Abstract: The present application provides a backside illuminated CMOS image sensor and a method of making the same. The backside illuminated CMOS image sensor comprises: a pixel region substrate, an isolation structure, a first dielectric layer, a metal grid, and second dielectric layer, wherein grid trenches and a metal plug are formed in the pixel region substrate, the isolation structure is located in each of the grid trenches and on the surface of the pixel region substrate outside of the grid trenches, and the isolation structure comprises a high-K dielectric layer, an insulating layer, and a metal core layer.

Abstract: The present application discloses a method for manufacturing a semiconductor device, which includes the following steps: step 1: forming first gate structures on a semiconductor substrate; step 2: performing a first etching process to etch the semiconductor substrate on at least one side of each first gate structure to a certain depth and form a first groove; step 3: performing a stress memorization process, including step 31: forming a stress dielectric layer, the stress dielectric layer covering a peripheral surface of each first gate structure and being filled in the first groove; step 32: performing annealing to transfer the stress of the stress dielectric layer to a channel region; step 33: removing the stress dielectric layer. The present application can increase the effect of transferring the stress of the stress dielectric layer to the channel region, thereby increasing the mobility of channel carriers.

Abstract: The present application discloses a low voltage triggering silicon controlled rectifier which includes: an N well and a P well forming a PN junction, a first P+ region formed in the N well and connected to an anode, and a first N+ region formed in the P well and connected to a cathode. A second P+ region is formed in the N well at the PN junction and diffuses into the P well. A second N+ region is formed in the P well at the PN junction and diffuses into the N well. A first gate structure connected to the anode is formed at the surface of the N well between the first and second P+ regions; and a second gate structure connected to the cathode is formed at the surface of the P well between the first and second N+ regions.

Abstract: The disclosure discloses a swirler-type gas-liquid two-phase flow metering device, mainly including a swirler, a capacitance probe module, a hot-wire probe module, a hub and a data acquisition computer. A flow measurement method using the gas-liquid two-phase flow metering device includes: adjusting, by the swirler, flow patterns of an incoming gas-liquid two-phase flow into a uniform annular flow, measuring gas and liquid phase distribution by the capacitance probe module, and measuring gas and liquid phase flow velocity distribution by the hot-wire probe, and volumetric flow rates of gas, thereby obtaining liquid phases according to flow areas and average flow velocities of the gas and liquid phases. Compared with the existing multiphase flowmeter, the gas-liquid two-phase flow metering device of the disclosure has the advantages of small size, compact structure, small resistance loss, wide measurement range, high measurement accuracy, etc.

Abstract: The present application discloses a cell structure of a super flash comprising: a word line gate, a floating gate, a control gate, and an erase gate. The floating gate comprises a first TiN layer located on a side face of the control gate and a second polysilicon layer formed at the top of the first TiN layer. The second polysilicon layer is in electric contact with the first TiN layer. The erase gate is located at the top of the second polysilicon layer, and the erase gate and the floating gate are spaced from each other by a second inter-gate dielectric layer therebetween. During erasing, the top angle of the second polysilicon layer generates point discharge, thereby reducing an erasing voltage. The present application also discloses a method for manufacturing a super flash.

Abstract: Provided are an adapter and a charging method. The adapter includes: at least one filter capacitor (210) having a capacitance smaller than a predetermined threshold and configured to filter a rectified alternating current to obtain a pulsating direct current; and a voltage transformation module (220) configured to transform the pulsating direct current to obtain a voltage and a current for charging a device to be charged. The adapter for charging a battery is provided, the volume of the adapter can be reduced and the miniaturization of the volume of the adapter can be realized.

Abstract: A method and a system for diagnosing high-enthalpy shock tunnel flow field parameters are provided. In the method, the parameters of the reservoir at the end of shock tunnel and nozzle free flow are measured by using a contact measurement technology and a non-contact spectrum measurement technology to diagnose the high-enthalpy shock tunnel flow field. With the method, not only flow field temperature, pressure, component category and component concentration, but also non-equilibrium state information of the flow field and the effective wind tunnel working time can be obtained.

Abstract: Some implementations are directed to adapting a client application on a feature phone based on experiment parameters. Some of those implementations are directed to adapting an assistant client application, where the assistant client application interacts with remote assistant component(s) to provide automated assistant functionalities via the assistant client application of the feature phone. Some implementations are additionally or alternatively directed to determining whether an invocation, of an assistant client application on a feature phone, is a request for transcription of voice data received in conjunction with the invocation, or is instead a request for an assistant response that is responsive to the transcription of the voice data (e.g., includes assistant content that is based on and in addition to the transcription, and that optionally lacks the transcription itself).

Abstract: A method making a SRAM includes forming a low voltage region, a medium voltage region, and a high voltage region in an active region; forming a low voltage PMOS active region and a low voltage NMOS active region in the low voltage region; forming an STI region between the low voltage PMOS active region and the low voltage NMOS active region; covering the SRAM structure with an oxide layer and an HTO film layer; forming a hard mask on the HTO film layer; performing photolithography to expose the hard mask on the active low voltage region; removing the exposed hard mask from the active low voltage region and removing the HTO film layer and the oxide layer below the hard mask.

Abstract: A method and a system for diagnosing high-enthalpy shock tunnel flow field parameters are provided. In the method, the parameters of the reservoir at the end of shock tunnel and nozzle free flow are measured by using a contact measurement technology and a non-contact spectrum measurement technology to diagnose the high-enthalpy shock tunnel flow field. With the method, not only flow field temperature, pressure, component category and component concentration, but also non-equilibrium state information of the flow field and the effective wind tunnel working time can be obtained.

