Abstract: A circuit for providing a current to an organic light emitting diode comprising: (a) an amorphous silicon field effect transistor having a gate electrode and a drain electrode through which the current is provided to the organic light emitting diode; and (b) a controller for controlling a bias between the gate electrode and the drain electrode to maintain a threshold voltage shift of less than about 1V. The organic light emitting diode is preferably a component in an active matrix.

Abstract: An active matrix organic light-emitting diode comprising an organic light-emitting diode portion. The organic light-emitting diode portion comprising: an underlayer having a top surface and bottom surface; a first electrode layer which is deposited and patterned on the top surface of the underlayer such that at least a portion of the underlayer is exposed, wherein the deposited first electrode layer comprises a top surface, a bottom surface and sidewalls disposed between the top and bottom surfaces, the sidewalls are positioned adjacent to the exposed portion of the underlayer; a passivation layer deposited on the exposed portion of the underlayer and the peripheral regions of the first electrode layer such that the passivation layer covers the sidewalls and the peripheral regions of the first electrode layer; a transparent conductor layer deposited on the passivation layer and the non-peripheral regions of the first electrode layer; and a second electrode layer deposited on the transparent conductor layer.

Abstract: There is provided a circuit for driving an organic light emitting diode (OLED). The circuit includes a current source for providing current to a first terminal of the OLED, and a generator for providing a variable voltage signal to a second terminal of the OLED to facilitate control of the current.

Abstract: The present invention discloses a semiconductor device, a thin film transistor (TFT), and a process for forming a TFT. The semiconductor device according to the present invention comprises a top-gate type thin film transistor (TFT), said top-gate type TFT being formed on a substrate, said top-gate type TFT comprising: an insulating layer deposited on said substrate; a source electrode and a drain electrode formed from a metal-dopant compound, said metal-dopant compound being deposited on said insulating layer; a polycrystalline Si (poly-Si) layer deposited on said insulating layer and said source electrode and said drain electrode; an ohmic contact layer being formed between said metal-dopant compound and said poly-Si layer through migration of said dopant from said metal-dopant compound; a gate insulating layer deposited on said poly-Si layer; and a gate electrode formed on said gate insulating layer, wherein said poly-Si layer is crystallized by metal induced lateral crystallization.

Abstract: An active matrix display in accordance with the present invention includes a plurality of pixels arranged in an array. At least two transistors are included for coupling to each pixel, and the transistors are positioned within the array for switching the pixels on and off according to data and gate signals. A plurality of control lines are coupled to the transistors of each pixel such that the control lines provide multiplexing for at least one of data signal multiplexing and gate signal multiplexing.

Abstract: The present invention discloses a semiconductor device, a thin film transistor (TFT), and a process for forming a TFT. The semiconductor device according to the present invention comprises a top-gate type thin film transistor (TFT), said top-gate type TFT being formed on a substrate, said top-gate type TFT comprising: an insulating layer deposited on said substrate; a source electrode and a drain electrode formed from a metal-dopant compound, said metal-dopant compound being deposited on said insulating layer; a polycrystalline Si (poly-Si) layer deposited on said insulating layer and said source electrode and said drain electrode; an ohmic contact layer being formed between said metal-dpoant compound and said poly-Si layer through migration of said dopant from said metal-dopant compound; a gate insulating layer deposited on said poly-Si layer; and a gate electrode formed on said gate insulating layer, wherein said poly-Si layer is crystallized by metal induced lateral crystallization.

Abstract: An active matrix display in accordance with the present invention includes a plurality of pixels arranged in an array. At least two transistors associated with each pixel are included. The transistors are serially connected to each other and disposed within the array for switching the pixels on and off according to data and gate signals. A data line is coupled to a first end of the serially connected transistors for each pixel. A second end of the serially connected transistors is coupled to a storage device. The serially connected transistors provide multiplexing capability for at least one of data signal multiplexing and gate signal multiplexing.

Abstract: A method for opening resist in raised areas of a semiconductor device. In one aspect, a conductive layer is formed over a channel insulator layer to form a raised portion including a height above a substantially planar surrounding area, the channel insulator layer being aligned to a gate electrode. A photoresist layer is formed over the raised portion and the surrounding area, and patterned by employing a gray scale light mask to reduce exposure light on the photoresist over the raised portion. Then, the photoresist is etched to thin it such that a gap is formed in the photoresist down to the conductive layer over the raised portion, but the photoresist remains everywhere else, and the conductive layer is etched in accordance with the photoresist to form source and drain electrodes which are self aligned to the channel insulator layer.

Abstract: A method for forming a thin film transistor having source and drain electrodes self-aligned to a gate electrode by employing a single lithographic step includes forming an opaque gate electrode on a substrate, depositing a first dielectric layer on the gate electrode and the substrate, depositing a semiconductor layer on the first dielectric layer, and depositing a second dielectric layer on the semiconductor layer. A first photoresist is deposited on the second dielectric layer and patterned by employing the gate electrode as a mask for blocking light used to expose the first photoresist. The second dielectric layer is etched to form a top insulator portion of the second dielectric layer in alignment with the gate electrode. The first photoresist is removed. A doped semiconductor layer and a conductive layer are deposited. A second photoresist is formed on the conductive layer.

Abstract: An apparatus provides optimal on-off contrast ratio in a liquid crystal display panel. The apparatus includes a capacitive temperature sensing device for sensing the temperature of liquid crystal display pixels and having an output voltage according to an applied input voltage and a sensed temperature; a monitoring device including differentiator and sample and hold circuit for obtaining a peak voltage corresponding to a maximum change of the voltage output from the temperature sensing device; and a device for measuring a difference between the peak voltage with a predetermined reference voltage and outputting a signal representing the difference. Heat is consequently applied to the liquid crystal display panel in accordance with a measured temperature difference. Advantageously, the capacitive temperature sensing device is formed as part of the liquid crystal display element.

Abstract: An active matrix display in accordance with the present invention includes a plurality of pixels arranged in an array. At least two transistors associated with each pixel are included. The transistors are serially connected to each other and disposed within the array for switching the pixels on and off according to data and gate signals. A data line is coupled to a first end of the serially connected transistors for each pixel. A second end of the serially connected transistors is coupled to a storage device. The serially connected transistors provide multiplexing capability for at least one of data signal multiplexing and gate signal multiplexing.

Abstract: A driving method for multiplexing pixels in active matrix displays in accordance with the present invention includes the steps of providing a plurality of pixels arranged in an array, wherein each pixel includes at least two transistors associated therewith, the transistors disposed in the array of pixels and each pixel including a plurality of control lines for controlling the transistors for turning each pixel on and off and sequencing waveforms on the control lines to provide multiplexing at the pixels in the array. A circuit for addressing pixels in a pixel array in accordance with the present invention includes at least two transistors associated with each pixel, the transistors disposed in the array of pixels. A plurality of control lines associated with each pixel for controlling the transistors of each pixel. At least one gate driver sequences waveforms on the control lines to provide multiplexing at the pixels in the array.

Abstract: An LCD reflection display array implementing two or more layers of reflecting front surface mirrors with an upper layer mirror(s) having absorbing back surface(s). The mirror surfaces associated with each pixel are electrically connected to the pixel output electrode. The lower mirrors are appropriately positioned in the three dimensions to achieve nearly 100% aperture fill.