Abstract: A silicon carbide chip includes a first main surface, a second main surface, and a side face. An angle ? between the side face and a horizontal plane measured in the silicon carbide material is more than 78°, the angle ? being measured in a region adjacent to the second main surface. Also described is a method for manufacturing the silicon carbide chip.

Abstract: An electrical interconnect structure includes a bond pad having a substantially planar bonding surface, and a solder enhancing structure that is disposed on the bonding surface and includes a plurality of raised spokes that are each elevated from the bonding surface. Each of the raised spokes has a lower wettability relative to a liquefied solder material than the bonding surface. Each of the raised spokes extend radially outward from a center of the solder enhancing structure.

Abstract: An electrical interconnect structure includes a bond pad having a substantially planar bonding surface, and a solder enhancing structure that is disposed on the bonding surface and includes a plurality of raised spokes that are each elevated from the bonding surface. Each of the raised spokes has a lower wettability relative to a liquefied solder material than the bonding surface. Each of the raised spokes extend radially outward from a center of the solder enhancing structure.

Abstract: A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

Abstract: A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.

Abstract: A semiconductor chip assembly includes a semiconductor chip and a pyrolytic graphite element that is an electrode that is electrically connected to and provides electrical conduction of current from the chip during operation of the chip.

Abstract: A semiconductor package includes a first semiconductor chip, a second semiconductor chip and a ribbon. The ribbon includes a first metal layer and a second metal layer. The first metal layer is welded to the first chip and the second metal layer is attached to the second chip.

Abstract: A semiconductor package includes a first semiconductor chip, a second semiconductor chip and a ribbon. The ribbon includes a first metal layer and a second metal layer. The first metal layer is welded to the first chip and the second metal layer is attached to the second chip.

Abstract: A semiconductor chip assembly includes a semiconductor chip and a pyrolytic graphite element that is an electrode that is electrically connected to and provides electrical conduction of current from the chip during operation of the chip.

Abstract: This application relates to a semiconductor device comprising: a carrier comprising a chip island and at least one first external contact element; only one semiconductor chip, wherein the semiconductor chip comprises a first electrode on a first surface and a second electrode on a second surface opposite to the first surface and wherein the first electrode is attached to the chip island; and a metal structure comprising a plate region attached to the second electrode and a connection region attached to the at least one first external contact element, wherein the plate region extends laterally beyond the edges of at least two sides of the second surface of the semiconductor chip.

Abstract: The handle of wheelbarrow is commonly produced separately before they are welded together to form the entire handle. The process involves more steps and equipment, which has increased the producing cost relatively. The present invention provides a simpler process to fabricate the handle, where the narrow portion at the end portion part of the handle is integrally formed with the body portion of the handle for a wheelbarrow.

Abstract: The present invention is an improved wheelbarrow with a releasable container connected to a releasable locking system for easy pouring and requiring small leverage to lift the container. The improved wheelbarrow comprising a lever mounted directly on the handle part of the wheelbarrow support frame for easily release the container during removing load process. The lever is joined to a pivotal hook which is mounted on the body of the support frame by a cable. The container includes a fixture on the lower part rear end of the container. This is to secure the container to the releasable locking system when in loading or moving position. With the grasping of the lever, a tension force is formed and thus pulled the pivotal hook backward away from the hooked position. This releases the container from its secured position and can be easily lifted for emptying purposes.