Patents by Inventor Frank Hille
Frank Hille has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20170221842Abstract: A power semiconductor device, a power semiconductor module and a power semiconductor device processing method are provided. The power semiconductor device includes a first load terminal structure, a second load terminal structure, and a semiconductor structure electrically coupled to each load terminal structure and configured to carry a load current. The first load terminal structure includes a conductive layer in contact with the semiconductor structure, a bonding block configured to be contacted by at least one bond wire and to receive at least a part of the load current from the at least one bond wire and/or the conductive layer, a support block having a hardness greater than the hardness of the conductive layer and the bonding block. The bonding block is mounted on the conductive layer via the support block, and a zone is arranged within the conductive layer and/or the bonding block, the zone exhibiting nitrogen atoms.Type: ApplicationFiled: January 31, 2017Publication date: August 3, 2017Applicant: Infineon Technologies AGInventors: Roman ROTH, Frank HILLE, Hans-Joachim SCHULZE
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Patent number: 9685504Abstract: A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.Type: GrantFiled: August 31, 2016Date of Patent: June 20, 2017Assignee: Infineon Technologies AGInventors: Andreas Haertl, Frank Hille, Francisco Javier Santos Rodriguez, Daniel Schloegl, Andre Rainer Stegner, Christoph Weiss
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Patent number: 9543405Abstract: A method of manufacturing a reduced free-charge carrier lifetime semiconductor structure includes forming a plurality of transistor gate structures in trenches arranged in a semiconductor substrate, forming a body region between adjacent ones of the transistor gate structures and forming an end-of-range irradiation region between adjacent ones of the transistor gate structures, the end-of-range irradiation region having a plurality of vacancies.Type: GrantFiled: March 28, 2014Date of Patent: January 10, 2017Assignee: Infineon Technologies AGInventors: Holger Ruething, Hans-Joachim Schulze, Frank Hille, Frank Pfirsch
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Publication number: 20160372539Abstract: A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.Type: ApplicationFiled: August 31, 2016Publication date: December 22, 2016Inventors: Andreas Haertl, Frank Hille, Francisco Javier Santos Rodriguez, Daniel Schloegl, Andre Rainer Stegner, Christoph Weiss
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Patent number: 9443971Abstract: A semiconductor device includes a diffusion barrier layer, a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region in contact with the diffusion barrier layer, the contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing the lifetime and/or the mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.Type: GrantFiled: November 13, 2015Date of Patent: September 13, 2016Assignee: Infineon Technologies AGInventors: Andreas Haertl, Frank Hille, Francisco Javier Santos Rodriguez, Daniel Schloegl, Andre Rainer Stegner, Christoph Weiss
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Patent number: 9385181Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.Type: GrantFiled: January 23, 2014Date of Patent: July 5, 2016Assignee: Infineon Technologies AGInventors: Hans Peter Felsl, Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze, Daniel Schloegl
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Publication number: 20160141406Abstract: A semiconductor device includes a diffusion barrier layer, a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region in contact with the diffusion barrier layer, the contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing the lifetime and/or the mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.Type: ApplicationFiled: November 13, 2015Publication date: May 19, 2016Inventors: Andreas Haertl, Frank Hille, Francisco Javier Santos Rodriguez, Daniel Schloegl, Andre Rainer Stegner, Christoph Weiss
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Patent number: 9312334Abstract: A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.Type: GrantFiled: September 24, 2014Date of Patent: April 12, 2016Assignee: Infineon Technologies Austria AGInventors: Holger Ruething, Frank Pfirsch, Armin Willmeroth, Frank Hille, Hans-Joachim Schulze
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Publication number: 20150206983Abstract: A semiconductor diode includes a semiconductor body having opposite first and second sides. A first and a second semiconductor region are consecutively arranged along a lateral direction at the second side. The first and second semiconductor regions are of opposite first and second conductivity types and are electrically coupled to an electrode at the second side. The semiconductor diode further includes a third semiconductor region of the second conductivity type buried in the semiconductor body at a distance from the second side. The second and third semiconductor regions are separated from each other.Type: ApplicationFiled: January 23, 2014Publication date: July 23, 2015Inventors: Hans Peter Felsl, Elmar Falck, Manfred Pfaffenlehner, Frank Hille, Andreas Haertl, Holger Schulze, Daniel Schloegl
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Publication number: 20150008480Abstract: A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.Type: ApplicationFiled: September 24, 2014Publication date: January 8, 2015Inventors: Holger Ruething, Frank Pfirsch, Armin Willmeroth, Frank Hille, Hans-Joachim Schulze
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Patent number: 8860133Abstract: A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.Type: GrantFiled: December 20, 2012Date of Patent: October 14, 2014Assignee: Infineon Technologies Austria AGInventors: Holger Ruething, Frank Pfirsch, Armin Willmeroth, Frank Hille, Hans-Joachim Schulze