Abstract: The present application discloses a cell structure of a super flash comprising: a word line gate, a floating gate, a control gate, and an erase gate. The floating gate comprises a first TiN layer located on a side face of the control gate and a second polysilicon layer formed at the top of the first TiN layer. The second polysilicon layer is in electric contact with the first TiN layer. The erase gate is located at the top of the second polysilicon layer, and the erase gate and the floating gate are spaced from each other by a second inter-gate dielectric layer therebetween. During erasing, the top angle of the second polysilicon layer generates point discharge, thereby reducing an erasing voltage. The present application also discloses a method for manufacturing a super flash.

Abstract: Some implementations are directed to adapting a client application on a feature phone based on experiment parameters. Some of those implementations are directed to adapting an assistant client application, where the assistant client application interacts with remote assistant component(s) to provide automated assistant functionalities via the assistant client application of the feature phone. Some implementations are additionally or alternatively directed to determining whether an invocation, of an assistant client application on a feature phone, is a request for transcription of voice data received in conjunction with the invocation, or is instead a request for an assistant response that is responsive to the transcription of the voice data (e.g., includes assistant content that is based on and in addition to the transcription, and that optionally lacks the transcription itself).

Abstract: The disclosure discloses a swirler-type gas-liquid two-phase flow metering device, mainly including a swirler, a capacitance probe module, a hot-wire probe module, a hub and a data acquisition computer. A flow measurement method using the gas-liquid two-phase flow metering device includes: adjusting, by the swirler, flow patterns of an incoming gas-liquid two-phase flow into a uniform annular flow, measuring gas and liquid phase distribution by the capacitance probe module, and measuring gas and liquid phase flow velocity distribution by the hot-wire probe, and volumetric flow rates of gas, thereby obtaining liquid phases according to flow areas and average flow velocities of the gas and liquid phases. Compared with the existing multiphase flowmeter, the gas-liquid two-phase flow metering device of the disclosure has the advantages of small size, compact structure, small resistance loss, wide measurement range, high measurement accuracy, etc.

Abstract: Some implementations are directed to adapting a client application on a feature phone based on experiment parameters. Some of those implementations are directed to adapting an assistant client application, where the assistant client application interacts with remote assistant component(s) to provide automated assistant functionalities via the assistant client application of the feature phone. Some implementations are additionally or alternatively directed to determining whether an invocation, of an assistant client application on a feature phone, is a request for transcription of voice data received in conjunction with the invocation, or is instead a request for an assistant response that is responsive to the transcription of the voice data (e.g., includes assistant content that is based on and in addition to the transcription, and that optionally lacks the transcription itself).

Abstract: The present application discloses a low voltage triggering silicon controlled rectifier which includes: an N well and a P well forming a PN junction, a first P+ region formed in the N well and connected to an anode, and a first N+ region formed in the P well and connected to a cathode. A second P+ region is formed in the N well at the PN junction and diffuses into the P well. A second N+ region is formed in the P well at the PN junction and diffuses into the N well. A first gate structure connected to the anode is formed at the surface of the N well between the first and second P+ regions; and a second gate structure connected to the cathode is formed at the surface of the P well between the first and second N+ regions.

Abstract: Embodiments of the present disclosure provide an operation and maintenance system and method. The operation and maintenance system comprises a plurality of interconnected modules including: a data acquisition module, a data storage module, an exception and fault labeling module, an automatic model training and assessment module, an operation and maintenance management and task execution module, and a result checking module.

Abstract: Some implementations are directed to adapting a client application on a feature phone based on experiment parameters. Some of those implementations are directed to adapting an assistant client application, where the assistant client application interacts with remote assistant component(s) to provide automated assistant functionalities via the assistant client application of the feature phone. Some implementations are additionally or alternatively directed to determining whether an invocation, of an assistant client application on a feature phone, is a request for transcription of voice data received in conjunction with the invocation, or is instead a request for an assistant response that is responsive to the transcription of the voice data (e.g., includes assistant content that is based on and in addition to the transcription, and that optionally lacks the transcription itself).

Abstract: The present application discloses a method for manufacturing a semiconductor device, which includes the following steps: step 1: forming first gate structures on a semiconductor substrate; step 2: performing a first etching process to etch the semiconductor substrate on at least one side of each first gate structure to a certain depth and form a first groove; step 3: performing a stress memorization process, including step 31: forming a stress dielectric layer, the stress dielectric layer covering a peripheral surface of each first gate structure and being filled in the first groove; step 32: performing annealing to transfer the stress of the stress dielectric layer to a channel region; step 33: removing the stress dielectric layer. The present application can increase the effect of transferring the stress of the stress dielectric layer to the channel region, thereby increasing the mobility of channel carriers.

Abstract: A refrigerator supporting rod for installing lighting device has a rod body, the rod body having an inner side surface facing toward the refrigerator and an outer side surface back toward the refrigerator, a heat insulating layer is provided between the inner side surface and the outer side surface, the inner side surface is provided with a lamp mounting groove extending in the longitudinal direction. According to the refrigerator supporting rod for installing lighting device, a lamp can be installed in an embedded mode to integrate the two, so that the probability of touching the lamp is reduced, and the likelihood of damage is reduced.

Abstract: A plug-in structure has at least one set of male plugs and female plugs that are mated, wherein the male plug has a pin, and the female plug includes: a mounting base, which is provided with a mounting channel for inserting the pin; multiple sets of reeds, arranged in the mounting channel at intervals along the length direction of the mounting channel for clamping the pin. A lamp can be made with the plug-in structure. According to the plug-in structure and the lamp with the plug-in structure, the multi-stage reeds are arranged in the mounting channels to clamp the pins, so that the pins can be kept straight and flat and are not prone to deforming, the insertion and extraction force can be increased, and the assembly failure rate can be reduced.