Abstract: The application provides a silicon-based lithium storage material and a preparation method thereof, wherein the silicon-based lithium storage material includes: an inner core, including silicon elements with a valence of 0-4; a first shell layer coating or partially coating the inner core, the first shell layer comprises a fluorocarbon layer, and the fluorocarbon layer comprises a fluorocarbon. According to the technical scheme of the present application, the silicon-based lithium storage material may improve the characteristics of the silicon-based lithium storage material as an active material of a lithium ion secondary battery under high-temperature storage conditions, and simultaneously improve the cycle characteristics and initial charge-discharge coulombic efficiency of the secondary battery.

Abstract: A circuit board assembly is applied to the field of electronic communications technologies to resolve a prior-art heat dissipation problem of a circuit board. The circuit board assembly combines, on a second circuit board, low-speed signals transmitted between a plurality of I/O modules and an IC chip, and then transmits the combined low-speed signals to the IC chip by using a low-speed cable. A low-speed signal sent by the IC chip to the plurality of I/O modules is extended to a plurality of low-speed signals on the second circuit board, and then the plurality of low-speed signals are separately sent to the plurality of I/O modules. This may be applied to a scenario in which a relatively large quantity of electronic components need to be disposed on a circuit board.

Abstract: A semiconductor device has a semiconductor material in a substrate. The semiconductor device has an MOS transistor. A trench in the substrate extends from a top surface of the substrate) into the semiconductor material. A shield is disposed in the trench. The shield has a contact portion which extends toward a top surface of the trench. A gate of the MOS transistor is disposed in the trench over the shield. The gate is electrically isolated from the shield. The gate is electrically isolated from the contact portion of the shield by a shield isolation layer which covers an angled surface of the contact portion extending toward the top of the trench. Methods of forming the semiconductor device are disclosed.

Abstract: An engine piston is provided. A first sealing structure, including a first sealing rubber ring and a first annular groove, is provided at a head of the engine piston. The first sealing rubber ring has a U-shaped section with a reserved space at the top of the first sealing rubber ring, and a gap for circulating hydraulic oil is provided between a ring bank, above the first sealing rubber ring, of the engine piston and a simulated cylinder liner of a fatigue testing apparatus for an engine piston. In a case that the hydraulic oil is introduced into the fatigue testing apparatus for the engine piston to simulate pressure loading under a high-explosion pressure, when the hydraulic oil enters into the reserved space from the gap for circulating the hydraulic oil, an inner wall of the reserved space is squeezed and the first sealing rubber ring is deformed.

Abstract: An immunoadsorbent and a composite affinity column for purifying fumonisin B1, anguidin, T-2 toxin, zearalenone, and vomitoxin. The immunoadsorbent includes a solid phase carrier, and a fumonisin B1 monoclonal antibody, an anguidin monoclonal antibody, a T-2 toxin monoclonal antibody, a zearalenone monoclonal antibody and a vomitoxin monoclonal antibody which are coupled to the solid phase carrier, the anguidin monoclonal antibody is a monoclonal antibody secreted by a hybridoma cell strain DAS5G11E7 having an accession number of CCTCCNO:C201881. The affinity column can be used for high performance liquid chromatography-mass spectrometry detection of the fumonisin B1, the anguidin, the T-2 toxin, the zearalenone and the vomitoxin, and has stable performance. Furthermore, an economical, quick, precise and safe detection method is established of the basis of the affinity column, and can be used for purifying and detecting samples of the five toxins without mutual interference and influence.

Abstract: An engine piston is provided. A first sealing structure, including a first sealing rubber ring and a first annular groove, is provided at a head of the engine piston. The first sealing rubber ring has a U-shaped section with a reserved space at the top of the first sealing rubber ring, and a gap for circulating hydraulic oil is provided between a ring bank, above the first sealing rubber ring, of the engine piston and a simulated cylinder liner of a fatigue testing apparatus for an engine piston. In a case that the hydraulic oil is introduced into the fatigue testing apparatus for the engine piston to simulate pressure loading under a high-explosion pressure, when the hydraulic oil enters into the reserved space from the gap for circulating the hydraulic oil, an inner wall of the reserved space is squeezed and the first sealing rubber ring is deformed.

