Patents by Inventor Feng Yi

Feng Yi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11978241
    Abstract: Embodiments of the disclosure provide an image processing method and apparatus, a computer-readable medium, and an electronic device. The image processing method includes: extracting a feature map of a target image; dividing the feature map into target regions; determining weights of the target regions according to feature vectors of the target regions; and generating a feature vector of the target image according to the weights of the target regions and the feature vectors of the target regions.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: May 7, 2024
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LTD
    Inventors: Kun Jin, Shi Jie Zhao, Yang Yi, Feng Li, Xiao Xiang Zuo
  • Publication number: 20240146176
    Abstract: A method of controlling phase shift pulse width modulation of a power converter, the method includes a step of obtaining sampling signals of an output voltage and current of the power converter. Then, a digital signal processor is used to calculate an output power of the power converter. Next, a comparator is used to compare the output power of the power converter with a reference power. When the output power is less than the reference power, the modulation control of the switch of the power converter enters into hard-switching mode, and when the output power is greater than the reference power, the modulation control of the switch of the power converter enters into soft-switching mode.
    Type: Application
    Filed: November 24, 2022
    Publication date: May 2, 2024
    Inventors: Chun-Chen Chen, Jian-Hsieng Lee, Feng-Yi Lin
  • Publication number: 20240126018
    Abstract: The present disclosure provides an optical device including a tray with a step structure, first filters, second filters, and an optical signal router. The step structure has a first portion and a second portion laterally connected to the first portion. The first portion has a first bottom surface and a first top surface. The second portion has a second bottom surface and a second top surface. The first bottom surface and the second bottom surface are substantially coplanar, and the first portion is thinner than the second portion. The first filters are mounted on the first top surface. The second filters are mounted on the second top surface. The optical signal router optically couples to the first filters and the second filters, and is configured to receive a light beam, transmissible to the tray, from one of the first filters or the second filters.
    Type: Application
    Filed: October 13, 2022
    Publication date: April 18, 2024
    Inventors: FENG-CHIANG CHAO, CHANG-YI PENG
  • Publication number: 20240121028
    Abstract: The present disclosure discloses a data receiving apparatus and a data receiving method having blind deconvolution mechanism. A descrambling circuit descrambles received data according to an antenna assumption and N data position assumptions within a transmission period to generate N groups of soft-bit data. A soft-bit processing circuit retrieves bit position data to determine non-variable bit positions and variable bit positions. N circular buffers of a storage circuit store and superimpose the N groups of soft-bit data corresponding to N data position assumptions in a circular manner to generate N groups of superimposed results and keep the data corresponding to the non-variable bit positions. A post-processing circuit performs de-interleaving and decoding on the N groups of superimposed results to generate N groups of decoded results to perform redundancy check thereon. When one decoded results passes the redundancy check, the soft-bit processing circuit stops performing the blind deconvolution process.
    Type: Application
    Filed: June 16, 2023
    Publication date: April 11, 2024
    Inventors: FENG-XIANG WANG, MING-YUE YOU, JYUN-WEI PU, JIA-YI ZHUANG
  • Patent number: 11943909
    Abstract: A semiconductor memory device and a method of forming the same are provided, with the semiconductor memory device including a substrate, a stacked structure, plural openings, plural flared portions and an electrode layer. The stacked structure is disposed on the substrate and includes alternately stacked oxide material layers and stacked nitride material layers. Each of the openings is disposed in the stacked structure, and each of the flared portions is disposed under each of the openings, in connection with each opening. The electrode layer is disposed on surfaces of each opening and each flared portion.
    Type: Grant
    Filed: November 5, 2020
    Date of Patent: March 26, 2024
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee
  • Publication number: 20240096731
    Abstract: A semiconductor package is provided, which includes a first chip disposed over a first package substrate, a molding compound surrounding the first chip, a first thermal interface material disposed over the first chip and the molding compound, a heat spreader disposed over the thermal interface material, and a second thermal interface material disposed over the heat spreader. The first thermal interface material and the second thermal interface material have an identical width.
    Type: Application
    Filed: November 29, 2023
    Publication date: March 21, 2024
    Inventors: Chin-Hua WANG, Po-Yao LIN, Feng-Cheng HSU, Shin-Puu JENG, Wen-Yi LIN, Shu-Shen YEH
  • Publication number: 20240088124
    Abstract: A semiconductor structure, comprising a redistribution layer (RDL) including a dielectric layer and a conductive trace within the dielectric layer; a first conductive member disposed over the RDL and electrically connected with the conductive trace; a second conductive member disposed over the RDL and electrically connected with the conductive trace; a first die disposed over the RDL; a second die disposed over the first die, the first conductive member and the second conductive member; and a connector disposed between the second die and the second conductive member to electrically connect the second die with the conductive trace, wherein the first conductive member is electrically isolated from the second die.
