Abstract: Metalenses and technologies incorporating the same are disclosed. In some embodiments, the metalenses are in the form of a hybrid multiregion collimating metalens that includes a first region and a second region, wherein the hybrid multiregion collimating metalens is configured to collimate (e.g., visible) light incident thereon. In some instances the first region includes an array of first unit cells that contain subwavelength spaced nanostructures, such that the first region functions as a subwavelength high contrast grating (SWHCG), whereas the second region includes an array of second unit cell, wherein the array of second unit cells includes a near periodic annular arrangement of nanostructures such that the second region approximates the functionality of a locally periodic radial diffraction grating. Lighting devices including such metalenses are also disclosed.

Abstract: A laser source based on a quantum cascade laser array (QCL), wherein the outputs of at least two elements in the array are collimated and overlapped in the far field using an external diffraction grating and a transform lens.

Abstract: A spectral encoder includes a thin layer of lossy dielectric material whose thickness varies transversely from 0 to a thickness of about ?/4n (e.g., <100 nm), where ? is the wavelength of incident radiation and n is the dielectric material's refractive index. The dielectric layer reflects (and/or transmits) light at a wavelength that depends on the layer's thickness. Because the dielectric layer's thickness varies, different parts of the dielectric layer may reflect (transmit) light at different wavelengths. For instance, shining white light on a dielectric layer with a linearly varying thickness may produce a rainbow-like reflected (and/or transmitted) beam. Thus, the spectral encoder maps different wavelengths to different points in space. This mapping can be characterized by a transfer matrix which can be used to determine the spectrum of radiation incident on the spectral encoder from the spatial intensity distribution of the radiation reflected (and/or transmitted) by the spectral encoder.

Abstract: An optical plate includes a substrate and a resonator structure formed on or in the substrate, wherein the resonator structure is configured to produce an abrupt change in phase, amplitude and/or polarization of incident radiation.

Abstract: A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.

Abstract: The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).

Abstract: A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.

Abstract: laser devices described may emit a beam of electromagnetic radiation having a large wavelength (e.g., mid-infrared, far-infrared) and exhibiting a low angle of divergence. In some embodiments, the wavelength of the electromagnetic radiation is between 3 microns and 500 microns and the divergence angel is less than 15 degrees. Electromagnetic waves may be produced from a single monolithic laser device which includes a laser waveguide (e.g., quantum cascade laser waveguide) and a collimating element having at least one indented region (e.g., a plurality of periodically disposed grooved structures). A portion of the electromagnetic radiation may propagate as surface waves (e.g., surface plasmons) along the surface of the collimating element where indented regions in the collimating element may decrease the propagation velocity of the surface waves. A portion of the electromagnetic radiation may also be substantially convinced within a grooved structure of the collimating element (e.g., as channel polaritons).

Abstract: A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.

Abstract: A broadband quantum cascade laser (QCL) source includes one or more QCLs having an active region designed based on a diagonal laser transition. The QCL source may include multiple QCLs formed in an array or the QCL source may comprise a single QCL device. Although each QCL provides an emission spectrum comprising a small range of wavelengths at a given applied voltage, changes in the applied operating voltage result in changes in the emission spectrum of the QCL due to the Stark shift. When the QCL source comprises a plurality of QCLs formed in an array, at least some of the elements in the array may receive different applied operating voltages such that the combined output spectrum of the array is broader than that achievable by a single QCL.

Abstract: An optical plate includes a substrate and a resonator structure formed on or in the substrate, wherein the resonator structure is configured to produce an abrupt change in phase, amplitude and/or polarization of incident radiation.

Abstract: A broadband quantum cascade laser includes multiple gain regions and a spacer layer disposed between at least two of the gain regions. The arrangement and characteristics of the gain regions and the spacer layer may be configured to reduce cross absorption between the gain regions. For example, one gain region may be configured to produce gain in an energy range in which another gain region produces absorptive effects. The thickness of the spacer layer may be selected to separate optical modes produced by adjacent gain regions while still producing a single broadband output from the quantum cascade laser. Gain competition between gain stages within a gain region may be mitigated by dividing gain stages with overlapping gain curves among multiple gain regions.

Abstract: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.

Abstract: An apparatus for collimating radiation can include an aperture of subwavelength dimensions and a neighboring set of grooves defined on a metal film integrated with an active or passive device that emits radiation. Integration of the beam collimator onto the facet of a laser or other radiation-emitting device provides for beam collimation and polarization selection. Beam divergence can be reduced by more than one order of magnitude compared with the output of a conventional laser. An active beam collimator with an aperture-groove structure can be integrated with a wide range of optical devices, such as semiconductor lasers (e.g., quantum cascade lasers), light emitting diodes, optical fibers, and fiber lasers.

Abstract: A laser source based on a quantum cascade laser array (QCL), wherein the outputs of at least two elements in the array are collimated and overlapped in the far field using an external diffraction grating and a transform lens.

Abstract: A radiation-emitting device (e.g., a laser) includes an active region configured to generate a radiation emission linearly polarized along a first polarization direction and a device facet covered by an insulating layer and a metal layer on the insulating layer. The metal layer defines an aperture through which the radiation emission from the active region can be transmitted and coupled into surface plasmons on the outer side of the metal layer. The long axis of the aperture is non-orthogonal to the first polarization direction, and a sequential series of features are defined in or on the device facet or in the metal layer and spaced apart from the aperture, wherein the series of features are configured to manipulate the surface plasmons and to scatter surface plasmons into the far field with a second polarization direction distinct from the first polarization direction.

Abstract: Methods and apparatus for improved single-mode selection in a quantum cascade laser. In one example, a distributed feedback grating incorporates both index-coupling and loss-coupling components. The loss-coupling component facilitates selection of one mode from two possible emission modes by periodically incorporating a thin layer of “lossy” semiconductor material on top of the active region to introduce a sufficiently large loss difference between the two modes. The lossy layer is doped to a level sufficient to induce considerable free-carrier absorption losses for one of the two modes while allowing sufficient gain for the other of the two modes. In alternative implementations, the highly-doped layer may be replaced by other low-dimensional structures such as quantum wells, quantum wires, and quantum dots with significant engineered intraband absorption to selectively increase the free-carrier absorption losses for one of multiple possible modes so as to facilitate single-mode operation.

Abstract: Apparatus and methods for generating radiation via difference frequency generation (DFG). In one exemplary implementation, a quantum cascade laser (QCL) has a significant second-order nonlinear susceptibility (?(2)) integrated in an active region of the QCL. The QCL is configured to generate first radiation at a first frequency ?1, second radiation at a second frequency ?2, and third radiation at a third frequency ?3=?1??2 based on difference frequency generation (DFG) arising from the nonlinear susceptibility. In one aspect, the QCL may be configured to generate appreciable THz radiation at room temperature.

Abstract: A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1?) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1? overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1? do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1?, and 1?) for a transition down from level 2. Each of the levels 1, 1?, and 1? has a non-uniform squared wave function distribution.

Abstract: The present invention provides a photodiode comprising a p-i-n or pn junction at least partly formed by first and second regions (2) made of semiconductor materials having opposite conductivity type, wherein the p-i-n or pn junction comprises a light absorption region (11) for generation of charge carriers from absorbed light. One section of the p-i-n or pn junction is comprises by one or more nanowires (7) that are spaced apart and arranged to collect charge carriers generated in the light absorption region (11). At least one low doped region (10) made of a low doped or intrinsic semiconductor material provided between the nanowires (7) and one of said first region (1) and said second region (2) enables custom made light absorption region and/or avalanche multiplication region of the active region (9).