Abstract: An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

Abstract: A method of electrically isolating and operating electro-optical components integrated in a monolithic semiconductor photonic chip, such as an EML or PIC chip. A bias, VC, is applied to the isolation region so that any parasitical current path developed between adjacent active or passive optical components, now separated by an isolation region, is established through the electrical isolation region and clamped to the bias, VC. The applied bias, VC, may be a positive bias, a negative bias, or a zero or a ground bias. The electrical isolation regions are formed by spatial current blocking regions formed at adjacent sides of the electrical isolations region transverse to a direction of light propagation through the optical components, or between the electrical isolation regions and adjacent optical components. The spatial current blocking regions may be comprised of a pair of spatially disposed trenches or ion implanted regions or high resistance implanted regions.

Abstract: The WDM receiver includes a wavelength demultiplexer, a detector array and a signal extractor. The wavelength demultiplexer receives an n-channel optical input signal and transmits the n-channel optical input signal to m optical outputs. Each of the optical outputs receives a wavelength band centered at a different wavelength. The wavelength bands have a center-to-center wavelength spacing of &Dgr;&lgr;′. The detector array is composed of m detector elements coupled to the wavelength demultiplexer. Each of the detector elements generates a detection signal in response to light received from one of the optical outputs of the wavelength demultiplexer. The signal extractor receives the detection signals from the detector array and converts the detection signals to an n-channel receiver output signal, each channel of which corresponds to a different one of the n channels of the optical input signal.

Abstract: A low cost, high speed, short haul, optic interconnect and data link which employs an array of vertical cavity surface emitting laser (VCSEL) arrays through which several optical signals are simultaneously transmitted through collimating optics that generate multiple, multiple-wavelength optical signals. Each combined optical signal is transmitted to a receiver array comprising a plurality of optical filters and photodetector arrangements that have a number of sections, each having an optical filter to pass a specific optical wavelength, and a mating photodetector element to convert the specific optical signal to an electrical signal. The signals may be coupled between the transmitter array and the receiver array through free space or through optical fibers.

Abstract: Light emission methods and light emission devices are described including method and devices capable of emitting light at a plurality of controllable wavelengths. According to one aspect, a light emission method includes providing a control signal and emitting light using a laser operating in a plurality of polarization states. The polarization state of the laser is adjusted responsive to the control signal and the wavelength of the light emitted using the laser is adjusted responsive to the adjustment of the polarization state of the laser.

Abstract: A frequency modulated (FM) vertical cavity surface emitting laser (VCSEL). The frequency modulated VCSEL includes a mirror region that has an active region. The frequency modulated VCSEL also includes a phase adjustment region for use in altering the characteristics of the VCSEL. For example, by changing the index of refraction in the phase adjustment region, the wavelength of the VCSEL can be changed, resulting in frequency modulation.

Abstract: Electrical isolation regions are formed between adjacently disposed electro-optical components integrated in a monolithic semiconductor photonic chip, such as an EML or PIC chip. A bias, VC, is applied to the isolation region so that any parasitical current path developed between adjacent active or passive optical components, now separated by an isolation region, is established through the electrical isolation region and clamped to the bias, VC. The applied bias, VC, may be a positive bias, a negative bias, or a zero or a ground bias. The electrical isolation regions are formed by spatial current blocking regions formed at adjacent sides of the electrical isolations region transverse to a direction of light propagation through the optical components, or between the electrical isolation regions and adjacent optical components. The spatial current blocking regions may be comprised of a pair of spatially disposed trenches or ion implanted regions or high resistance implanted regions.

Abstract: A transmitter array that has at least one pixel element. Each pixel element includes at least a primary semiconductor laser and a secondary semiconductor laser. In this manner, when the primary semiconductor laser is inoperative, the secondary semiconductor laser is utilized for transmission.

Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Abstract: An optical communication system including an integrated circuit chip, an electro-optical chip operatively integrated on the integrated circuit chip, an adjustable optical chip which includes at least one optical element disposed between the electro-optical chip and one of a source or recipient of at least one optical signal, at least one micromachine operatively coupled to the at least one optical element to selectively manipulate the at least one optical element; an optical signal sensor disposed relative to the at least one optical signal to sense an optical signal condition data, and to transmit said optical signal condition data to the integrated circuit chip, a feedback circuit between the integrated circuit chip and the at least one micromachine, the integrated circuit chip configured to receive the optical signal condition data, convert it to a corresponding feedback signal, and to transmit the feedback signal through the feedback circuit to the micromachine, thereby causing the micromachine to selecti

Abstract: A photonic integrated circuits (PICs), also referred to as opto-electronic integrated circuits (OEICs), and more particularly to a PIC in the form of an optical receiver PIC or RxPIC for use in an optical transport networks. Also, an optical transmitter PIC (TxPIC) is also disclosed in conjunction with an RxPIC in an optical transport network. The chip is cast from an InP wafer and is made from Group III-V elemental materials in the InGaAsP/InP regime with fabrication accomplished through selective metalorganic vapor phase epitaxy (MOVPE) or also known as metalorganic chemical vapor deposition (MOCVD). Integrated on the chip, starting at the input end which is coupled to receive multiplexed optical data signals from an optical transport network is an optical amplifier, an optical demultiplexer, and a plurality of on-chip photodiodes (PDs) each to receive a demultiplexed data signal from the AWG DEMUX for optical-to-electrical signal conversion.