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Publication number: 20140213022Abstract: A method of manufacturing a reduced free-charge carrier lifetime semiconductor structure includes forming a plurality of transistor gate structures in trenches arranged in a semiconductor substrate, forming a body region between adjacent ones of the transistor gate structures and forming an end-of-range irradiation region between adjacent ones of the transistor gate structures, the end-of-range irradiation region having a plurality of vacancies.Type: ApplicationFiled: March 28, 2014Publication date: July 31, 2014Inventors: Holger Ruething, Hans-Joachim Schulze, Frank Hille, Frank Pfirsch
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Patent number: 8741750Abstract: A method for fabricating a semiconductor body is presented. The semiconductor body includes a p-conducting zone, an n-conducting zone and a pn junction in a depth T1 in the semiconductor body between the p-conducting zone and the n-conducting zone. The method includes providing the semiconductor body, producing the p-doped zone by the diffusion of an impurity that forms an acceptor in a first direction into the semiconductor body, and producing the n-conducting zone by the implantation of protons in the first direction into the semiconductor body into a depth T2>T1 and the subsequent heat treatment of the semiconductor body in order to form hydrogen-induced donors.Type: GrantFiled: September 30, 2009Date of Patent: June 3, 2014Assignee: Infineon Technologies Austria AGInventors: Frank Hille, Franz Josef Niedernostheide, Hans-Joachim Schulze, Holger Schulze
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Patent number: 8367532Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: GrantFiled: July 26, 2012Date of Patent: February 5, 2013Assignee: Infineon Technologies AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide
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Patent number: 8344415Abstract: A semiconductor component is disclosed. One embodiment provides a semiconductor body having a cell region with at least one zone of a first conduction type and at least one zone of a second conduction type in a rear side. A drift zone of the first conduction type in the cell region is provided. The drift zone contains at least one region through which charge carriers flow in an operating mode of the semiconductor component in one polarity and charge carriers do not flow in an operating mode of the semiconductor component in an opposite polarity.Type: GrantFiled: October 25, 2007Date of Patent: January 1, 2013Assignee: Infineon Technologies Austria AGInventors: Holger Ruething, Frank Pfirsch, Armin Willmeroth, Frank Hille, Hans-Joachim Schulze
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Publication number: 20120315747Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: July 26, 2012Publication date: December 13, 2012Inventors: Anton MAUDER, Hans-Joachim SCHULZE, Frank HILLE, Holger SCHULZE, Manfred PFAFFENLEHNER, Carsten SCHÄFFER, Franz-Josef NIEDERNOSTHEIDE
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Patent number: 8314019Abstract: A method of fabricating a power semiconductor component having a semiconductor body having at least two main surfaces includes applying a layer of a metallization on at least one of the main surfaces. The layer has a thickness of at least 15 ?m and serves as a heat sink. The method also includes producing a field stop zone in the semiconductor body by implantation of protons or helium through the layer.Type: GrantFiled: August 9, 2011Date of Patent: November 20, 2012Assignee: Infineon Technologies AGInventors: Frank Hille, Hans-Joachim Schulze
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Patent number: 8252671Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: GrantFiled: July 20, 2011Date of Patent: August 28, 2012Assignee: Infineon Technologies Austria AGInventors: Anton Mauder, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schaeffer, Franz-Josef Niedernostheide
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Publication number: 20110300707Abstract: A method of fabricating a power semiconductor component having a semiconductor body having at least two main surfaces includes applying a layer of a metallization on at least one of the main surfaces. The layer has a thickness of at least 15 ?m and serves as a heat sink. The method also includes producing a field stop zone in the semiconductor body by implantation of protons or helium through the layer.Type: ApplicationFiled: August 9, 2011Publication date: December 8, 2011Inventors: Frank Hille, Hans-Joachim Schulze
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Publication number: 20110275202Abstract: A semiconductor device in one embodiment has a first connection region, a second connection region and a semiconductor volume arranged between the first and second connection regions. Provision is made, within the semiconductor volume, in the vicinity of the second connection region, of a field stop zone for spatially delimiting a space charge zone that can be formed in the semiconductor volume, and of an anode region adjoining the first connection region. The dopant concentration profile within the semiconductor volume is configured such that the integral of the ionized dopant charge over the semiconductor volume, proceeding from an interface of the anode region which faces the second connection region, in the direction of the second connection region, reaches a quantity of charge corresponding to the breakdown charge of the semiconductor device only near the interface of the field stop zone which faces the second connection region.Type: ApplicationFiled: July 20, 2011Publication date: November 10, 2011Inventors: Anton MAUDER, Hans-Joachim Schulze, Frank Hille, Holger Schulze, Manfred Pfaffenlehner, Carsten Schäffer, Franz-Josef Niedernostheide