Abstract: A semiconductor structure includes a substrate, a first semiconductor fin, a second semiconductor fin, and a first lightly-doped drain (LDD) region. The first semiconductor fin is disposed on the substrate. The first semiconductor fin has a top surface and sidewalls. The second semiconductor fin is disposed on the substrate. The first semiconductor fin and the second semiconductor fin are separated from each other at a nanoscale distance. The first lightly-doped drain (LDD) region is disposed at least in the top surface and the sidewalls of the first semiconductor fin.

Abstract: A downlink scheduling data monitoring method, a downlink scheduling data sending method, and an apparatus are provided. The method includes: starting a timer; and after it is determined that the timer expires, monitoring, by using a first discontinuous reception DRX monitoring cycle, downlink scheduling data sent by a base station, where duration of the first DRX monitoring cycle is in a unit of minute or hour. After it is determined that the timer expires, the downlink scheduling data is monitored by using the first DRX monitoring cycle whose duration is in a unit of minute or hour. In this way, not only power consumption is reduced, but also the downlink scheduling data can be monitored.

Abstract: An information transmission method and a related device are provided. The method includes: determining, by a base station, to send downlink information to P user equipments of at least one user equipment within a first time period; generating, by the base station, an indication field according to the determined P user equipments, where the indication field includes M bits, each of the at least one user equipment is corresponding to K bits of the M bits, the K bits are used to indicate whether the corresponding user equipment needs to receive and read the downlink information sent by the base station within the first time period, K is a positive integer greater than 1 and less than M, and P is an integer greater than or equal to 0; and sending, by the base station, the indication field to the at least one user equipment.

Abstract: A production method of edible biodegradable tableware uses a powder mixture to manufacture an edible biodegradable product by a manufacturing process, and the powder mixture includes a dry powder and a maltose, and the maltose is prepared according to the total weight of the dry powder in a ratio of 1:10˜100, and the production method has the effects of improving product stability, simplifying production process, increasing yield and efficiency, avoiding pollutions during production, and decomposing the used product in various environments.

Abstract: A method includes forming a first gate dielectric and a second gate dielectric over a first semiconductor region and a second semiconductor region, respectively, depositing a lanthanum-containing layer including a first portion and a second portion overlapping the first gate dielectric and the second gate dielectric, respectively, and depositing a hard mask including a first portion and a second portion overlapping the first portion and the second portion of the lanthanum-containing layer, respectively. The hard mask is free from both of titanium and tantalum. The method further includes forming a patterned etching mask to cover the first portion of the hard mask, with the second portion of the hard mask being exposed, removing the second portion of the hard mask and the second portion of the lanthanum-containing layer, and performing an anneal to drive lanthanum in the first portion of the lanthanum-containing layer into the first gate dielectric.

Abstract: An optical component includes an optical component body and an anti-reflection coating, where the anti-reflection coating is disposed on a surface of the optical component body through which light passes, the anti-reflection coating is configured to reduce reflectance of the surface, and the anti-reflection coating and the optical component body are integrally formed.

Abstract: A method of manufacturing a semiconductor device includes: providing a substrate comprising a surface; depositing a first dielectric layer and a second dielectric layer over the substrate; forming a dummy gate electrode over the second dielectric layer; forming a gate spacer surrounding the dummy gate electrode; forming lightly-doped source/drain (LDD) regions in the substrate on two sides of the gate spacer; forming source/drain regions in the respective LDD regions; removing the dummy gate electrode to form a replacement gate; forming an inter-layer dielectric (ILD) layer over the replacement gate and the source/drain regions; and performing a treatment by introducing a trap-repairing element into at least one of the gate spacer, the second dielectric layer, the surface and the LDD regions at a time before the forming of the source/drain regions or subsequent to the formation of the ILD layer.

Abstract: A heat exchanger adapted to support a plurality of battery cells on the outer surface thereof is disclosed. The heat exchanger includes first and second plates disposed in opposed, facing relation to one another such that portions of the inner surface of the first and second plates are spaced apart from one another. A manifold region is enclosed between the first and second plates for receiving an incoming heat transfer fluid. A main fluid flow region is enclosed between the first and second plates and is configured for receiving heat transfer fluid discharged from the manifold region and transmitting the heat transfer fluid through the heat exchanger to an outlet port. At least one bypass port for establishing fluid communication between the manifold region and the main fluid flow region is disposed at a location within the manifold region that is upstream of the manifold region outlet end.

Abstract: Methods to form vertically conducting and laterally conducting low-cost resistor structures utilizing dual-resistivity conductive materials are provided. The dual-resistivity conductive materials are deposited in openings in a dielectric layer using a single deposition process step. A high-resistivity ?-phase of tungsten is stabilized by pre-treating portions of the dielectric material with impurities. The portions of the dielectric material in which impurities are incorporated encompass regions laterally adjacent to where high-resistivity ?-W is desired. During a subsequent tungsten deposition step the impurities may out-diffuse and get incorporated in the tungsten, thereby stabilizing the metal in the high-resistivity ?-W phase. The ?-W converts to a low-resistivity ?-phase of tungsten in the regions not pre-treated with impurities.

