Abstract: A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

Abstract: An integrated circuit includes a first through fourth devices positioned over a substrate, the first device including first through third transceivers, the second device including a fourth transceiver, the third device including a fifth transceiver, and the fourth device including a sixth transceiver. A first radio frequency interconnect (RFI) includes the first transceiver coupled to the fourth transceiver through a first guided transmission medium, a second RFI includes the second transceiver coupled to the fifth transceiver through a second guided transmission medium, and a third RFI includes the third transceiver coupled to the sixth transceiver by the second guided transmission medium.

Abstract: A device includes a dielectric layer, a plurality of grating structures, and a dielectric material between the plurality of grating structures and on top of the plurality of grating structures. The grating structures are arranged on the dielectric layer and separated from each other, the plurality of grating structures each having a bottom portion and top portion, the top portion having a first width and the bottom portion having a second width, the second width being larger than the first width.

Abstract: A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.

Abstract: A communication system includes a transmitter configured to transmit a modulated signal, a transmission line configured to carry the modulated signal, and a receiver coupled to the transmitter by the transmission line, and configured to receive the modulated signal. The transmitter includes a modulator configured to generate the modulated signal responsive to a data signal and a carrier signal. The receiver includes a demodulator configured to demodulate the modulated signal responsive to a first carrier signal. The demodulator includes a filter and a gain adjusting circuit configured to adjust a gain of the filter, and to generate the set of control signals based on a voltage of the filtered first signal and a voltage of the first signal. The gain adjusting circuit includes a first peak detector coupled to the filter, and configured to detect a peak value of the voltage of the filtered first signal.

Abstract: A grating coupler integrated in a photonically-enabled circuit and a method for fabricating the same are disclosed herein. In some embodiments, the grating coupler includes a substrate comprising a silicon wafer, a first grating region etched into the substrate, wherein the first grating region comprises a first plurality of gratings having a first predetermined height, and a second grating region etched into the substrate, wherein the second grating region comprises a second plurality of gratings having a second predetermined height and wherein the first and second predetermined heights are not identical.

Abstract: An optical interconnect structure including a base substrate, an optical waveguide, a first reflector, a second reflector, a dielectric layer, a first lens, and a second lens is provided. The optical waveguide is embedded in the base substrate. The optical waveguide includes a first end portion and a second end portion opposite to the first end portion. The first reflector is disposed between the base substrate and the first end portion of the optical waveguide. The second reflector is disposed between the base substrate and the second end portion of the optical waveguide. The dielectric layer covers the base substrate and the optical waveguide. The first lens is disposed on the dielectric layer and located above the first end portion of the optical waveguide. The second lens is disposed on the dielectric layer and located above the second end portion of the optical waveguide.

Abstract: In an embodiment, a phase shifter includes: a light input end; a light output end; a p-type semiconductor material, and an n-type semiconductor material contacting the p-type semiconductor material along a boundary area, wherein the boundary area is greater than a length from the light input end to the light output end multiplied by a core width of the phase shifter.

Abstract: An optical attenuating structure is provided. The optical attenuating structure includes a substrate, a waveguide, doping regions, an optical attenuating member, and a dielectric layer. The waveguide is extended over the substrate. The doping regions are disposed over the substrate, and include a first doping region, a second doping region opposite to the first doping region and separated from the first doping region by the waveguide, a first electrode extended over the substrate and in the first doping region, and a second electrode extended over the substrate and in the second doping region. The first optical attenuating member is coupled with the waveguide and disposed between the waveguide and the first electrode. The dielectric layer is disposed over the substrate and covers the waveguide, the doping regions and the first optical attenuating member.

Abstract: A semiconductor device including a singulated structure and an optical fiber assembly is provided. The singulated structure includes a photonic die, an electronic die connected to the photonic die and an optical element over the photonic die. The optical fiber assembly is disposed on a top of the singulated structure and includes a holder and an optical fiber structure. The holder keeps an air gap from the optical element. The optical fiber structure is carried by the holder and configured to be optically communicated with the photonic die through the optical element.

