Abstract: Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with liner material and have segments of semiconductor material exposed along lower regions. Semiconductor material is isotropically etched through the exposed segments which transforms the recesses into openings having wide lower regions beneath narrow upper regions. Gate dielectric material is formed along sidewalls of the openings. Gate material is formed within the openings and over regions of the semiconductor material between the openings. Insulative material is formed down the center of each opening and entirely through the gate material. A segment of gate material extends from one of the openings to the other, and wraps around a pillar of the semiconductor material between the openings. The segment is a gate of a transistor. Source/drain regions are formed on opposing sides of the gate.

Abstract: Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with liner material and have segments of semiconductor material exposed along lower regions. Semiconductor material is isotropically etched through the exposed segments which transforms the recesses into openings having wide lower regions beneath narrow upper regions. Gate dielectric material is formed along sidewalls of the openings. Gate material is formed within the openings and over regions of the semiconductor material between the openings. Insulative material is formed down the center of each opening and entirely through the gate material. A segment of gate material extends from one of the openings to the other, and wraps around a pillar of the semiconductor material between the openings. The segment is a gate of a transistor. Source/drain regions are formed on opposing sides of the gate.

Abstract: Some embodiments include methods of forming silicon dioxide in which silicon dioxide is formed across silicon utilizing a first treatment temperature of no greater than about 1000° C., and in which an interface between the silicon dioxide and the silicon is annealed utilizing a second treatment temperature which is at least about 1050° C. Some embodiments include methods of forming transistors in which a trench is formed to extend into monocrystalline silicon. Silicon dioxide is formed along multiple crystallographic planes along an interior of the trench utilizing a first treatment temperature of no greater than about 1000° C., and an interface between the silicon dioxide and the monocrystalline silicon is annealed utilizing a second treatment temperature which is at least about 1050° C. A transistor gate is formed within the trench, and a pair of source/drain regions is formed within the monocrystalline silicon adjacent the transistor gate. Some embodiments include DRAM cells.

Abstract: Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with liner material and have segments of semiconductor material exposed along lower regions. Semiconductor material is isotropically etched through the exposed segments which transforms the recesses into openings having wide lower regions beneath narrow upper regions. Gate dielectric material is formed along sidewalls of the openings. Gate material is formed within the openings and over regions of the semiconductor material between the openings. Insulative material is formed down the center of each opening and entirely through the gate material. A segment of gate material extends from one of the openings to the other, and wraps around a pillar of the semiconductor material between the openings. The segment is a gate of a transistor. Source/drain regions are formed on opposing sides of the gate.

Abstract: Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with liner material and have segments of semiconductor material exposed along lower regions. Semiconductor material is isotropically etched through the exposed segments which transforms the recesses into openings having wide lower regions beneath narrow upper regions. Gate dielectric material is formed along sidewalls of the openings. Gate material is formed within the openings and over regions of the semiconductor material between the openings. Insulative material is formed down the center of each opening and entirely through the gate material. A segment of gate material extends from one of the openings to the other, and wraps around a pillar of the semiconductor material between the openings. The segment is a gate of a transistor. Source/drain regions are formed on opposing sides of the gate.

Abstract: Some embodiments include methods of forming silicon dioxide in which silicon dioxide is formed across silicon utilizing a first treatment temperature of no greater than about 1000° C., and in which an interface between the silicon dioxide and the silicon is annealed utilizing a second treatment temperature which is at least about 1050° C. Some embodiments include methods of forming transistors in which a trench is formed to extend into monocrystalline silicon. Silicon dioxide is formed along multiple crystallographic planes along an interior of the trench utilizing a first treatment temperature of no greater than about 1000° C., and an interface between the silicon dioxide and the monocrystalline silicon is annealed utilizing a second treatment temperature which is at least about 1050° C. A transistor gate is formed within the trench, and a pair of source/drain regions is formed within the monocrystalline silicon adjacent the transistor gate. Some embodiments include DRAM cells.

