Patents by Inventor Fan Ren

Fan Ren has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210003528
    Abstract: Various examples are provided for disposable medical sensors that can be used for detection of SARS-CoV-2 antigen, cardiac troponin I, or other biosensing applications. In one example, a medical sensing system includes single-use disposable test strip comprising a functionalized sensing area configured to detect SARS-CoV-2 antigen and a portable sensing and readout device including pulse generation circuitry that can generate synchronized gate and drain pulses for detection and quantification of SARS-CoV-2 antigen in biological samples. In another example, a method includes providing a saliva sample to a functionalized sensing area configured to detect SARS-CoV-2 antigen, generating synchronized gate and drain pulses for a transistor, the gate pulse provided via electrodes of the functionalized sensing area, and sensing an output of the transistor that is a function of a concentration of SARS-CoV-2 antigen in the sample.
    Type: Application
    Filed: September 18, 2020
    Publication date: January 7, 2021
    Inventors: Josephine F. Esquivel-Upshaw, Fan Ren, Stephen J. Pearton, Steven Craig Ghivizzani, Samira Afonso Camargo, Chaker Fares, Minghan Xian, Patrick H. Carey, Jenshan Lin, Siang-Sin Shan, Yu-Te Liao, Shao-Yung Lu
  • Publication number: 20200403121
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: September 1, 2020
    Publication date: December 24, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20200388721
    Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
    Type: Application
    Filed: August 24, 2020
    Publication date: December 10, 2020
    Inventors: Zhen CHEN, Fariba DANESH, Fan REN, Shuke YAN
  • Patent number: 10813847
    Abstract: Dental prosthetic restoration coatings made of dielectric materials, methods of fabricating the same, as well as methods of testing dental prosthetic restorations are provided. A prosthetic restoration coating can include dielectric materials such as Al2O3, ZrO2, SiNx, SiC, and SiO2. Application can take place using plasma enhanced chemical vapor deposition (PECVD) methods, and alternating materials can be used to achieve desired anticorrosive, structural integrity, hardness, adhesion, and color characteristics. A testing method can include immersing a test device in solutions of differing pH, with or without abrasive steps. The cycling can include an acidic solution and a basic solution, with an optional neutral solution. As the abrasive step, a chewing simulator can be utilized.
    Type: Grant
    Filed: October 28, 2016
    Date of Patent: October 27, 2020
    Assignee: University of Florida Research Foundation, Inc.
    Inventors: Josephine F. Esquivel-Upshaw, Fan Ren, Arthur E. Clark
  • Publication number: 20200333286
    Abstract: Various examples are provided for disposable medical sensors that can be used for the detection of cerebral spinal fluid. In one example, a medical sensing system includes a disposable sensing unit comprising a functionalized sensing area disposed between electrodes; and a portable sensing unit analyzer including pulse generation circuitry that can generate synchronized gate and drain pulses and a transistor with a gate electrically coupled to one electrode. A gate pulse output of the pulse generation circuitry is electrically coupled to a second electrode and a drain pulse output is electrically coupled to a drain of the transistor. In another example, a method includes providing a sample to a functionalized sensing area, generating synchronized gate and drain pulses for a transistor, the gate pulse provided via the electrodes and functionalized sensing area, and sensing an output of the transistor that is a function of a target concentration of the sample.
    Type: Application
    Filed: April 17, 2020
    Publication date: October 22, 2020
    Inventors: Marino Leon, Brian C. Lobo, Stephen J. Pearton, Fan Ren, Yu-Te Liao
  • Patent number: 10797202
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: December 12, 2019
    Date of Patent: October 6, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10770620
    Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
    Type: Grant
    Filed: May 6, 2019
    Date of Patent: September 8, 2020
    Assignee: GLO AB
    Inventors: Zhen Chen, Fariba Danesh, Fan Ren, Shuke Yan
  • Publication number: 20200119229
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: December 12, 2019
    Publication date: April 16, 2020
    Inventors: Fariba Danesh, Richard P. Schneider, JR., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10566499
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: February 18, 2020
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20190386173
    Abstract: A light emitting diode includes a n-doped region, a p-doped region, and a light emitting region located between the n-doped region and a p-doped region. The n-doped region includes a first GaN layer, at least one n-doped second GaN layer located over the first GaN layer, an AlGaN dislocation blocking layer located over the at least one n-doped second GaN layer, and a n-doped third GaN layer located over the AlGaN dislocation blocking film.
    Type: Application
    Filed: May 6, 2019
    Publication date: December 19, 2019
    Inventors: Zhen CHEN, Fariba DANESH, Fan REN, Shuke YAN
  • Patent number: 10504811
    Abstract: Materials and methods for improving the DC and RF performance of off-state step-stressed high electron mobility transistors (HEMTs) and devices are provided. A semiconductor device can include at least one HEMT and an on-chip heating source. A method of recovering the DC and RF performance of a stressed semiconductor device can include annealing the device with a built-in heating source of the device.
    Type: Grant
    Filed: March 25, 2016
    Date of Patent: December 10, 2019
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Fan Ren, Stephen J. Pearton
  • Patent number: 10488364
    Abstract: Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).