Abstract: A transceiver disposed on a first die in a bidirectional differential die-to-die communication system is disclosed. The transceiver includes a transmission section configured to modulate a first data onto a carrier signal having a first frequency for transmission via a bidirectional differential transmission line; and a reception section configured to receive signals from the bidirectional differential transmission line, the reception section including a filter configured to pass frequencies within a first passband that includes a second frequency, the first frequency being outside of the first passband. According to some embodiments, the reception section is configured to receive, via the bidirectional differential transmission line, modulated data at the second frequency at a same time that the transmission section transmits the modulated data at the first frequency.

Abstract: A method of manufacturing a semiconductor device including operations including the operations of forming a ground plane over a substrate, forming a first conductive pillar in contact with the ground plane and attaching a die to the substrate, electrically isolating the die from the first conductive pillar with a dielectric fill material, forming a dielectric pad of a high-? dielectric material (having a ? of at least 7 Farads/meter) at an end of the first conductive pillar opposite the ground plane, forming an antenna pad over the dielectric pad, and establishing an electrical connection between the antenna pad and the die.

Abstract: A semiconductor device including a singulated structure and an optical fiber assembly is provided. The singulated structure includes a photonic die, an electronic die connected to the photonic die and an optical element over the photonic die. The optical fiber assembly is disposed on a top of the singulated structure and includes a holder and an optical fiber structure. The holder keeps an air gap from the optical element. The optical fiber structure is carried by the holder and configured to be optically communicated with the photonic die through the optical element.

Abstract: An optical coupler includes a substrate, a mirror layer, a plurality of coupling gratings, a plurality of waveguides, and an oxide layer. The substrate includes a first surface, a second surface opposite to the first surface, and a concave portion exposed from the first surface. The mirror layer is disposed in the concave portion. The coupling gratings are disposed above the mirror layer. The waveguides are laterally aligned with the coupling gratings. The concave portion faces both the coupling gratings and the waveguides. The oxide layer is bonded on the first surface. The coupling gratings and the waveguides are disposed on the oxide layer.

Abstract: A device includes a ground plane electrically connected to a proximal end of at least one conductive pillar and an antenna pad substantially parallel to the ground plane, wherein the antenna pad is separated from a distal end of the at least one conductive pillar by a dielectric pad having a first dielectric constant, wherein the ground plane, the at least one conductive pillar, and the dielectric pad surround an antenna cavity filled with a dielectric fill material having a second dielectric constant different from the first dielectric constant.

Abstract: An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an insulator layer arranged over a substrate. Further, an upper routing structure is arranged over the insulator layer and is made of a semiconductor material. A lower optical routing structure is arranged below the substrate and is embedded in a lower dielectric structure. The integrated chip further includes an anti-reflective layer that is arranged below the substrate and directly contacts the substrate.

Abstract: A method of forming semiconductor device includes forming an active layer in a substrate including forming components of one or more transistors; forming an MD and gate (MDG) layer over the active layer including forming a gate line; forming a metal-to-S/D (MD) contact structure; and forming a waveguide between the gate line and the MD contact structure; forming a first interconnection layer over the MDG layer including forming a first via contact structure over the gate line; forming a second via contact structure over the MD contact structure; and forming a heater between the first and second via contact structures and over the waveguide.

Abstract: A semiconductor structure including a semiconductor substrate, a first patterned dielectric layer, a grating coupler and a waveguide is provided. The semiconductor substrate includes an optical reflective layer. The first patterned dielectric layer is disposed on the semiconductor substrate and covers a portion of the optical reflective layer. The grating coupler and the waveguide are disposed on the first patterned dielectric layer, wherein the grating coupler and the waveguide are located over the optical reflective layer.

Abstract: A semiconductor structure includes a semiconductor substrate, a semiconductor device and a heating structure. The semiconductor substrate includes a device region and a heating region surrounding the device region. The semiconductor device is located on the device region. The heating structure is located on the heating region and includes an intrinsic semiconductor area, at least one heating element and at least one heating pad. The intrinsic semiconductor area is surrounding the semiconductor device, The at least one heating element is located at a periphery of the intrinsic semiconductor area, The at least one heating pad is joined with the at least one heating element, wherein the at least one heating pad includes a plurality of contact structures, and a voltage is supplied from the plurality of contact structures to control a temperature of the at least one heating element.