Abstract: Some embodiments include methods of forming silicon dioxide in which silicon dioxide is formed across silicon utilizing a first treatment temperature of no greater than about 1000° C., and in which an interface between the silicon dioxide and the silicon is annealed utilizing a second treatment temperature which is at least about 1050° C. Some embodiments include methods of forming transistors in which a trench is formed to extend into monocrystalline silicon. Silicon dioxide is formed along multiple crystallographic planes along an interior of the trench utilizing a first treatment temperature of no greater than about 1000° C., and an interface between the silicon dioxide and the monocrystalline silicon is annealed utilizing a second treatment temperature which is at least about 1050° C. A transistor gate is formed within the trench, and a pair of source/drain regions is formed within the monocrystalline silicon adjacent the transistor gate. Some embodiments include DRAM cells.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: A double blanket ion implant method for forming diffulsion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffulsion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: A method used during the formation of a semiconductor device reduces ion channeling during implantation of the wafer. The method comprises providing a semiconductor wafer and an unetched transistor gate stack assembly over the wafer. The unetched transistor gate stack assembly comprises a gate oxide layer, a control gate layer, a metal layer, and a dielectric capping layer. A patterned photoresist layer is formed over the unetched transistor gate stack assembly, then each of the capping layer, the metal layer, the control gate layer, and the gate oxide layer is etched to form a plurality of laterally-spaced transistor gate stacks. A screening layer is formed overlying the semiconductor wafer between the transistor gate stacks. A dopant is implanted into the semiconductor wafer through the screening layer, then the screening layer is removed.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: A method used during the formation of a semiconductor device reduces ion channeling during implantation of the wafer. The method comprises providing a semiconductor wafer and an unetched transistor gate stack assembly over the wafer. The unetched transistor gate stack assembly comprises a gate oxide layer, a control gate layer, a metal layer, and a dielectric capping layer. A patterned photoresist layer is formed over the unetched transistor gate stack assembly, then each of the capping layer, the metal layer, the control gate layer, and the gate oxide layer is etched to form a plurality of laterally-spaced transistor gate stacks. A screening layer is formed overlying the semiconductor wafer between the transistor gate stacks. A dopant is implanted into the semiconductor wafer through the screening layer, then the screening layer is removed.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface. Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface. Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: A double blanket ion implant method for forming diffusion regions in memory array devices, such as a MOSFET access device is disclosed. The method provides a semiconductor substrate with a gate structure formed on its surface Next, a first pair of diffusion regions are formed in a region adjacent to the channel region by a first blanket ion implantation process. The first blanket ion implantation process has a first energy level and dose. The device is subjected to oxidizing conditions, which form oxidized sidewalls on the gate structure. A second blanket ion implantation process is conducted at the same location as the first ion implantation process adding additional dopant to the diffusion regions. The second blanket ion implantation process has a second energy level and dose. The resultant diffusion regions provide the device with improved static refresh performance over prior art devices.

Abstract: An SRAM memory cell is provided in which a pair of cross-coupled n-type MOS pull-down transistors are coupled to respective parasitically formed bipolar pull-up transistors. The memory cell is formed within a semiconductor layer which extends over a buried layer. The bipolar transistors are formed parasitically from the buried layer and the semiconductor layer used to form the pull-down transistors. The bases of the bipolar transistors may also be dynamically controlled. An SRAM memory array having a plurality of such memory cells and a computer system incorporating the SRAM memory array are also provided.

Abstract: A method of implanting dopants within an exposed first active region on a semiconductor substrate of a semiconductor wafer without doping an exposed second active region of the semiconductor substrate. A barrier wall is formed adjacent to the second active region and projects from the semiconductor substrate to a height above the second active region. A minimal angle relative to an axis perpendicular to the semiconductor substrate is determined at which doping ions directed at the semiconductor substrate must travel so that the barrier wall blocks the doping ions from contacting the second active region. The doping ions are used to bombard the semiconductor substrate at an angle at least as large as the minimal angle previously determined. As a result, the doping ions contact the first active region but do not substantially contact the second active region. The width of the second active region can be formed as greater than that of the first active.

Abstract: An SRAM memory cell is provided in which a pair of cross-coupled n-type MOS pull-down transistors are coupled to respective parasitically formed bipolar pull-up transistors. The memory cell is formed within a semiconductor layer which extends over a buried layer. The bipolar transistors are formed parasitically from the buried layer and the semiconductor layer used to form the pull-down transistors. The bases of the bipolar transistors may also be dynamically controlled. An SRAM memory array having a plurality of such memory cells and a computer system incorporating the SRAM memory array are also provided.