Abstract: A method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

Abstract: A power semiconductor device includes a first region in an active region of a semiconductor body and including first trenches each having a first trench electrode electrically connected to a gate terminal and a first trench insulator. A second region includes second trenches each having a second trench electrode electrically connected to the gate terminal and a second trench insulator. At least one of the following applies: a minimal thickness of each second trench insulator amounts to at least 120% of a corresponding minimal thickness of each first trench insulator; an average thickness of the second trench insulators amounts to at least 120% of an average thickness of the first trench insulators; a trench bottom thickness of each second trench insulator amounts to at least 120% of a corresponding trench bottom thickness of each first trench insulator; a minimal breakdown voltage of each second trench insulator amounts to at least 120% of a minimal breakdown voltage of each first trench insulator.

Abstract: A semiconductor device includes: a semiconductor substrate having an active device region that includes a plurality of device cells and a termination region between the active device region and an edge of the semiconductor substrate; a field termination structure in the termination region and including a continuous region of a first conductivity type and a plurality of rings of the first conductivity type in the continuous region and having a higher average doping concentration than the continuous region; and a charge balance structure in the active device region and including interleaved columns of the first conductivity type and of a second conductivity type opposite the first conductivity type. The charge balance structure extends into the termination region below the field termination structure such that at least an outermost one of the columns of the first conductivity type is connected to the continuous region of the field termination structure.

Abstract: A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. The first load terminal structure includes a conductive layer in contact with the semiconductor structure, a bonding block configured to be contacted by at least one bond wire and to receive at least a part of the load current from the at least one bond wire and/or the conductive layer, a support block having a hardness greater than the hardness of the conductive layer and the bonding block. The bonding block is mounted on the conductive layer via the support block, and a zone is arranged within the conductive layer and/or the bonding block, the zone exhibiting nitrogen atoms.

Abstract: A technology is provided for optimizing compute tasks for performing functions in computer environment. Compute tasks and sub-compute tasks that perform a function within computer environment may be monitored. One or more task patterns may be detected based at least in part on the one or more compute tasks. At least one task patterns is identified as an efficient or alternative compute task pattern to perform the function. An automation option is provided to execute the efficient or alternative compute task pattern to perform the function. Each compute task associated with the efficient or alternative compute task pattern may be automatically executed to perform the function upon acceptance of the automation option.

Abstract: An intermediary system identifies a portion of the library that is used to load a page, generates a hint file based on just the portion of the library that is used to load the page, and retrieves the hint file each time the page is loaded in the future. For example, the intermediary system may determine a portion of the library that is used to load the page when a page is first requested. Once the intermediary system determines the portion of the library that is used to load the page, the hint file is generated based on the portion. Each subsequent time that the intermediary system receives a request to load the same page, the intermediary system may retrieve the hint file to determine how to load the page.

Abstract: A system is configured to receive a network resource request from a user device configured with a browsing application, wherein the request includes identification data associated with the user device. The system transmits, to a network resource provider, a request for the network resource, wherein the request transmitted to the network resource provider excludes identification data included in the request received from the user device. The system receives from the network resource provider a response, including a document comprising a field configured to receive payment information for an item purchase. The system receives from the browsing application an indication that an anonymous payment instrument, associated with a first entity different than the user, is to be used to purchase a first item at a first price. The system causes information regarding the anonymous payment instrument to be provided to the network resource provider.

Abstract: A method of forming an electrical contact and a method of forming a chip package are provided. The methods may include arranging a metal contact structure including a non-noble metal and electrically contacting the chip, arranging a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Abstract: In various embodiments, a method of forming an electrical contact is provided. The method may include depositing, by atomic layer deposition, a passivation layer over at least a region of a metal surface, wherein the passivation layer may include aluminum oxide, and electrically contacting the region of the metal surface with a metal contact structure, wherein the metal contact structure may include copper.