Abstract: A silicon-based anode material, a preparation method thereof and a lithium ion battery are provided. The preparation method of the silicon-based anode material includes: passing a silicon substrate material through a vapor deposition gas to coat the surface of the silicon substrate material with a carbon deposition layer, the vapor deposition gas includes a first carbon source gas and a second carbon source gas, the volume percentage of the first carbon source gas and the second carbon source gas in the vapor deposition gas increases or decreases at different reaction stages for forming the carbon deposition layer. The side of the carbon deposited layer close to the silicon base material is more or less dense than the other side of the carbon deposited layer. The coating layer on the surface of the silicon-based anode material has a continuously changing junction, thereby greatly improving the cycling stability of the material.

Abstract: Ternary precursor particles used for a lithium-ion battery, the ternary precursor particles having a NixCoyMnz(OH)2, wherein, x+y+z=1, 0<x<1, 0<y<1, 0<z<1; each ternary precursor particle is a spheroidal structure, and comprises a shell, a transition layer and a particle core; the shell is a dense structure, the particle core is a porous structure, a density of the shell is greater than a density of the particle core, the transition layer surrounds the particle core and is sandwiched between the shell and the particle core; each ternary precursor particle is a mixture formed by mixing the nickel hydroxide, the cobalt hydroxide and the manganese hydroxide at the atomic level; a crystallinity of the shell is greater than a crystallinity of the transition layer, and the crystallinity of the transition layer is greater than a crystallinity of the particle core.

Abstract: A silicon-based anode material for secondary batteries, a preparation method thereof and a secondary battery are provided. The silicon-based anode material includes: an inner core including an Si particle and silicon oxide SiOx1, where 0<x1 <2, a first shell layer including a compound of the general formula MySiOz (0<y?4, 0<z?5, and z?x1) and a C particle, wherein the first shell layer covers the inner core, and the contents of M and C in the first shell layer gradually increase from a side thereof close to the inner core to another side thereof far away from the inner core; and a second shell layer including a carbon film layer or a composite film layer formed by a carbon film layer and a conductive additive, the second shell layer covers the first shell layer. The first charge-discharge cycle capability of the silicon-based anode material is improved, and the manufacturing cost is reduced.

Abstract: A silicon-based anode material, a preparation method thereof and a lithium ion battery are provided. The preparation method of the silicon-based anode material includes: passing a silicon substrate material through a vapor deposition gas to coat the surface of the silicon substrate material with a carbon deposition layer, the vapor deposition gas includes a first carbon source gas and a second carbon source gas, the volume percentage of the first carbon source gas and the second carbon source gas in the vapor deposition gas increases or decreases at different reaction stages for forming the carbon deposition layer. The side of the carbon deposited layer close to the silicon base material is more or less dense than the other side of the carbon deposited layer. The coating layer on the surface of the silicon-based anode material has a continuously changing junction, thereby greatly improving the cycling stability of the material.

Abstract: Ternary precursor particles used for a lithium-ion battery, the ternary precursor particles having a NixCoyMnz(OH)2, wherein, x+y+z=1, 0<x<1, 0<y<1, 0<z<1; each ternary precursor particle is a spheroidal structure, and comprises a shell, a transition layer and a particle core; the shell is a dense structure, the particle core is a porous structure, the transition layer surrounds the particle core and is sandwiched between the shell and the particle core; each ternary precursor particle is a mixture formed by mixing the nickel hydroxide, the cobalt hydroxide and the manganese hydroxide at the atomic level; a crystallinity of the shell is greater than a crystallinity of the transition layer, and the crystallinity of the transition layer is greater than a crystallinity of the particle core.

Abstract: A semiconductor device has a semiconductor material in a substrate. The semiconductor device has an MOS transistor. A trench in the substrate extends from a top surface of the substrate) into the semiconductor material. A shield is disposed in the trench. The shield has a contact portion which extends toward a top surface of the trench. A gate of the MOS transistor is disposed in the trench over the shield. The gate is electrically isolated from the shield. The gate is electrically isolated from the contact portion of the shield by a shield isolation layer which covers an angled surface of the contact portion extending toward the top of the trench. Methods of forming the semiconductor device are disclosed.

