Patents by Inventor Francesco Lemmi

Francesco Lemmi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Continuous amorphous silicon layer sensors using sealed metal back contact
    Patent number: 6300648
    Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
    Type: Grant
    Filed: December 28, 1999
    Date of Patent: October 9, 2001
    Assignee: Xerox Corporation
    Inventors: Ping Mei, Jeng Ping Lu, Francesco Lemmi, Robert A. Street, James B. Boyce
  • Continuous amorphous silicon layer sensors using doped poly-silicon back contact
    Patent number: 6288435
    Abstract: A method and apparatus for reducing vertical leakage current in a high fill factor sensor array is described. Reduction of vertical leakage current is achieved by eliminating Schottky junction interfaces that occur between metal back contacts and intrinsic amorphous silicon layers. One method of eliminating the Schottky junction uses an extra wide region of N doped amorphous silicon to serve as a buffer between the metal back contact and the intrinsic amorphous silicon layer. Another method of eliminating the Schottky junction completely replaces the metal back contact and the N doped amorphous silicon layer with a substitute material such as N doped poly-silicon.
    Type: Grant
    Filed: December 28, 1999
    Date of Patent: September 11, 2001
    Assignee: Xerox Corporation
    Inventors: Ping Mei, Jeng Ping Lu, Francesco Lemmi, Robert A. Street, James B. Boyce