Abstract: Embodiments are directed to a series of novel EPAC antagonists that are designed, synthesized and evaluated in an effort to develop diversified analogues based on the scaffold of the previously identified high-throughput (HTS) hit ESI-09.

Abstract: Embodiments are directed to a series of novel EPAC antagonists that are designed, synthesized and evaluated in an effort to develop diversified analogues based on the scaffold of the previously identified high-throughput (HTS) hit ESI-09.

Abstract: A photovoltaic device includes a substrate, a semiconductor stack and a transparent tunnel junction. The semiconductor stack includes an n-type layer selected from a first transparent conductive oxide layer, or a window layer, or both; and a p-type absorber layer disposed on the n-type layer, wherein the absorber layer consists essentially of CdSexTe(1-x), wherein x is from 1 to about 40 at. %. The transparent tunnel junction comprises a transparent interface layer of CdyZn(1-y)Te doped to be p+type, and a transparent contact layer doped to be n+type, and the interface layer is disposed between the p-type absorber layer and the transparent contact layer. In bifacial embodiments, the tunnel junction forms a transparent back contact and electrode; and in multi-junction embodiments, the tunnel junction forms a diode-like connector between top and bottom cells. The transparent contact layer may comprise tin oxide or zinc oxide doped with aluminum, fluorine or indium.

Abstract: Certain embodiments are directed to methods of treating pain, e.g., chronic or neuropathic pain, comprising administering an effective amount of an EPAC inhibitor.

Abstract: Embodiments of the invention are directed to compounds that inhibit an activity of EP AC proteins and methods of using the same. The inventors have developed a sensitive and robust high throughput screening (HTS) assay for the purpose of identifying EPAC specific inhibitors (Tsalkova et al. (2012) PLOS ONE 7(1):e30441).

Abstract: Certain embodiments are directed to methods of treating pain, e.g., chronic or neuropathic pain, comprising administering an effective amount of an EPAC inhibitor.

Abstract: Embodiments of the invention are directed to compounds that inhibit an activity of EP AC proteins and methods of using the same. The inventors have developed a sensitive and robust high throughput screening (HTS) assay for the purpose of identifying EPAC specific inhibitors (Tsalkova et al. (2012) PLOS ONE 7 (1):e30441).

Abstract: The present invention provides new antiviral compounds and pharmacological compositions comprising these new compounds and their use in the prophylaxis, prevention and treatment of viral infections, particularly adenovirus and herpes virus infections.

Abstract: Embodiments of the invention are directed to compounds that inhibit an activity of EPAC proteins and methods of using the same.

Abstract: The present invention provides new antiviral compounds and pharmacological compositions comprising these new compounds and their use in the prophylaxis, prevention and treatment of viral infections, particularly adenovirus and herpes virus infections.

Abstract: An electrostatic discharge protection circuit is used in an integrated circuit with a first sub-circuit working with a first working voltage source and a second sub-circuit working with a second working voltage source lower than the first working voltage source. The electrostatic discharge protection circuit includes a first metal-oxide-semiconductor transistor of a first conductive type, having a drain thereof electrically connected to a pad of the integrated circuit, and gate, source and bulk thereof electrically connected to a bulk voltage; and a guard ring of the first conductive type, surrounding the first metal-oxide-semiconductor transistor of the first conductive type and coupled to the second working voltage source.

Abstract: A CMOS structure includes a PMOS portion and an NMOS portion isolated from each other via a P-well region disposed next to the PMOS portion and an N-well region disposed between the P-well region and the NMOS portion, an insulation layer overlying at least the N-well region, and a pad structure disposed over the N-well region. The pad structure further includes: a pad body disposed on the insulation layer; and at least one contact plug penetrating through the insulation layer, having one end coupled to the pad body and the other end coupled to a contact zone in the N-well region; wherein the contact zone is interfaced with the N-well region with P-type dopants.

Abstract: An ESD protection device is described, which includes a P-body region, a P-type doped region, an N-type doped region and an N-sinker region. The P-body region is configured in a substrate. The P-type doped region is configured in the middle of the P-body region. The N-type doped region is configured in the P-body region and surrounds the P-type doped region. The N-sinker region is configured in the substrate and surrounds the P-body region.

Abstract: The present disclosure relates to methods and related cleaning solutions (116) for cleaning a glass substrate (10, 112), such as for removing metal ion contaminates from a glass substrate (10, 112) having a transparent conductive oxide layer (12). One method includes: providing a glass substrate (10, 112) having a transparent conductive oxide (TCO) layer (12); and exposing the glass substrate (10, 112) to a cleaning solution (116) that includes 0.5% to 5% organic acid, wherein the organic acid used includes citric acid, acetic acid, or oxalic acid.

Abstract: The Complementary Metal-Oxide Semiconductor (CMOS) transistor of the present invention includes deep halo doped regions in the substrate. The fabrication of the deep halo doped regions is integrated into the process of making the lightly doped drains or the source/drain doped regions, and therefore no extra mask is required.

Abstract: The present invention concerns the field of gene therapy and in particular the use of specific adenoviral vector systems for gene therapy, said vector systems offering enhanced efficiency and specificity for gene delivery. More specifically, the present invention provides replicating-competent adenoviral vector systems carrying one or more inserted heterologous gene. The adenoviral vectors system according to the invention are characterized by high binding efficiency and infectivity to cells of neural origin, endothelial cells, carcinoma cells and dendritic cells.

Abstract: The present invention generally relates to a system that can be used to form a photovoltaic device, or solar cell, using processing modules that are adapted to perform one or more steps in the solar cell formation process. The automated solar cell fab is generally an arrangement of automated processing modules and automation equipment that is used to form solar cell devices. The automated solar fab will thus generally comprise a substrate receiving module that is adapted to receive a substrate, one or more absorbing layer deposition cluster tools having at least one processing chamber that is adapted to deposit a silicon-containing layer on a surface of the substrate, one or more back contact deposition chambers, one or more material removal chambers, a solar cell encapsulation device, an autoclave module, an automated junction box attaching module, and one or more quality assurance modules that are adapted to test and qualify the completely formed solar cell device.

Abstract: A CMOS structure includes a PMOS portion and an NMOS portion isolated from each other via a P-well region disposed next to the PMOS portion and an N-well region disposed between the P-well region and the NMOS portion, an insulation layer overlying at least the N-well region, and a pad structure disposed over the N-well region. The pad structure further includes: a pad body disposed on the insulation layer; and at least one contact plug penetrating through the insulation layer, having one end coupled to the pad body and the other end coupled to a contact zone in the N-well region; wherein the contact zone is interfaced with the N-well region with P-type dopants.