Abstract: Electrical isolation regions are formed between adjacently disposed electro-optical components integrated in a monolithic semiconductor photonic chip, such as an EML or PIC chip. A bias, VC, is applied to the isolation region so that any parasitical current path developed between adjacent active or passive optical components, now separated by an isolation region, is established through the electrical isolation region and clamped to the bias, VC. The applied bias, VC, may be a positive bias, a negative bias, or a zero or a ground bias. The electrical isolation regions are formed by spatial current blocking regions formed at adjacent sides of the electrical isolations region transverse to a direction of light propagation through the optical components, or between the electrical isolation regions and adjacent optical components. The spatial current blocking regions may be comprised of a pair of spatially disposed trenches or ion implanted regions or high resistance implanted regions.

Abstract: Optical communication devices and optical communication methods are described. The devices and methods may be implemented in parallel optical communication applications according to some exemplary described aspects to provide enhanced bandwidth. According to one aspect, an exemplary optical communication device includes a plurality of light sources configured in an array and individually adapted to communicate information with respect to an optical communication medium. Individual ones of the light sources are configured to emit light having at least three different and distinct levels to communicate the information with respect to the optical communication medium. The device of this aspect further includes a controller configured to provide a plurality of control signals to control respective ones of the light sources to individually communicate respective information using the at least three different and distinct levels to implement multi-level coding. Other aspects are described.

Abstract: Disclosed are apparatus- and methods of reducing insertion loss, passivation, planarization and in-wafer testing of integrated optical components and in-wafer chips in photonic integrated circuits (PICs).

Abstract: An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.

Abstract: A photonic integrated circuit (PIC) chip comprising an array of modulated sources, each providing a modulated signal output at a channel wavelength different from the channel wavelength of other modulated sources and a wavelength selective combiner having an input optically coupled to received all the signal outputs from the modulated sources and provide a combined output signal on an output waveguide from the chip. The modulated sources, combiner and output waveguide are all integrated on the same chip.

Abstract: Photonic integrated circuits (PIC) semiconductor chips are provided with thermal isolation and/or heat dissipation structures between integrated optical components in the PIC chip, particularly integrated active optical components. These structures may also serve as a ground path for electrical circuitry on the PIC chip. An important function is the enhanced thermal isolation from, or dissipation of heat from, between adjacent or neighboring optical components in the PIC so that required spacing between adjacent optical components can be made even less than the thickness of the substrate thereby realizing a more compact optical component array on the monolithic PIC chips.

Abstract: Light emission methods and light emission devices are described including methods and devices capable of emitting light at a plurality of controllable wavelengths. According to one aspect, a light emission method includes providing a control signal and emitting light using a laser operating in a plurality of polarization states. The polarization state of the laser is adjusted responsive to the control signal and the wavelength of the light emitted using the laser is adjusted responsive to the adjustment of the polarization state of the laser.

Abstract: A monolithic photonic integrated circuit (PIC) chip comprises an array of modulated sources providing a plurality of channel signals of different wavelengths and an optical combiner coupled to receive the channel signals and produce a combined output of the channel signals. The arrays of modulated sources are formed as ridge waveguides to enhance the output power from the respective modulated sources so that the average output power from the sources is approximately 2 to 4 times higher than in the case of comparable arrays of modulated sources formed as buried waveguides.

Abstract: A compact WDM optical device can demultiplex an optical laser signal containing several different wavelengths corresponding to particular channels, and, in reverse operation operate as a multiplexer to interleave several different wavelengths into a multiplexed multi-channel optical laser signal with improved insertion loss characteristics. The optical device includes a linear array of passive resonant optical cavities, in the form of Fabry-Perot filters, extending in a lateral direction and an integral array of associated microlenses extending in the lateral direction. Each microlens has a center which is offset from the central longitudinal axis of an associated Fabry-Perot filter to reflect laser radiation through the device. Each optical cavity is tuned by adjusting the longitudinal dimension thereof to a particular wavelength contained in the multi-channel optical signal. A stepped-wavelength steered laser radiation source for the optical device uses a VCSEL array with offset microlenses.