Abstract: A manipulating method of a nonvolatile memory is provided and comprises following steps. The nonvolatile memory having a plurality of memory cell is provided. Two adjacent memory cells correspond to one bit and comprise a substrate, a first and another first doping regions, a second doping region, a charge trapping layer, a control gate, a first bit line, a source line and a second bit line different from the first bit line. A first and a second channel are formed. The charge trapping layer is disposed on the first and the second channels. The two adjacent memory cells are programmed by following steps. A first positive and negative voltages are applied to the control gate between the first and the second doping regions and the control gate between the second and the another first doping regions, respectively. A first voltage is applied to the source line.

Abstract: A method for manufacturing a non-volatile memory structure includes providing a substrate having a memory region and a logic region defined thereon, masking the logic region while forming at least a first gate in the memory region, forming an oxide-nitride-oxide (ONO) structure under the first gate, forming an oxide structure covering the ONO structure on the substrate, masking the memory region while forming a second gate in the logic region, and forming a first spacer on sidewalls of the first gate and a second spacer on sidewalls of the second gate simultaneously.

Abstract: A manipulating method of a nonvolatile memory is provided and comprises following steps. The nonvolatile memory having a plurality of memory cell is provided. Two adjacent memory cells correspond to one bit and comprise a substrate, a first and another first doping regions, a second doping region, a charge trapping layer, a control gate, a first bit line, a source line and a second bit line different from the first bit line. A first and a second channel are formed. The charge trapping layer is disposed on the first and the second channels. The two adjacent memory cells are programmed by following steps. A first positive and negative voltages are applied to the control gate between the first and the second doping regions and the control gate between the second and the another first doping regions, respectively. A first voltage is applied to the source line.

Abstract: A method for manufacturing a non-volatile memory structure includes providing a substrate having a gate structure, performing a first oxidation process to form a first SiO layer at least covering a bottom corner of the conductive layer, performing a first etching process to remove the first SiO layer and a portion of the dielectric layer to form a cavity, performing a second oxidation process to form a second SiO layer covering sidewalls of the cavity and a third SiO layer covering a surface of the substrate, forming a first SiN layer filling in the cavity and covering the gate structure on the substrate, and removing a portion of the first SiN layer to form a SiN structure including a foot portion filling in the cavity and an erection portion upwardly extended from the foot portion, and the erection portion covering sidewalls of the gate structure.

Abstract: A method for programming a non-volatile memory cell is described. The memory cell includes a substrate, a gate over the substrate, a charge-trapping structure at least between the substrate and the gate, and first and second S/D regions in the substrate beside the gate. The method includes performing a channel-initiated secondary electron (CHISEL) injection process to inject electrons to the charge-trapping structure.

Abstract: Synchronizing a Graphical User Interface (GUI) operation includes receiving operation information of the GUI operation performed on a first machine. The operation information includes object information and action information. The object information is in a first language and indicates a GUI object to which the GUI operation is directed. The action information indicates an action performed by the GUI operation on the GUI object. The object information in the first language is converted to object information in a second language. A GUI object in a GUI displayed on a second machine is identified according to the object information in the second language. The action indicated by the action information is performed on the identified GUI object.

Abstract: A method of manufacturing high performance metal-oxide-metal capacitor device that resolves problems with implementing high capacitance in the metal-oxide-metal region by filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and filling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor.

Abstract: The manufacturing method of the high performance metal-oxide-metal according to the present invention resolves the problems of implementing high capacitance in the metal-oxide-metal region by the steps of filling with a low-k material both in the metal-oxide-metal region and the metal interconnection region, utilizing performing selective photolithography and etching of the first dielectric layer to define metal-oxide-metal (MOM for short) region, and fulfilling the MOM region with high dielectric constant (high-k) material to realize a high performance MOM capacitor. Using the present method, high-k material and low-k material within the same film layer are realized. High-k material region is used as MOM to achieve high capacitor c, thereby reducing the area used by chips and further improving the electrics performance.

Abstract: A method for processing software layout can include exporting layout setting information from design elements of a software; formatting the layout setting information, and storing it in a layout characteristic file; and importing the layout setting information in the layout characteristic file into design elements of another software. Layout information of each language can be stored in a customizable layout characteristic file.

Abstract: A method and a system for real-time control of a Pay per View (PPV) service are disclosed in the present invention. The method includes: an Internet protocol television service control function (IPTV SCF) entity confirming that there is a PPV program that is not subscribed by a user on a current live channel according to a live session establishment request sent from a user terminal; and the IPTV SCF entity notifying the user terminal to subscribe the PPV program that is not subscribed. A device for real-time control of PPV service is also disclosed in the present invention. With the present invention, the users are enabled to subscribe and view the PPV program in real time, thereby improving the user's experience.