Patents by Inventor Francesco Lemmi
Francesco Lemmi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8999851Abstract: The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.Type: GrantFiled: December 9, 2008Date of Patent: April 7, 2015Assignee: OneD Material LLCInventors: Francisco Leon, Francesco Lemmi, Jeffrey Miller, David Dutton, David P. Stumbo
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Publication number: 20120009721Abstract: A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.Type: ApplicationFiled: September 22, 2011Publication date: January 12, 2012Inventors: Malcolm Abbott, Maxim Kelman, Francesco Lemmi, Andreas Meisel, Dmitry Poplavskyy, Mason Terry, Karel Vanheusden
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Publication number: 20110091731Abstract: Native Group IV semiconductor thin films formed from coating substrates using formulations of Group IV nanoparticles are described. Such native Group IV semiconductor thin films leverage the vast historical knowledge of Group IV semiconductor materials and at the same time exploit the advantages of Group IV semiconductor nanoparticles for producing novel thin films which may be readily integrated into a number of devices.Type: ApplicationFiled: December 14, 2010Publication date: April 21, 2011Inventors: Maxim Kelman, Pingrong Yu, Manikandan Jayaraman, Dmitry Poplavskyy, David Jurbergs, Francesco Lemmi, Homer Antoniadis
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Publication number: 20100275982Abstract: A device for generating electricity from solar radiation is disclosed. The device includes a wafer doped with a first dopant, the wafer including a front-side and a back-side, wherein the front-side is configured to be exposed to the solar radiation. The device also includes a fused Group IV nanoparticle thin film deposited on the front-side, wherein the nanoparticle thin film includes a second dopant, wherein the second dopant is a counter dopant. The device further includes a first electrode deposited on the nanoparticle thin film, and a second electrode deposited on the back-side, wherein when solar radiation is applied to the front-side, an electrical current is produced.Type: ApplicationFiled: February 12, 2008Publication date: November 4, 2010Inventors: Malcolm Abbott, Maxim Kelman, Francesco Lemmi, Andreas Meisel, Dmitry Poplavskyy, Mason Terry, Karel Vanheusden
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Publication number: 20100237288Abstract: Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.Type: ApplicationFiled: May 14, 2010Publication date: September 23, 2010Applicant: NANOSYS, INC.Inventors: Cheri X.Y. Pereira, Francesco Lemmi, David P. Stumbo
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Patent number: 7776724Abstract: A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10?7 Torr and about 1×10?4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.Type: GrantFiled: December 4, 2007Date of Patent: August 17, 2010Assignee: Innovalight, Inc.Inventors: Francesco Lemmi, Elena V. Rogojina, Pingrong Yu, David Jurbergs, Homer Antoniadis, Maxim Kelman
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Patent number: 7767102Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.Type: GrantFiled: August 16, 2007Date of Patent: August 3, 2010Assignee: Nanosys, Inc.Inventors: Francesco Lemmi, David P. Stumbo
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Patent number: 7745498Abstract: Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution.Type: GrantFiled: April 6, 2006Date of Patent: June 29, 2010Assignee: Nanosys, Inc.Inventors: Cheri X. Y. Pereira, Francesco Lemmi, David P. Stumbo
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Patent number: 7741197Abstract: The present invention is directed to methods to harvest, integrate and exploit nanomaterials, and particularly elongated nanowire materials. The invention provides methods for harvesting nanowires that include selectively etching a sacrificial layer placed on a nanowire growth substrate to remove nanowires. The invention also provides methods for integrating nanowires into electronic devices that include placing an outer surface of a cylinder in contact with a fluid suspension of nanowires and rolling the nanowire coated cylinder to deposit nanowires onto a surface. Methods are also provided to deposit nanowires using an ink-jet printer or an aperture to align nanowires. Additional aspects of the invention provide methods for preventing gate shorts in nanowire based transistors. Additional methods for harvesting and integrating nanowires are provided.Type: GrantFiled: December 20, 2006Date of Patent: June 22, 2010Assignee: Nanosys, Inc.Inventors: Xiangfeng Duan, Paul Bernatis, Alice Fischer-Colbrie, James M. Hamilton, Francesco Lemmi, Yaoling Pan, J. Wallace Parce, Cheri X. Y. Pereira, David P. Stumbo
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Patent number: 7704866Abstract: A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.Type: GrantFiled: March 18, 2008Date of Patent: April 27, 2010Assignee: Innovalight, Inc.Inventors: Karel Vanheusden, Francesco Lemmi, Dmitry Poplavskyy, Mason Terry, Malcolm Abbott
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Publication number: 20090239330Abstract: A method for forming a contact to a substrate is disclosed. The method includes providing a substrate, the substrate being doped with a first dopant; and diffusing a second dopant into at least a first side of the substrate to form a second dopant region, the first side further including a first side surface area. The method also includes forming a dielectric layer on the first side of the substrate. The method further includes forming a set of composite layer regions on the dielectric layer, wherein each composite layer region of the set of composite layer regions further includes a set of Group IV semiconductor nanoparticles and a set of metal particles. The method also includes heating the set of composite layer regions to a first temperature, wherein at least some composite layer regions of the set of composite layer regions etch through the dielectric layer and form a set of contacts with the second dopant region.Type: ApplicationFiled: March 18, 2008Publication date: September 24, 2009Inventors: Karel Vanheusden, Francesco Lemmi, Dmitry Poplavskyy, Mason Terry, Malcolm Abbott
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Publication number: 20090230380Abstract: The present invention relates to methods of forming substrate elements, including semiconductor elements such as nanowires, transistors and other structures, as well as the elements formed by such methods.Type: ApplicationFiled: December 9, 2008Publication date: September 17, 2009Applicant: NANOSYS, Inc.Inventors: Francisco LEON, Francesco LEMMI, Jeffrey MILLER, David DUTTON, David P. STUMBO