    Type: Application
    Filed: November 24, 2023
    Publication date: March 14, 2024
    Inventors: HSIANG-TAI LU, SHUO-MAO CHEN, MILL-JER WANG, FENG-CHENG HSU, CHAO-HSIANG YANG, SHIN-PUU JENG, CHENG-YI HONG, CHIH-HSIEN LIN, DAI-JANG CHEN, CHEN-HUA LIN
  • Publication number: 20240076797
    Abstract: A susceptor assembly for supporting a crucible during a crystal growth process includes a susceptor base, a tubular sidewall connected to the susceptor base, and a removable sacrifice ring interposed between the susceptor base and the sidewall. Each of the susceptor base and the sidewall is formed of a carbon-containing material. The susceptor base has an annular wall and a shoulder extending radially outward from an outer surface of the annular wall. The sidewall has a first end that receives the annular wall to connect the sidewall to the susceptor base. The sacrifice ring has a first surface that faces the outer surface of the annular wall, a second surface that faces an interior surface of the sidewall, and a ledge extending outward from the second surface that engages the first end of the sidewall.
    Type: Application
    Filed: September 7, 2022
    Publication date: March 7, 2024
    Inventors: Hong-Huei Huang, Benjamin Michael Meyer, Chun-Sheng Wu, Wei-Chen Chou, Chen-Yi Lin, Feng-Chien Tsai
  • Publication number: 20240042416
    Abstract: The present application relates to a superabsorbent polymer and a method for producing the same. The superabsorbent polymer comprises a core structure, a shell layer covering the core structure and a fiber-modified layer covering an outer surface of the shell layer. With the fiber-modified layer, the superabsorbent polymer not only has good water absorption properties, but also has excellent liquid permeability and permeability.
    Type: Application
    Filed: July 28, 2023
    Publication date: February 8, 2024
    Inventors: Tai-Hong LAI, Zhong-Yi CHEN, Cheng-Lin LEE, Feng-Yi CHEN
  • Publication number: 20230369215
    Abstract: A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
    Type: Application
    Filed: July 26, 2023
    Publication date: November 16, 2023
    Applicants: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Shih-Fang Tzou, Fu-Che Lee, Chien-Cheng Tsai, Feng-Ming Huang
  • Patent number: 11769727
    Abstract: A semiconductor memory device and a manufacturing method thereof are provided in the present invention. An under-cut structure is formed at an edge of a bit line contact opening in the process of forming the bit line contact opening for avoiding short problems caused by alignment shifting, and the process window of the process of forming the bit line contact opening may be improved accordingly.
    Type: Grant
    Filed: September 6, 2021
    Date of Patent: September 26, 2023
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Shih-Fang Tzou, Fu-Che Lee, Chien-Cheng Tsai, Feng-Ming Huang
  • Patent number: 11721552
    Abstract: A semiconductor device includes a substrate and a material disposed on the substrate. The material layer includes plural first patterns arranged parallel and separately in an array within a first region of the substrate, and plural second patterns parallel and separately disposed at two opposite sides of the first patterns, and plural third patterns parallel and separately disposed at another two opposite sides of the first patterns, wherein each of the third patterns has a relative greater dimension than that of each of the first patterns.
    Type: Grant
    Filed: December 26, 2021
    Date of Patent: August 8, 2023
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Yu-Cheng Tung, Fu-Che Lee
  • Patent number: 11692628
    Abstract: A sealing device for a gas-liquid two-phase fluid medium under variable working conditions includes a rotating shaft and a housing, and a chamber formed by the housing is configured to accommodate the gas-liquid two-phase fluid medium. The sealing device further includes a labyrinth sealing mechanism and a fluid dynamic-pressure mechanical sealing mechanism with double end faces, where the labyrinth sealing mechanism and the fluid dynamic-pressure mechanical sealing mechanism with double end faces conduct mutual synergetic effect. Sealing buffer chambers are arranged between the labyrinth sealing mechanism and the fluid dynamic-pressure mechanical sealing mechanism; the fluid dynamic-pressure mechanical sealing mechanism is provided with stationary rings and movable rings, where the stationary rings and the movable rings oppositely abut against with each other.
    Type: Grant
    Filed: September 28, 2021
    Date of Patent: July 4, 2023
    Assignee: CHANGSHU INSTITUTE OF TECHNOLOGY
    Inventors: Changping Liang, Qiaoping Yue, Junjun Liu, Feng Yi, Lin Wang
  • Patent number: 11673116
    Abstract: The present invention relates to a superabsorbent polymer and a method for producing the same. The superabsorbent polymer includes a core layer polymerized with monomers having carboxylic group, a first shell layer formed from a surface crosslinking agent, and a second shell layer formed from zingiberaceae extracts. By a surface modification on the first shell layer performed from a specific amount of the zingiberaceae extracts, the superabsorbent polymer produced according to the method for producing the same has a good antimicrobial property and deodorizing effects, and retains an original absorbent property.
