Abstract: Brightness values of image frames are collected and counted to form a brightness distribution. The brightness distribution of the image frames is compared with predetermined brightness distributions. Brightness values of all pixels of successive image frames are adjusted according to a result of the comparison, so as to improve image contrast.

Abstract: A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on the substrate, reducing oxide formation on the capping layer, and then depositing a dielectric material. A method and apparatus for processing a semiconductor substrate including depositing a capping layer upon a conductive material formed on a substrate, exposing the capping layer to a plasma, heating the substrate to more than about 100° C., and depositing a low dielectric constant material.

Abstract: The present invention generally provides an apparatus and method of processing substrates to uniformly remove any residual contamination from the surface of a substrate by use of an appropriate cleaning chemistry and contact with a cleaning medium. In one embodiment, the cleaning medium, such as is a brush or a scrubbing component that is positioned in a cleaning module. In one embodiment, the process of cleaning the surface of a substrate W is completed by “scrubbing” the surface of the substrate while using a cleaning solution that is selected to chemically etch a material from the surface of the substrate. In one aspect, the amount of material removed from the surface of a substrate is only about 10-30 Angstroms (?). In one embodiment, the substrate surface is cleaned by use of a scrubbing process that uses a fluid that doesn't react with the exposed materials on the surface of the substrate.

Abstract: The invention provides an ESD protection structure, compatible with the bipolar-CMOS-DMOS (BCD) processes, which provides an enhanced protection performance and better heat dissipation performance. The design of the ESD structures in present invention takes advantage of bipolar punch characteristics of the parasitic bipolar structure to bypass the ESD current, thus significantly reducing the trigger voltage and increasing the ESD protection level. In addition, the ESD protection circuit of the present invention can improve heat dissipation by avoid current crowding near the surface.

Abstract: The invention provides an ESD protection structure, compatible with the bipolar-CMOS-DMOS (BCD) processes, which provides an enhanced protection performance and better heat dissipation performance. The design of the ESD structures in present invention takes advantage of bipolar punch characteristics of the parasitic bipolar structure to bypass the ESD current, thus significantly reducing the trigger voltage and increasing the ESD protection level. In addition, the ESD protection circuit of the present invention can improve heat dissipation by avoid current crowding near the surface.

Abstract: Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and/or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and/or ALD deposition process.

Abstract: This invention relates generally to the field of prognosis and diagnosis of vasculopathy and certain tumors. In particular, the invention provides a method for prognosing or diagnosing vasculopathy, neuroectodermal tumor, epithelial tumor, myelomonocytic tumor or lymphoid tumor in a mammal. The invention can also be used for monitoring the effectiveness of the treatment of the vasculopathy, neuroectodermal tumor, epithelial tumor, lymphoid tumor or myelomonocytic tumor.

Abstract: This invention relates generally to the field of prognosis and diagnosis of vasculopathy and certain tumors.

Abstract: An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well in the P-epitaxial layer and encompassing the P-well, an N-Buried Layer (NBL) underneath the P-well and bordering the N-well. The P-well is fully isolated by the N-well and the NBL. The NMOS device further includes a first isolation structure consisting of a gate-insulating layer connected with a field oxide layer, which is formed on the P-epitaxial layer. A gate overlies the first isolation structure. A second isolation structure laterally spaced apart from the first isolation structure is approximately situated on the N-well. An N+ source doping region, which functions as a source of the NMOS device, is disposed in the P-well. An N+ drain doping region, which functions as a drain of the NMOS device, is disposed in the N-well.

Abstract: An adaptable door mirror of an automobile includes a frame, an attachment element, and a bracket. The frame includes a lens fitted therein, a well facing a body of the automobile, and a threaded fastener extended from the well. The attachment element is optional and includes a recess facing the well and a transverse channel in communication with the recess. The bracket is mounted on the body of the automobile and includes a threaded hole facing the attachment element and a cavity in communication with the threaded hole. The fastener either extends through the channel and is threaded in the threaded hole or is threaded in the threaded hole and into the cavity to be secured by a nut. The cost of replacing a malfunctioned door mirror can be saved since, for example, only a replacement of the bracket of the door mirror is sufficient if both the frame and the attachment element are still good for use.

Abstract: In one embodiment, a method for activating a metal layer prior to depositing a cobalt-containing capping layer is provided which includes exposing the metal layer to an electroless activation solution to deposit a palladium layer on the metal layer and depositing the cobalt-containing capping layer on the palladium layer. The electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, nitric acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water. In another embodiment, the electroless activation solution contains palladium nitrate at a concentration in a range from about 0.01 mM to about 1.0 mM, methanesulfonic acid at a concentration in a range from about 0.01 mM to about 3.0 mM and water.

Abstract: An NMOS device having protection against electrostatic discharge. The NMOS device includes a P-substrate, a P-epitaxial layer overlying the P-substrate, a P-well in the P-epitaxial layer, an N-well in the P-epitaxial layer and encompassing the P-well, an N-Buried Layer (NBL) underneath the P-well and bordering the N-well. The P-well is fully isolated by the N-well and the NBL. The NMOS device further includes a first isolation structure consisting of a gate-insulating layer connected with a field oxide layer, which is formed on the P-epitaxial layer. A gate overlies the first isolation structure. A second isolation structure laterally spaced apart from the first isolation structure is approximately situated on the N-well. An N+ source doping region, which functions as a source of the NMOS device, is disposed in the P-well. An N+ drain doping region, which functions as a drain of the NMOS device, is disposed in the N-well.

Abstract: Adenovirus types 11p and 4p show a higher binding affinity and infectivity than type 5 for endothelial and carcinoma cell lines. Adenovirus type 11p shows a stronger binding to cells for neural origin, such as glioblastoma, neuroblastoma and medulloblastoma. The fact that adenovirus type 11 has a comparatively low prevalence in society, together with its high affinity and infectivity, makes it very suitable for use in gene therapy.

Abstract: A lamp for the rearview mirror of a vehicle includes a transparent lamp shade fitted in the through hole bored in the outer wall of a rearview mirror shell, a lamp installed in the inner hollow of the transparent lamp shade and a support member screwed together with the transparent lamp shade. Any rearview mirror shells of different shapes can be bored with a through hole of an identical diameter for the transparent lampshade and the lamp to be fitted therein. Besides, the transparent lampshade and the support member are respectively formed with a threaded portion to be screwed together and be firmly assembled with the rearview mirror shell, regardless of thickness of the rearview mirror shell.

Abstract: This invention relates generally to the field of prognosis and diagnosis of vasculopathy and certain tumors.