Abstract: An engineered floor board or wood panel for the fabrication thereof is comprised of a thin top wood layer fabricated from a quality wood material. The top wood layer is glued to a core layer wood product having a grain orientation disposed transverse to the longitudinal axis of the top wood layer. A base wood layer is fabricated from oriented strand board (OSB) which is glued to the bottom of the core layer. The base wood layer is fabricated from a single sheet having wood particles and fibers oriented in at least two layers with at least a top layer having its wood particles and fibers generally oriented along the longitudinal axis of the top wood layer and transverse to use core layer to substantially prevent displacement and deformation of the core layer caused by expansion and retraction thereof and thereby preventing deformations in the top wood layer.

Abstract: The present invention relates to a flexible sheet of wood strips for use in the fabrication of engineered floor boards or wood sheets and including the machine and method of manufacture of the flexible sheet of wood strips. The wood strips provide a wood floor which has much more stability than a solid wood plank which is much more affected by the temperature in a room and the moisture under the floor board. Also solid wood planks are much more expensive than engineered wood planks where only a very thin layer of quality wood material is utilized. The transverse wood strips are constructed of inferior wood material. Two or more treads of flexible material may be secured transversely to the wood strips to provide additional retention of the wood strips in the flexible sheet.

Abstract: The present relates to a washable interconnection patch, a connection assembly, and an intelligent washable garment equipped therewith. The patch receives and interconnects wires to a cable. The patch comprises two matching pieces interlocking together so as to define there between two opposite apertures. One of the apertures is adapted to receive and hold the wires, and the other aperture is adapted to receive and hold the cable. One of the two matching pieces defines on an interior face a channel to interconnect the wires to the cables. The connection assembly comprises a male connector and a female connector. The male connector defines a series of independent connection points along a length thereof. The female connector is adapted to receive the male connector, and defines along a length of an inner surface thereof a series of contact points. When the male connector is inserted within the female connector, the connection points and the contact points are aligned and in contact together.

Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type, including: a read region of the second conductivity type; and, adjacent to the read region, a storage region of the first conductivity type topped with a first insulated gate electrode. The first electrode is arranged to receive, in a first operating mode, a first voltage causing the inversion of the conductivity type of the storage region, so that the storage region behaves as an extension of the read region, and, in a second operating mode, a second voltage causing no inversion of the storage region.

Abstract: An image sensor cell formed inside and on top of a substrate of a first conductivity type includes: a storage region of the second conductivity type; a read region of the second conductivity type; a transfer region located between the storage region and the read region; and a transfer gate topping the transfer region and which does not or does not totally top the storage region. The transfer region comprises a first area of the first conductivity type in the vicinity of the storage region, and a second area of the second conductivity type extending between the first area and the read region.

Abstract: A charge-coupled unit formed in a semiconductor substrate and including an array of identical electrodes forming rows and columns, wherein: each electrode extends in a cavity with insulated walls formed of a groove, oriented along a row, dug into the substrate thickness, and including, at one of its ends, a protrusion extending towards at least one adjacent row.

Abstract: The described method of fabricating a composite engineered wood material floor board, having a top wood layer secured to a wood material substrate layer, minimizes the effect of telegraphy in the resulting floor board. The method includes selecting a top wood layer from a top surface quality wood material having a thickness of between 1 mm to 8 mm, and selecting a substrate wood material layer having a thickness of between 6 mm and a thickness ratio of 1 to no more than 10 between the top wood layer and the substrate wood material layer. A plurality of transverse rectangular spaced-apart grooves are also formed in a bottom surface of said wood substrate layer. The ratio between the depth of said grooves and the thickness of the substrate wood material has an impact on telegraphy of said grooves in said top wood layer and is therefore selected accordingly.

Abstract: A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.