    Type: Grant
    Filed: August 10, 2021
    Date of Patent: June 13, 2023
    Assignee: FORMOSA PLASTICS CORPORATION
    Inventors: Zhong-Yi Chen, Cheng-Lin Lee, Feng-Yi Chen, Yu-Yen Chuang
  • Patent number: 11676815
    Abstract: A patterning method includes the following steps. A mask layer is formed on a material layer. A first hole is formed in the mask layer by a first photolithography process. A first mask pattern is formed in the first hole. A second hole is formed in the mask layer by a second photolithography process. A first spacer is formed on an inner wall of the second hole. A second mask pattern is formed in the second hole after the step of forming the first spacer. The first spacer surrounds the second mask pattern in the second hole. The mask layer and the first spacer are removed. The pattern of the first mask pattern and the second mask pattern are transferred to the material layer by an etching process.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: June 13, 2023
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee
  • Patent number: 11653491
    Abstract: A method of manufacturing contacts is provided in the present invention, which include the steps of forming a plurality of mask bars on a substrate, forming a circular mask surrounding each mask bar, wherein the circular masks connect each other and define a plurality of opening patterns collectively with the mask bars, using the mask bars and the circular masks as etch masks to perform an etch process and to transfer the opening patterns and form a plurality recesses in the substrate, and filling up the recesses with metal to form contacts.
    Type: Grant
    Filed: April 21, 2021
    Date of Patent: May 16, 2023
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee
  • Patent number: 11632887
    Abstract: A semiconductor memory device includes a substrate, a dielectric layer, plural bit lines, at least one bit line contact, a spacer structure and a spacer layer. The substrate has an isolation area to define plural active areas. The dielectric layer is disposed on the substrate, and the dielectric layer includes a bottom layer having a sidewall being retracted from sidewalls of other layers of the dielectric layer. The plural bit lines are disposed on the dielectric stacked structure, along a direction, and the at least one bit line contact is disposed below one of the bit lines, within the substrate. The spacer structure is disposed at sidewalls of each of the bit lines, and the spacer layer is disposed on the spacer structure to directly in contact with the spacer structure and the other layers of the dielectric layer.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: April 18, 2023
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Chien-Ming Lu, Fu-Che Lee, Feng-Yi Chang
  • Patent number: 11594360
    Abstract: The present invention provides an electromagnetic apparatus with heat sink structure, comprising: metal housing, the metal housing further comprises the upper housing and the lower housing to fix the components of the electromagnetic apparatus and store the energy of the electromagnetic apparatus during operation; the electrical coil is mounted on the coil shelf and is provided with numbers of primary windings and secondary windings; the heat conductive tube is arranged in the gap of the windings for conducting the heat generated by the electrical coil to the outside of the electromagnetic apparatus. Furthermore, the conducting wire is electrically coupled to the electrical coil and transmits the input voltage and output voltage during the operation of electromagnetic apparatus.
    Type: Grant
    Filed: April 29, 2020
    Date of Patent: February 28, 2023
    Assignee: PHIHONG TECHNOLOGY CO., LTD.
    Inventors: Chun-Chen Chen, Jian-Hsieng Lee, Feng-Yi Lin, Pang-Chuan Chen
  • Publication number: 20230022898
    Abstract: In some implementations, a server device can generate configuration data for an application based on user engagement segments associated with a user of the application. For example, a server device can receive information identifying user engagement segments associated with a particular user. When the server device receives a request for configuration data for the application that identifies the particular user, the server device can obtain the engagement segment identifiers associated with the particular user. The server device can use the engagement segment identifiers to obtain segment configuration data for each engagement segment identifier, combine the segment configuration data into a combined configuration, and send the combined configuration to the application on the user device. The application can then determine what content to present and how to present the content on the user device based on the combined configuration data.
    Type: Application
    Filed: September 29, 2022
    Publication date: January 26, 2023
    Applicant: Apple Inc.
    Inventors: Balaji Ramachandran, Jean S. Metz, Collin D. Ruffenach, Christopher S. Schepman, Guillermo Ortiz, Feng Yi, Casey M. Dougherty, Martin J. Murret
  • Patent number: 11545547
    Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a gate structure, a first dielectric layer, a second dielectric layer, a first plug and two metal lines. The substrate has a shallow trench isolation and an active area, and the gate structure is disposed on the substrate to cover a boundary between the active area and the shallow trench isolation. The first dielectric layer is disposed on the substrate, to cover the gate structure, and the first plug is disposed in the first dielectric layer to directly in contact with a conductive layer of the gate structure and the active area. The second dielectric layer is disposed on the first dielectric layer, with the first plug and the gate being entirely covered by the first dielectric layer and the second dielectric layer. The two metal lines are disposed in the second dielectric layer.
    Type: Grant
    Filed: May 12, 2021
    Date of Patent: January 3, 2023
    Assignees: UNITED MICROELECTRONICS CORP., Fujian Jinhua Integrated Circuit Co., Ltd.
    Inventors: Feng-Yi Chang, Fu-Che Lee, Yi-Ching Chang, Kai-Lou Huang, Ying-Chih Lin, Gang-Yi Lin