Abstract: An apparatus for charging area detection is disclosed, and relates to the technical field of wireless charging. The apparatus for charging area detection includes a plurality of first induction coils fixedly disposed in a preset manner and a positioning auxiliary circuit connected to the plurality of first induction coils, wherein the positioning auxiliary circuit indicates a relative position of a center of a magnetic field according to induced voltages induced by the first induction coils. Therefore, the center of an alternating magnetic field can be determined more conveniently and quickly, thereby facilitating the improvement of the wireless charging efficiency and the use experience of a user.

Abstract: This application provides a resource scheduling method, an apparatus, and a system, and relates to the field of communications technologies, to meet scheduling requirements of data transmitted on different logical channels. The method includes: sending, by a terminal device, a BSR to an access network device, where the BSR carries first indication information, and the first indication information is used by the access network device to determine a scheduling mode corresponding to a first logical channel; receiving, by the terminal device, a first uplink grant resource sent by the access network device, where the first uplink grant resource is scheduled by the access network device based on the BSR in the scheduling mode; and sending, by the terminal device, to-be-sent data on the first logical channel to the access network device by using the first uplink grant resource.

Abstract: A method includes transferring a tool monitoring device to a load port of a tool. An environmental parameter of the load port is monitored by the tool monitoring device. The tool monitoring device is removed from the load port after the environmental parameter of the load port is monitored. A door of the tool in front of the load port is closed. The door of the tool is kept closed during a period from a time of transferring the tool monitoring device to the load port to a time of removing the tool monitoring device from the load port.

Abstract: In the method, the network device sends first signaling to a first terminal device, the first signaling is used to instruct the first terminal device to perform, on an unlicensed spectrum, a listen before talk LBT procedure used for occupying an unlicensed frequency band, and send uplink information within a first time length on the unlicensed frequency band; the network device receives, on the unlicensed spectrum, the uplink information from the first terminal device within the first time length, where the first time length is a part of maximum channel occupancy time obtained by the first terminal device on the unlicensed spectrum, and the first time length is less than the maximum channel occupancy time.

Abstract: A time synchronization method and an apparatus are disclosed. The method includes: receiving, by a terminal device, a first time sent by an access network device; obtaining a first transmission delay; obtaining a fourth time based on the first transmission delay and the first time; and synchronizing a time of the terminal device based on the fourth time.

Abstract: Disclosed are a display panel and a display device. The display panel includes a substrate and multiple organic light-emitting units located in the display region on a first side of the substrate, where an area of at least one of organic light-emitting units in the second display region is smaller than an area of each of organic light-emitting units with a same light-emitting color in the first display region, and/or, density of the organic light-emitting units in the first display region is greater than density of the organic light-emitting units in the second display region. The second display region includes at least one quantum dot light-emitting unit, which does not overlap the organic light-emitting units; and each of the at least one quantum dot light-emitting unit emits light of a same color as at least one of the organic light-emitting units located in the second display region.

Abstract: This application provides example data packet transmission methods and example communications apparatuses. One example method includes receiving a data packet, where the data packet is in an undelivered state. The data packet can then be delivered during running of a reordering timer upon an arrival of a first delay cut-off moment corresponding to the data packet or an arrival of a second delay cut-off moment of an additional data packet before the data packet in a reordering window.

Abstract: A wireless power transmitting terminal and control method are disclosed. The wireless power transmitting terminal including an inverter circuit, a resonance circuit and a controller, wherein in a frequency detection state, an alternating current of the inverter circuit is controlled to switch between different candidate frequencies, so as to determine a resonance frequency and a maximum peak value of an electrical parameter of the alternating current at the resonance frequency, and determine an operating state of the power transmitting terminal according to the change of the maximum peak value. Therefore, the wireless power transmitting terminal can dynamically adjust in real time a preset operating state thereof, thereby improving the device adaptability, and avoiding the damage of the device to be charged.

Abstract: A communication method and a related device are described. A base station includes a plurality of antenna arrays and a baseband processing unit. The plurality of antenna arrays are distributed around a communication area and are all connected to the baseband processing unit. A terminal in the communication area is configured to perform signal transmission with the antenna arrays, to implement communication with the baseband processing unit. When an obstacle exists between the terminal and a primary antenna array performing signal transmission with the terminal, controlling, by the base station through the baseband processing unit, a secondary antenna array to perform signal transmission with the terminal.

Abstract: A method comprises adding reagent I to a sample to be detected, incubating to obtain a first detection sample, and detecting to obtain a first absorbance value A1 of the sample to be detected; adding reagent II to the first detection sample, incubating to obtain a second detection sample, and detecting to obtain a second absorbance value A2 of the sample to be detected; adding reagent I to a standard sample, incubating to obtain a first detection standard, and detecting to obtain a first absorbance value B1 of the standard; adding reagent II to the first detection standard, incubating to obtain a second detection standard, and detecting to obtain a second absorbance value B2 of the standard; and using A1 and A2, and B1 and B2 to obtain a concentration level of complement factor H in the sample to be detected.

Abstract: Semiconductor device and the manufacturing method thereof are disclosed. An exemplary semiconductor device comprises a first semiconductor stack and a second semiconductor stack over a substrate, wherein each of the first and second semiconductor stacks includes semiconductor layers stacked up and separated from each other; a dummy spacer between the first and second semiconductor stacks, wherein the dummy spacer contacts a first sidewall of each semiconductor layer of the first and second semiconductor stacks; and a gate structure wrapping a second sidewall, a top surface, and a bottom surface of each semiconductor layer of the first and second semiconductor stacks.