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

Abstract: A system is disclosed that improves the ability for users to select links and/or other display elements via a touch screen, such as the touch screen of a smartphone, tablet, or other mobile device. The system achieves this effect by adjusting the sizes and/or shapes of the touch targets associated with particular display elements. For example, if a particular link on a web page is determined to be difficult to select via a touch screen (based on monitored user behaviors and/or based on an automated analysis of page content), the touch target associated with the link may be increased in size.

Abstract: A power semiconductor transistor includes an electrically conductive contact structure including a plurality of contacts. A first one of the contacts is electrically connected to both a first load terminal and a first zone of a doped semiconductor structure. A second one of the contacts is electrically coupled to one of the first load terminal and a control electrode. The second contact laterally overlaps with both a second zone of the doped semiconductor structure, and a gap is formed between two adjacent field plates. The second zone of the doped semiconductor structure terminates in a section laterally overlapping with the gap.

Abstract: Approaches enable three-dimensional (3D) display and interaction with interfaces (such as a webpage, an application, etc.) when the device is operating in a 3D view mode. For example, interface elements can be highlighted, emphasized, animated, or otherwise altered in appearance, and/or arrangement in the renderings of those interfaces based at least in part on an orientation of the device or a position of a user using the device. Further, the 3D view mode can provide for an animated 3D departure and appearance of elements as the device navigates from a current page to a new page. Further still, approaches provide for the ability to specify 3D attributes (such as the appearance, action, etc.) of the interface elements. In this way, a developer of such interfaces can use information (e.g., tags, CSS, JavaScript, etc.) to specify a 3D appearance change to be applied to at least one interface element when the 3D view mode is activated.

Abstract: A vertical power semiconductor component includes a semiconductor chip, the semiconductor chip having a top main surface and a bottom main surface. Each of said top main surface and said bottom main surface is in a heat exchanging relationship with a top metallization layer and a bottom metallization each of which serving as a heat sink. Each of said top metallization layer and said bottom metallization layer have a layer thickness of at least 15 ?m and have a specific heat capacity per volume that is at least a factor of 1.3 higher than the specific heat capacity per volume of the semiconductor chip. Each of said top metallization layer and said bottom metallization layer serving as a heat sink contacts the respective main surface via a respective diffusion barrier layer.

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a silicon carbide semiconductor body and a metal adhesion and barrier structure between the metal structure and the silicon carbide semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten.

Abstract: According to an embodiment of a semiconductor device, the semiconductor devices includes a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a first layer having titanium and tungsten, and a second layer having titanium, tungsten, and nitrogen on the first layer having titanium and tungsten.

Abstract: In various embodiments, a chip package is provided. The chip package may include a chip, a metal contact structure including a non-noble metal and electrically contacting the chip, a packaging material, and a protective layer including or essentially consisting of a portion formed at an interface between a portion of the metal contact structure and the packaging material, wherein the protective layer may include a noble metal, wherein the portion of the protective layer may include a plurality of regions free from the noble metal, and wherein the regions free from the noble metal may provide an interface between the packaging material and the non-noble metal of the metal contact structure.

Abstract: Systems, methods, and computer-readable media related to configuration of multiple browser applications to control the functionality of the browser application as at least some content is accessed are provided. The configuration of a server-based browser application and a client-based browser application can be controlled programmatically such that browser configuration can be validated and controlled by at least some content providers. Additionally, the configuration and subsequent processing of content provided by an authenticating content provider can be implemented in a manner to limit content access functionality.

Abstract: Systems, methods, and computer-readable media related to configuration of browser applications executed on client computing device to control the functionality of the browser application as at least some content is accessed. The configuration of the browser application can be controlled programmatically such that the browser configuration can be validated and controlled by at least some content providers. Additionally, the configuration and subsequent processing of content provided by an authenticating content provider can be implemented in a manner such that users of a client computing device and other applications on the client computing device may not have access to modify or otherwise interfere with the operation of the browser software application.