Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

Abstract: A semiconductor device includes an insulating base including a trench, a transistor including a gate electrode and vertical channel in the trench, and a source electrode in the insulating base outside the trench, an isolation layer on the gate electrode in the trench, and a capacitor including a trench capacitor portion that is on the isolation layer in the trench, and a stacked capacitor portion that is coupled to the source electrode of the transistor outside the trench.

Abstract: The present disclosure provides an optical device including a tray with a step structure, first filters, second filters, and an optical signal router. The step structure has a first portion and a second portion laterally connected to the first portion. The first portion has a first bottom surface and a first top surface. The second portion has a second bottom surface and a second top surface. The first bottom surface and the second bottom surface are substantially coplanar, and the first portion is thinner than the second portion. The first filters are mounted on the first top surface. The second filters are mounted on the second top surface. The optical signal router optically couples to the first filters and the second filters, and is configured to receive a light beam, transmissible to the tray, from one of the first filters or the second filters.

Abstract: An active device, a semiconductor device and a semiconductor chip are provided. The active device includes: a channel layer; a top source/drain electrode, disposed at a top side of the channel layer; a first bottom source/drain electrode and a second bottom source/drain electrode, disposed at a bottom side of the channel layer; a first gate structure and a second gate structure, located between the top source/drain electrode and the first bottom source/drain electrode, wherein the first gate structure comprises a non-ferroelectric dielectric layer, and the second gate structure comprises a ferroelectric layer; and a third gate structure and a fourth gate structure, located between the top source/drain electrode and the second bottom source/drain electrode, wherein the third gate structure comprises a non-ferroelectric dielectric layer, and the fourth gate structure comprises a ferroelectric layer.

Abstract: A semiconductor device may include a non-volatile memory cell structure that may be formed in a back end region of a semiconductor device. The non-volatile memory cell structure may include a floating gate structure in which a portion of a dielectric layer is included between a gate structure and a word line conductive structure. The separation of the gate structure and the word line conductive structure by the dielectric layer results in the gate structure being a floating gate structure. This enables a charge to be selectively stored on the gate structure, even when power is removed from the word line conductive structure. The non-volatile memory cell structure along with a volatile memory cell structure are provided in the back end region of the semiconductor device, such that caching and long-term storage may be performed in the back end region of the semiconductor device.

Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Abstract: A cleaning system and a cleaning method are provided. The cleaning system includes a main body, an air suctioning device, a light source, an optical sensor, a memory and a processing unit. The air suctioning device includes an air flow passage and a fan-motor assembly that is disposed in the air flow passage and generates a suction force to suction outside air through the air flow passage. The light source emit light to the air flow passage. The optical sensor captures a plurality of successive image frames from the air flow passage. The processing unit is configured to: obtain first and second image frames from the successive image frames; compare the first image frame with the second image frame to identify dust particles; obtain a particle feature of the dust particles; and determine a current cleanness condition according to the particle feature.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A capacitorless dynamic random access memory (DRAM) cell may include a plurality of transistors. At least a subset of the transistors may include a channel layer that approximately resembles an inverted U shape, an ohm symbol (?) shape, or an uppercase/capital omega (?) shape. The particular shape of the channel layer provides an increased channel length for the subset of the transistors, which may reduce the off current and may reduce current leakage in the subset of the transistors. The reduced off current and reduced current leakage may increase data retention in the subset of the transistors and/or may increase the reliability of the subset of the transistors without increasing the footprint of the subset of the transistors. Moreover, the particular shape of the channel layer enables the subset of the transistors to be formed with a top-gate structure, which provides low integration complexity with other transistors in the capacitorless DRAM cell.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

Abstract: An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.

Abstract: Electronic design automation (EDA) of the present disclosure logically places components of the electronic circuitry onto an electronic design real estate to determine an architectural design placement for the electronic circuitry. The EDA evaluates a metaheuristic algorithm starting with an initial placement of components of the electronic circuitry onto the electronic design real estate to provide multiple possible placements for placing these components of the electronic circuitry onto the electronic design real estate. The EDA utilizes the multiple possible placements of the metaheuristic algorithm to train one or more probabilistic functions of a model-based reinforcement learning (RL) algorithm. The EDA evaluates the model-based RL algorithm utilizing the one or more probabilistic functions to determine the architectural design placement.

Abstract: A semiconductor device package includes a redistribution layer, a plurality of conductive pillars, a reinforcing layer and an encapsulant. The conductive pillars are in direct contact with the first redistribution layer. The reinforcing layer surrounds a lateral surface of the conductive pillars. The encapsulant encapsulates the first redistribution layer and the reinforcing layer. The conductive pillars are separated from each other by the reinforcing layer.

Abstract: A basic structural body for constructing heat dissipation device and a heat dissipation device are disclosed. The heat dissipation device includes a first basic structural body having a wick structure formed on one side surface thereof; and the first basic structural body and the wick structure are structural bodies formed layer by layer. Two pieces of first basic structural bodies can be correspondingly closed together to construct a heat dissipation device internally defining an airtight chamber. In this manner, the heat dissipation device can be designed in a more flexible manner.

Abstract: A basic structural body for constructing heat dissipation device and a heat dissipation device are disclosed. The heat dissipation device includes a first basic structural body having a wick structure formed on one side surface thereof; and the first basic structural body and the wick structure are structural bodies formed layer by layer. Two pieces of first basic structural bodies can be correspondingly closed together to construct a heat dissipation device internally defining an airtight chamber. In this manner, the heat dissipation device can be designed in a more flexible manner.

Abstract: The present invention discloses a noise reduction touch light adjustment device including a light adjustment film, a capacitive touch panel, a noise reduction film, a glass substrate, a control circuit module, and an alternating current (AC) transformer. The noise reduction film is disposed between the light adjustment film and the capacitive touch panel to lower noise inputted from the AC transformer into the light adjustment film such that the capacitive touch panel is ensured to be operated precisely.

Abstract: A semiconductor device package includes a redistribution layer, a plurality of conductive pillars, a reinforcing layer and an encapsulant. The conductive pillars are in direct contact with the first redistribution layer. The reinforcing layer surrounds a lateral surface of the conductive pillars. The encapsulant encapsulates the first redistribution layer and the reinforcing layer. The conductive pillars are separated from each other by the reinforcing layer.

Abstract: An electromagnetic induction hub includes a first disc having a first magnet, a second disc having a second magnet, a coil disc formed between the first disc and the second disc, a bearing penetrates the first disc, the second disc and the coil disc.

Abstract: An electronic device package and a method for manufacturing an electronic device package are provided. The electronic device package includes electronic device structure which includes a first electronic device and a first encapsulant, a second electronic device, and a second encapsulant. The first encapsulant encapsulates the first electronic device. The second electronic device is adjacent to the electronic device structure. The second encapsulant encapsulates the electronic device structure and the second electronic device. A first extension line along a lateral surface of the first electronic device and a second extension line along a lateral surface of the first encapsulant define a first angle, the second extension line along the lateral surface of the first encapsulant and a third extension line along a lateral surface of the second electronic device define a second angle, and the first angle is different from the second angle.