Abstract: A method of forming a MOSFET structure is provided. In the method, an epitaxial layer is formed. A cap layer is formed above the epitaxial layer. A first trench is formed above the epitaxial layer. A protection layer is deposited within the first trench. The protection layer is a material selected from the group consisting of germanium and silicon-germanium.

Abstract: An integrated circuit structure includes a first Inter-Layer Dielectric (ILD), a gate stack in the first ILD, a second ILD over the first ILD, a contact plug in the second ILD, and a dielectric protection layer on opposite sides of, and in contact with, the contact plug. The contact plug and the dielectric protection layer are in the second ILD. A dielectric capping layer is over and in contact with the contact plug.

Abstract: According to an exemplary embodiment, a semiconductor device is provided. The semiconductor device includes: a substrate; a first vertical structure protruding from the substrate; a second vertical structure protruding from the substrate; an STI between the first vertical structure and the second vertical structure; wherein a first horizontal width between the first vertical structure and the STI is substantially the same as a second horizontal width between the second vertical structure and the STI.

Abstract: Some embodiments of the present disclosure relate to a method. In this method, a semiconductor substrate, which has an active region disposed in the semiconductor substrate, is received. A shallow trench isolation (STI) structure is formed to laterally surround the active region. An upper surface of the active region bounded by the STI structure is recessed to below an upper surface of the STI structure. The recessed upper surface extends continuously between inner sidewalls of the STI structure and leaves upper portions of the inner sidewalls of the STI structure exposed. A semiconductor layer is epitaxially grown on the recessed surface of the active region between the inner sidewalls of the STI structure. A gate dielectric is formed over the epitaxially-grown semiconductor layer. A conductive gate electrode is formed over the gate dielectric.

Abstract: A method and an apparatus for displaying contact information using an image including the contact information. The method includes displaying an image; detecting when a preset region of the image is selected; and displaying the contact information corresponding to the preset region of the image, when the preset region is selected.

Abstract: A method includes forming a pattern-reservation layer over a semiconductor substrate. The semiconductor substrate has a major surface. A first self-aligned multi-patterning process is performed to pattern a pattern-reservation layer. The remaining portions of the pattern-reservation layer include pattern-reservation strips extending in a first direction that is parallel to the major surface of the semiconductor substrate. A second self-aligned multi-patterning process is performed to pattern the pattern-reservation layer in a second direction parallel to the major surface of the semiconductor substrate. The remaining portions of the pattern-reservation layer include patterned features. The patterned features are used as an etching mask to form semiconductor nanowires by etching the semiconductor substrate.

Abstract: A device comprises a first group of nanowires having a first pattern, a second group of nanowires having a second pattern, a third group of nanowires having a third pattern and a fourth group of nanowires having a fourth pattern, wherein the first pattern, the second pattern, the third pattern and the fourth pattern form a repeating pattern.

Abstract: A display device receiving an image is provided. The display device includes a micro control unit and a plurality of transceivers. The plurality of transceivers are disposed in a plurality of corners of the display device respectively and connected with the micro control unit. When the display device corporately display the image with a plurality of the display devices, the transceivers in the display device detects detected information from the transceivers in the adjacent display devices, and the micro control unit determines an absolute coordinate information of the display device according to the detected information, wherein the display device displays a portion of the image according to the absolute coordinate information of the display device.

Abstract: The embodiments described provide methods and semiconductor device areas for etching an active area region on a semiconductor body and epitaxially depositing a semiconductor layer overlying the active region. The methods enable the mitigation or elimination of problems encountered in subsequent manufacturing associated with STI divots.

Abstract: Some embodiments of the present disclosure relate to a method to form a source/drain self-aligned contact to a transistor or other semiconductor device. The method comprises forming a pair of gate structures over a substrate, and forming a source/drain region between the pair of gate structures. The method further comprises forming a sacrificial source/drain contact which is arranged over the source/drain region and which is arranged laterally between neighboring sidewalls of the pair of gate structures. The method further comprises forming a dielectric layer which extends over the sacrificial source/drain contact and over the pair of gate structures. The dielectric layer differs from the sacrificial source/drain contact. The method further comprises removing a portion of the dielectric layer over the sacrificial source/drain contact and subsequently removing the sacrificial source/drain contact to form a recess, and filling the recess with a conductive material to form a source/drain contact.