    Type: Grant
    Filed: April 26, 2018
    Date of Patent: November 26, 2019
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED
    Inventors: Soohwan Jang, Fan Ren, Stephen J. Pearton
  • Publication number: 20190341525
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer. and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Application
    Filed: July 16, 2019
    Publication date: November 7, 2019
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Patent number: 10361341
    Abstract: A red-light emitting diode includes an n-doped portion, a p-doped portion, and a light emitting region located between the n-doped portion and a p-doped portion. The light emitting region includes a light-emitting indium gallium nitride layer emitting light at a peak wavelength between 600 and 750 nm under electrical bias thereacross, an aluminum gallium nitride layer located on the light-emitting indium gallium nitride layer and a GaN barrier layer located on the aluminum gallium nitride layer.
    Type: Grant
    Filed: October 18, 2017
    Date of Patent: July 23, 2019
    Assignee: GLO AB
    Inventors: Fariba Danesh, Richard P. Schneider, Jr., Fan Ren, Michael Jansen, Nathan Gardner
  • Publication number: 20190170738
    Abstract: Various examples are provided for low cost disposable medical sensors fabricated on glass, paper or plastics, and applications thereof. In one example, a medical sensor includes a base structure comprising a functionalized sensing area; and a transistor disposed on the base structure adjacent to the functionalized sensing area. In another example, a medical sensor includes a base structure comprising a functionalized sensing area disposed on a first electrode pad and a reference sensing area disposed on a second electrode pad separated from the first electrode pad; and a transistor having a gate electrically coupled to the second electrode pad of the base structure. A gate pulse applied to the functionalized sensing can produce a drain current corresponding to an amount of a target present in a sample disposed on the base structure.
    Type: Application
    Filed: November 30, 2018
    Publication date: June 6, 2019
    Inventors: Fan Ren, Stephen J. Pearton
  • Patent number: 10312358
    Abstract: III-nitride based high electron mobility transistors (HEMTs), such as AlGaN/GaN HEMTs on Silicon substrates, with improved heat dissipation are described herein. A semiconductor device having improved heat dissipation may include a substrate having a top surface and a bottom surface, a nucleation layer on the top surface of the substrate, a transition layer on the nucleation layer, a buffer layer on the transition layer, a barrier layer on the buffer layer, and a metal layer filling a via hole that extends from the bottom surface of the substrate to a bottom surface of the transition layer.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: June 4, 2019
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INCORPORATED
    Inventors: Fan Ren, Stephen John Pearton, Mark E. Law, Ya-Hsi Hwang
  • Patent number: 10269989
    Abstract: A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: April 23, 2019
    Assignee: University of Florida Research Foundation, Incorporated
    Inventors: Fan Ren, Stephen J. Pearton, Soohwan Jang, Sunwoo Jung
  • Publication number: 20180325780
    Abstract: Dental prosthetic restoration coatings made of dielectric materials, methods of fabricating the same, as well as methods of testing dental prosthetic restorations are provided. A prosthetic restoration coating can include dielectric materials such as Al2O3, ZrO2, SiNx, SiC, and SiO2. Application can take place using plasma enhanced chemical vapor deposition (PECVD) methods, and alternating materials can be used to achieve desired anticorrosive, structural integrity, hardness, adhesion, and color characteristics. A testing method can include immersing a test device in solutions of differing pH, with or without abrasive steps. The cycling can include an acidic solution and a basic solution, with an optional neutral solution. As the abrasive step, a chewing simulator can be utilized.
    Type: Application
    Filed: October 28, 2016
    Publication date: November 15, 2018
    Inventors: JOSEPHINE F. ESQUIVEL-UPSHAW, FAN REN, ARTHUR E. CLARK
  • Publication number: 20180313785
    Abstract: Methods and apparatuses for detecting ammonia are disclosed. A sensor can include a transistor having a gate, a drain, and a source. A layer of ammonia detecting material can be functionally attached to the transistor. The ammonia detecting material can be zinc oxide (ZnO) nanorods, which effectively functionalize the transistor by changing the amount of current that flows through the gate when a voltage is applied. Alternatively, or in addition to ZnO nanorods, films or nanostructure type metal oxides including TiO2, ITO, ZnO, WO3 and AZO can be used. The transistor is preferably a high electron mobility transistor (HEMT).
    Type: Application
    Filed: April 26, 2018
    Publication date: November 1, 2018
    Inventors: Soohwan Jang, Fan Ren, Stephen J. Pearton
  • Patent number: 10067129
    Abstract: Embodiments of the present Invention provide antibody functionalized high electron mobility transistor (HEMT) devices for marine or freshwater pathogen sensing. In one embodiment, the marine pathogen can be Perkinsus marinus. A sensing unit can include a wireless transmitter fabricated on the HEMT. The sensing unit allows testing in areas without direct access to electrical outlets and can send the testing results to a central location using the wireless transmitter. According to embodiments, results of testing can be achieved within seconds.
    Type: Grant
    Filed: May 6, 2010
    Date of Patent: September 4, 2018
    Assignee: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.
    Inventors: Barbara Jane Sheppard, Yu-Lin Wang, Fan Ren, Stephen John Pearton