is electrically coupled to a second electrode and a drain pulse output is electrically coupled to a drain of the transistor. In another example, a method includes providing a sample to a functionalized sensing area, generating synchronized gate and drain pulses for a transistor, the gate pulse provided via the electrodes and functionalized sensing area, and sensing an output of the transistor that is a function of a target concentration of the sample.

Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.

Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.