Abstract: A bidirectional windage resistance brake apparatus including a base, a first cylinder, a second cylinder, a first windage resistance plate and a second windage resistance plate, a tail of the first windage resistance plate is hinged with the base; the first windage resistance plate includes a first supporting rod, one end of which is hinged to a middle portion of the first windage resistance plate, and another end is connected with the first cylinder; a tail of the second windage resistance plate is hinged with the base; the second windage resistance plate includes a second supporting rod, one end of which is hinged to a middle portion of the second windage resistance plate, and another end is connected with the second cylinder. The brake apparatus is high in brake efficiency and reliability.

Abstract: A bidirectional windage resistance brake apparatus including a base, a first cylinder, a second cylinder, a first windage resistance plate and a second windage resistance plate, a tail of the first windage resistance plate is hinged with the base; the first windage resistance plate includes a first supporting rod, one end of which is hinged to a middle portion of the first windage resistance plate, and another end is connected with the first cylinder; a tail of the second windage resistance plate is hinged with the base; the second windage resistance plate includes a second supporting rod, one end of which is hinged to a middle portion of the second windage resistance plate, and another end is connected with the second cylinder. The brake apparatus is high in brake efficiency and reliability.

Abstract: A semiconductor device, and methods of forming the same. In one example, the semiconductor device includes a trench in a substrate having a top surface, and a shield within the trench. The semiconductor device also includes a shield liner between a sidewall of the trench and the shield, and a lateral insulator over the shield contacting the shield liner. The semiconductor device also includes a gate dielectric layer on an exposed sidewall of the trench between the lateral insulator and the top surface. The lateral insulator may have a minimum thickness at least two times thicker than a maximum thickness of the gate dielectric layer.

Abstract: A semiconductor device has a semiconductor material in a substrate. The semiconductor device has an MOS transistor. A trench in the substrate extends from a top surface of the substrate) into the semiconductor material. A shield is disposed in the trench. The shield has a contact portion which extends toward a top surface of the trench. A gate of the MOS transistor is disposed in the trench over the shield. The gate is electrically isolated from the shield. The gate is electrically isolated from the contact portion of the shield by a shield isolation layer which covers an angled surface of the contact portion extending toward the top of the trench. Methods of forming the semiconductor device are disclosed.

Abstract: A semiconductor device, and methods of forming the same. In one example, the semiconductor device includes a trench in a substrate having a top surface, and a shield within the trench. The semiconductor device also includes a shield liner between a sidewall of the trench and the shield, and a lateral insulator over the shield contacting the shield liner. The semiconductor device also includes a gate dielectric layer on an exposed sidewall of the trench between the lateral insulator and the top surface. The lateral insulator may have a minimum thickness at least two times thicker than a maximum thickness of the gate dielectric layer.

Abstract: The present disclosure provides a method and an apparatus for acquiring remote-procedure-call (RPC) member information, an electronic device and a storage medium, and relates to the field of micro-services technologies in cloud services. The method includes: pushing, by nodes of a RPC cluster, respective local member lists of the nodes of the RPC cluster to each other, and merging, by each node of the RPC cluster, a received member list with a current local member list while performing deduplication until member lists of the nodes of the RPC cluster are synchronized.

Abstract: A method for arranging sensors and a sensor arrangement structure, pair sensors by adding an additional sensor, and sets an operating mode between the sensors in an “OR” mode by a software. When one of the sensors become abnormal, an apparatus operates normally, which lowers a probability of crash of the apparatus, reduces loss of production capacity and raises production rate.

Abstract: A trench gate metal oxide semiconductor field effect transistor (MOSFET) device includes an epitaxial layer on a substrate both doped a first conductivity type. Active area trenches have polysilicon gates over a double shield field plate. A junction termination trench includes a single shield field plate in a junction termination area which encloses the active area that includes a retrograde dopant profile of the second conductivity type into the epitaxial layer in the junction termination area. Pbody regions of a second conductivity type are between active trenches and between the outermost active trench and the junction termination trench. Source regions of the first conductivity type are in the body regions between adjacent active trenches. Metal contacts are over contact apertures that extend through a pre-metal dielectric layer reaching the body region under the source region, the single shield field plate, and that couples together the polysilicon gates.