Abstract: The device has a fluid inlet; a filtering compartment, connected to the fluid inlet and accommodating a filtering matrix in presence of adsorption agents; a fluidic circuit connected downstream of the filtering compartment and including a discharge circuit and a loading circuit; a discharge chamber, connected downstream of the discharge circuit; a preparation outlet, connected downstream of the loading circuit; and suction pumps, connected to the fluidic circuit and configured so as to fluidically connect the filtering compartment alternatively to the discharge circuit or to the loading circuit.

Abstract: A device for detecting the concentration of biological materials is formed in a body having a plurality of fluidic paths connectable to a multi-microbalance structure carrying a plurality of microbalances, each microbalance having a sensitive portion facing a reaction chamber. The body and the multi-microbalance structure are configured to be mechanically coupled together and each microbalance is configured to be coupled to a respective fluidic path. Each fluidic path includes an inlet, a duct and a liquid waste, each duct being configured to be coupled with a respective reaction chamber. The plurality of fluidic paths and microbalances form at least one first and one second reference cells and one first sample cell.

Abstract: A fluidic cartridge for detecting chemicals, formed by a casing, hermetically housing an integrated device having a plurality of detecting regions to bind with target chemicals; part of a supporting element, bearing the integrated device; a reaction chamber, facing the detecting regions; a sample feeding hole and a washing feeding hole, self-sealingly closed; fluidic paths, which connect the sample feeding and washing feeding holes to the reaction chamber; and a waste reservoir, which may be fluidically connected to the reaction chamber by valve elements that may be controlled from outside. The integrated device is moreover connected to an interface unit carried by the supporting element, electrically connected to the integrated device and including at least one signal processing stage and external contact regions.

Abstract: A device for detecting the concentration of biological materials, is formed in a body having a plurality of fluidic paths connectable to a multi-microbalance structure carrying a plurality of microbalances, each microbalance having a sensitive portion facing a reaction chamber. The body and the multi-microbalance structure are configured to be mechanically coupled together and each microbalance is configured to be coupled to a respective fluidic path. Each fluidic path includes an inlet, a duct and a liquid waste, each duct being configured to be coupled with a respective reaction chamber. The plurality of fluidic paths and microbalances form at least one first and one second reference cells and one first sample cell.

Abstract: A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.

Abstract: A hybridization detecting device, wherein a probe cell has a body of semiconductor material forming a diaphragm, a first electrode on the diaphragm, a piezoelectric region on the first electrode, a second electrode on the piezoelectric region and a detection layer on the second electrode. The body accommodates a buried cavity downwardly delimiting the diaphragm.

Abstract: A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.

Abstract: The device has a fluid inlet; a filtering compartment, connected to the fluid inlet and accommodating a filtering matrix in presence of adsorption agents; a fluidic circuit connected downstream of the filtering compartment and including a discharge circuit and a loading circuit; a discharge chamber, connected downstream of the discharge circuit; a preparation outlet, connected downstream of the loading circuit; and suction pumps, connected to the fluidic circuit and configured so as to fluidically connect the filtering compartment alternatively to the discharge circuit or to the loading circuit.

Abstract: A cartridge-like chemical sensor is formed by a housing having a base and a cover fixed to the base and provided with an input opening, an output hole and a channel for a gas to be analyzed. The channel extends in the cover between the input opening and the output hole and faces a printed circuit board carrying an integrated circuit having a sensitive region open toward the channel and of a material capable to bind with target chemicals in the gas to be analyzed. A fan is arranged in the housing, downstream of the integrated device, for sucking the gas after being analyzed, and is part of a thermal control system for the integrated circuit.

Abstract: An electronic microbalance made in a semiconductor body accommodating an oscillating circuit adjacent to a diaphragm. A stack formed by a first electrode, a second electrode, and a piezoelectric region arranged between the first and the second electrode extends above the diaphragm. Any substance that deposits on the stack causes a change in the mass of the microbalance and thus in the resonance frequency of a resonator formed by the microbalance and by the oscillating circuit and can thus be detected electronically. A chemical sensor is obtained by forming a sensitive layer of a material suitable for binding to target chemicals on the stack. The sensitivity of the microbalance can be increased by making the first electrode of molybdenum so as to increase the piezoelectric characteristics of the piezoelectric region.