Abstract: An integrated imaging device includes a silicon layer provided over a dielectric multilayer. The dielectric multilayer includes a top silicon-dioxide layer, an intermediate silicon-nitride layer and a bottom silicon-dioxide layer. Imaging circuitry is formed at a frontside of the silicon layer. An isolating structure surrounds the imaging circuitry and extends from the frontside through the silicon layer and top silicon-dioxide layer into and terminating within the intermediate silicon-nitride layer. A filter for the imaging circuitry is mounted to a backside of the bottom silicon-dioxide layer. The isolating structure is formed by a trench filled with a dielectric material.

Abstract: A composite engineered wood material piece and its method of fabrication is described. The wood material piece comprises a top wood layer secured to a substrate layer by a binder. The substrate layer has a plurality of grooves formed therein from a bottom surface thereof to enhance the flexibility of the wood material piece. The grooves are spaced from one another by one or more predetermined spaced intervals and have one or more predetermined depth and width calculated to substantially eliminate the effects of telegraphy of the grooves on a top finished surface of the top wood layer.

Abstract: A method of resetting a photosite is disclosed. Photogenerated charges accumulated in the photosite are reset by recombining the photogenerated charges with charges of opposite polarity.

Abstract: A method for forming a back-side illuminated image sensor, including the steps of: a) forming, from the front surface, doped polysilicon regions, of a conductivity type opposite to that of the substrate, extending in depth orthogonally to the front surface and emerging into the first layer; b) thinning the substrate from its rear surface to reach the polysilicon regions, while keeping a strip of the first layer; c) depositing, on the rear surface of the thinned substrate, a doped amorphous silicon layer, of a conductivity type opposite to that of the substrate; and d) annealing at a temperature capable of transforming the amorphous silicon layer into a crystallized layer.

Abstract: An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.

Abstract: An image sensor arranged inside and on top of a semiconductor substrate, having a plurality of pixels, each including: a photosensitive area, a read area, and a storage area extending between the photosensitive area and the read area; at least one first insulated vertical electrode extending in the substrate between the photosensitive area and the storage area; and at least one second insulated vertical electrode extending in the substrate between the storage area and the read area.

Abstract: Analyzing an application executing on a target device. An application may be executed on a target device. Low cost measurement may be gathered regarding the application executing on the target device. In response to a trigger, high cost measurement data may be gathered regarding the application executing on the target device. The high cost measurement data may include graphics commands provided by the application. The graphics commands and related information may be stored and provided to a host. The host may modify the graphics commands to perform experiments to determine performance issues of the application executing on the target device. The host may determine whether the performance is limited by the CPU or the GPU and may determine specific operations that are causing performance issues. The host may provide suggestions for overcoming the performance issues.

Abstract: An image sensor including at least one photodiode and at least one transistor formed in and on a silicon substrate, the assembly of the photodiode and of the transistor being surrounded with a heavily-doped insulating wall, wherein the silicon substrate has a crystal orientation (110).

Abstract: A structure comprising at least one DTI-type insulating trench in a substrate, the trench being at the periphery of at least one active area of the substrate forming a pixel, the insulating trench including a cavity filled with a dielectric material, the internal walls of the cavity being covered with a layer made of a boron-doped material.

Abstract: A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) forming, from the front surface of the substrate, areas of same conductivity type as the substrate but of higher doping level, extending deep under the front surface, these areas being bordered with insulating regions orthogonal to the front surface; b) thinning the substrate from the rear surface to the vicinity of these areas and all the way to the insulating regions; c) partially hollowing out the insulating regions on the rear to surface side; and d) performing a laser surface anneal of the rear surface of the substrate.

Abstract: A charge transfer device formed in a semiconductor substrate and including an array of electrodes forming rows and columns, wherein: the electrodes extend, in rows, in successive grooves with insulated walls, disposed in the substrate thickness and parallel to the charge transfer direction.

Abstract: A method for forming a back-side illuminated image sensor from a semiconductor substrate, including the steps of: a) thinning the substrate from its rear surface; b) depositing, on the rear surface of the thinned substrate, an amorphous silicon layer of same conductivity type as the substrate but of higher doping level; and c) annealing at a temperature enabling to recrystallized the amorphous silicon to stabilize it.