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Patent number: 7521340Abstract: A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.Type: GrantFiled: December 4, 2007Date of Patent: April 21, 2009Assignee: Innovalight, Inc.Inventors: Francesco Lemmi, Elena V. Rogojina, Pingrong Yu, David Jurbergs, Homer Antoniadis, Maxim Kelman
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Publication number: 20090053878Abstract: A method for creating a Group IV semiconductor densified thin film is disclosed. The method includes applying a colloidal dispersion to a substrate, wherein the colloidal dispersion includes a plurality of Group IV semiconductor nanoparticles and an organic solvent. The method also includes removing the organic solvent by applying a first temperature for a first time period to form a Group IV semiconductor non-densified thin film; and heating the Group IV semiconductor non-densified thin film to a second temperature for a second time period, wherein the second temperature is a pre-heating target temperature. The method further includes heating the Group IV semiconductor non-densified thin film to a third temperature for a third time period with a flash lamp apparatus, wherein the third temperature is equal to or greater than a sintering temperature, wherein a Group IV semiconductor densified thin film is created.Type: ApplicationFiled: October 19, 2007Publication date: February 26, 2009Inventors: Maxim Kelman, Francesco Lemmi
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Publication number: 20080305619Abstract: A method forming a Group IV semiconductor junction on a substrate is disclosed. The method includes depositing a first set Group IV semiconductor nanoparticles on the substrate. The method also includes applying a first laser at a first laser wavelength, a first fluence, a first pulse duration, a first number of repetitions, and a first repetition rate to the first set Group IV semiconductor nanoparticles to form a first densified film with a first thickness, wherein the first laser wavelength and the first fluence are selected to limit a first depth profile of the first laser to the first thickness. The method further includes depositing a second set Group IV semiconductor nanoparticles on the first densified film.Type: ApplicationFiled: May 2, 2008Publication date: December 11, 2008Inventors: Francesco Lemmi, Andreas Meisel, Homer Antoniadis
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Publication number: 20080182390Abstract: A method of forming a densified nanoparticle thin film is disclosed. The method includes positioning a substrate in a first chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed; and positioning the substrate in a second chamber, the second chamber having a pressure of between about 1×10?7 Torr and about 1×10?4 Torr. The method further includes depositing on the porous compact a dielectric material; wherein the densified nanoparticle thin film is formed.Type: ApplicationFiled: December 4, 2007Publication date: July 31, 2008Inventors: Francesco Lemmi, Elena V. Rogojina, Pingrong Yu, David Jurbergs, Homer Antoniadis, Maxim Kelman
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Publication number: 20080171425Abstract: A method of forming an epitaxial layer in a chamber is disclosed. The method includes positioning a Group IV semiconductor substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV nanoparticles and a solvent, wherein a porous compact is formed. The method also includes heating the porous compact to a temperature of between about 100° C. and about 1100° C., and for a time period of between about 5 minutes to about 60 minutes with a heating apparatus, wherein the epitaxial layer is formed.Type: ApplicationFiled: December 12, 2007Publication date: July 17, 2008Inventors: Dmitry Poplavskyy, Maxim Kelman, Francesco Lemmi, Andreas Meisel
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Publication number: 20080146005Abstract: A method of forming a densified nanoparticle thin film in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes exposing the porous compact to an HF vapor for a second time period of between about 2 minutes and about 20 minutes, and heating the porous compact for a second temperature of between about 25° C. and about 60° C.; and heating the porous compact to a third temperature between about 100° C. and about 1000° C., and for a third time period of between about 5 minutes and about 10 hours; wherein the densified nanoparticle thin film is formed.Type: ApplicationFiled: December 4, 2007Publication date: June 19, 2008Inventors: Francesco Lemmi, Elena V. Rogojina, Pingrong Yu, David Jurbergs, Homer Antoniadis, Maxim Kelman
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Publication number: 20080138966Abstract: A method of fabricating a densified nanoparticle thin film with a set of occluded pores in a chamber is disclosed. The method includes positioning a substrate in the chamber; and depositing a nanoparticle ink, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method further includes heating the nanoparticle ink to a first temperature between about 30° C. and about 300° C., and for a first time period between about 5 minutes and about 60 minutes, wherein the solvent is substantially removed, and a porous compact with a set of pores is formed. The method also includes heating the porous compact to a second temperature between about 300° C. and about 900° C., and for a second time period of between about 5 minutes and about 15 minutes, and flowing a precursor gas into the chamber at a partial pressure between about 0.Type: ApplicationFiled: November 14, 2007Publication date: June 12, 2008Inventors: Elena V. Rogojina, Francesco Lemmi, Maxim Kelman, Xuegeng Li, Pingrong Yu
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Publication number: 20080078441Abstract: A device for generating electricity from solar radiation is disclosed. The device includes a substrate; an insulating layer formed above the substrate; and a first electrode formed above the insulating layer. The device also includes a first doped Group IV nanoparticle thin film deposited on the first electrode; and a second doped Group IV nanoparticle thin film deposited on the first doped Group IV nanoparticle thin film. The device further includes a third doped Group IV nanoparticle thin film deposited on the second doped Group IV nanoparticle thin film; a fourth doped Group IV nanoparticle thin film deposited on the third doped Group IV nanoparticle thin film; and, a second electrode formed on the fourth doped Group IV nanoparticle thin film. Wherein, when solar radiation is applied to the fourth doped Group IV nanoparticle thin film, an electrical current is produced.Type: ApplicationFiled: September 19, 2007Publication date: April 3, 2008Inventors: Dmitry Poplavskyy, Homer Antoniadis, David Jurbergs, Maxim Kelman, Francesco Lemmi, Pingrong Yu