Abstract: A method for the formation of buried cavities within a semiconductor body envisages the steps of: providing a wafer having a bulk region made of semiconductor material; digging, in the bulk region, trenches delimiting between them walls of semiconductor material; forming a closing layer for closing the trenches in the presence of a deoxidizing atmosphere so as to englobe the deoxidizing atmosphere within the trenches; and carrying out a thermal treatment such as to cause migration of the semiconductor material of the walls and to form a buried cavity. Furthermore, before the thermal treatment is carried out, a barrier layer that is substantially impermeable to hydrogen is formed on the closing layer on top of the trenches.

Abstract: A device for detecting the concentration of biological materials, is formed in a body having a plurality of fluidic paths connectable to a multi-microbalance structure carrying a plurality of microbalances, each microbalance having a sensitive portion facing a reaction chamber. The body and the multi-microbalance structure are configured to be mechanically coupled together and each microbalance is configured to be coupled to a respective fluidic path. Each fluidic path includes an inlet, a duct and a liquid waste, each duct being configured to be coupled with a respective reaction chamber. The plurality of fluidic paths and microbalances form at least one first and one second reference cells and one first sample cell.

Abstract: A capacitive semiconductor pressure sensor, comprising: a bulk region of semiconductor material; a buried cavity overlying a first part of the bulk region; and a membrane suspended above said buried cavity, wherein, said bulk region and said membrane are formed in a monolithic substrate, and in that said monolithic substrate carries structures for transducing the deflection of said membrane into electrical signals, wherein said bulk region and said membrane form electrodes of a capacitive sensing element, and said transducer structures comprise contact structures in electrical contact with said membrane and with said bulk region.

Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.

Abstract: A fluidic cartridge for detecting chemicals, formed by a casing, hermetically housing an integrated device having a plurality of detecting regions to bind with target chemicals; part of a supporting element, bearing the integrated device; a reaction chamber, facing the detecting regions; a sample feeding hole and a washing feeding hole, self-sealingly closed; fluidic paths, which connect the sample feeding and washing feeding holes to the reaction chamber; and a waste reservoir, which may be fluidically connected to the reaction chamber by valve elements that may be controlled from outside. The integrated device is moreover connected to an interface unit carried by the supporting element, electrically connected to the integrated device and including at least one signal processing stage and external contact regions.

Abstract: A cartridge-like chemical sensor is formed by a housing having a base and a cover fixed to the base and provided with an input opening, an output hole and a channel for a gas to be analyzed. The channel extends in the cover between the input opening and the output hole and faces a printed circuit board carrying an integrated circuit having a sensitive region open toward the channel and of a material capable to bind with target chemicals in the gas to be analyzed. A fan is arranged in the housing, downstream of the integrated device, for sucking the gas after being analyzed, and is part of a thermal control system for the integrated circuit.

Abstract: An integrated differential pressure sensor includes, in a monolithic body of semiconductor material, a first face and a second face, a cavity extending at a distance from the first face and delimited therewith by a flexible membrane formed in part by epitaxial material from the monolithic body and in part by annealed epitaxial material from the monolithic body, an access passage in fluid communication with the cavity, and in the flexible membrane at least one transduction element configured so as to convert a deformation of the flexible membrane into electrical signals. The cavity is formed in a position set at a distance from the second face and is delimited at the second face with a portion of the monolithic body.

Abstract: A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.

Abstract: A process for manufacturing a semiconductor wafer including SOI-insulation wells includes forming, in a die region of a semiconductor body, buried cavities and semiconductor structural elements, which traverse the buried cavities and are distributed in the die region. The process moreover includes the step of oxidizing selectively first adjacent semiconductor structural elements, arranged inside a closed region, and preventing oxidation of second semiconductor structural elements outside the closed region, so as to form a die buried dielectric layer selectively inside the closed region.

Abstract: A process for manufacturing a suspended structure of semiconductor material envisages the steps of: providing a monolithic body of semiconductor material having a front face; forming a buried cavity within the monolithic body, extending at a distance from the front face and delimiting, with the front face, a surface region of the monolithic body, said surface region having a first thickness; carrying out a thickening thermal treatment such as to cause a migration of semiconductor material of the monolithic body towards the surface region and thus form a suspended structure above the buried cavity, the suspended structure having a second thickness greater than the first thickness. The thickening thermal treatment is an annealing treatment.