Abstract: A method of forming a MOSFET structure is provided. In the method, an epitaxial layer is formed. A cap layer is formed above the epitaxial layer. A first trench is formed above the epitaxial layer. A protection layer is deposited within the first trench. The protection layer is a material selected from the group consisting of germanium and silicon-germanium.

Abstract: A method of forming a channel of a gate structure is provided. A first epitaxial channel layer is formed within a first trench of the gate structure. A dry etching process is performed on the first epitaxial channel layer to form a second trench. A second epitaxial channel layer is formed within the second trench.

Abstract: A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including a Si line on a substrate, shallow trench isolation (STI) oxide on both sides of the Si line on the substrate, and a poly wall on top of and across the STI oxide and the Si line, wherein the Si line is higher than the STI oxide from the substrate. The method further includes thinning the STI oxide and the Si line while maintaining about the same height ratio of the Si line and the STI oxide, and forming a spacer wall adjacent to both sides of the poly wall and further adjacent to Si and STI oxide side walls under the poly wall uncovered due thinning the STI oxide and the Si line.

Abstract: A Fin-FET fabrication approach and structure are provided using channel epitaxial regrowth flow (CRF). The method includes forming a Fin-FET structure including a Si line on a substrate, shallow trench isolation (STI) oxide on both sides of the Si line on the substrate, and a poly wall on top of and across the STI oxide and the Si line, wherein the Si line is higher than the STI oxide from the substrate. The method further includes thinning the STI oxide and the Si line while maintaining about the same height ratio of the Si line and the STI oxide, and forming a spacer wall adjacent to both sides of the poly wall and further adjacent to Si and STI oxide side walls under the poly wall uncovered due thinning the STI oxide and the Si line.

Abstract: A display device includes a display panel, a base, a circuit module, and a wall mount bracket. The base includes a base body and a carrier pivoted around the base body. The display panel is disposed on the base body. The carrier is capable of swinging between a support position and a folded position relative to the display panel. The circuit module is disposed in the carrier and is electrically connected to the display panel. The wall mount bracket is disposed on a surface of the carrier and moves to an unexpanded position or an expanded position relative to the carrier through an extension plate, so as to increase a torque when the base supports the display panel to stand or be hung on a surface.

Abstract: The embodiments described provide methods and semiconductor device areas for etching an active area region on a semiconductor body and epitaxially depositing a semiconductor layer overlying the active region. The methods enable the mitigation or elimination of problems encountered in subsequent manufacturing associated with STI divots.

Abstract: An electrical impedance detecting device of a portable electrical impedance imaging system by utilizing a theory of sending excitation signal and detecting response signal and a method thereof, wherein the excitation signal is a constant square wave excitation current signal, the response voltage signal on a target is transformed to a square wave signal with appropriate amplitudes by buffering, amplifying, RC filtering and differential amplifying circuits, and then is transformed to a digital signal at a proper time by an analog-to-digital converter. The response voltage signal is sampled once when at high level and once when at low level for every circle of the square wave signal by the ADC, and a sample V1 and a sample V2 are obtained respectively, difference of the sample V1 and the sample V2 is taken as a detecting result for one circle. An average value of the detecting result from a plurality of circles may be taken as a final result.

Abstract: An image blending method implemented by an image capturing device includes: focusing on a close foreground and capturing a first image; focusing on a distant background and capturing a second image; and blending the first image and the second image together to generate a composite image, in which the close foreground is from the close background of the first image and is set to an appropriate proportion and the distant background is from the distant background of the second image and is set to an appropriate proportion. The image capturing device is also provided.

Abstract: A display device includes a display panel, a base, a circuit module, and a wall mount bracket. The base includes a base body and a carrier pivoted around the base body. The display panel is disposed on the base body. The carrier is capable of swinging between a support position and a folded position relative to the display panel. The circuit module is disposed in the carrier and is electrically connected to the display panel. The wall mount bracket is disposed on a surface of the carrier and moves to an unexpanded position or an expanded position relative to the carrier through an extension plate, so as to increase a torque when the base supports the display panel to stand or be hung on a surface.

Abstract: A method for exchanging information with a base station includes: communicating with the base station using electromagnetic waves with a first frequency; detecting a first connection request carried in the first electromagnetic; receiving the first connection request if the first connection request is detected; and receiving information carried in the electromagnetic waves with a second frequency that is higher than the first frequency from the base station. An apparatus for exchanging information with the base station is also disclosed.