Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A semiconductor device is disclosed. In one example, the semiconductor device includes a diepad having a top surface and a bottom surface as well as a semiconductor die mounted on the top surface of the diepad. The bottom surface of the diepad includes at least two coined edge regions and an uncoined region. The diepad includes an uncoined tie bar arranged between two coined edge regions of the bottom surface. An area of the top surface is larger than an area of the uncoined region of the bottom surface.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to a method for manufacturing modules with one or more optoelectronic components, comprising the steps: producing at least one layer stack providing a base module on a carrier having a first layer, an active layer formed thereon, and a second layer formed thereon; exposing a surface area of the first layer facing away from the carrier; forming a first contact to a surface region of the second layer facing away from the carrier; and forming a second contact to the surface area of the first layer facing away from the carrier.

Abstract: In one embodiment the semiconductor laser comprises a carrier and an edge-emitting laser diode which is mounted on the carrier and which comprises an active zone for generating a laser radiation and a facet with a radiation exit region. The semiconductor laser further comprises a protective cover, preferably a lens for collimation of the laser radiation. The protective cover is fastened to the facet and to a side surface of the carrier by means of an adhesive. A mean distance between a light entrance side of the protective cover and the facet is at most 60 ?m. The semiconductor laser is configured to be operated in a normal atmosphere without additional gas-tight encapsulation.

Abstract: A method of fabricating a semiconductor device package includes: providing a die carrier; disposing at least one semiconductor die on the die carrier, the semiconductor die comprising at least one contact pad on a main face remote from the carrier; electrically connecting the semiconductor die or another electrical device with an electrical connector; applying an encapsulant above the semiconductor die, the die carrier, and the electrical connector; and screwing a metallic drilling screw through the encapsulant so that an end of the drilling screw contacts the electrical connector.

Abstract: A composite component, a device, and method for producing the composite component including a plurality of optical components, a removable sacrificial layer, a retaining structure and a common intermediate carrier are provided, wherein the optical components each have an optical element for shaping a light beam and the sacrificial layer is arranged in the vertical direction at least in places between the intermediate carrier and the optical components. The retaining structure includes retaining elements, wherein the retaining structure and the sacrificial layer form a mechanical connection between the intermediate carrier and the optical components. The optical components are mechanically connected to the intermediate carrier only via the retaining structure, wherein the retaining elements are formed in such a way that under mechanical load they release the optical components so that the optical components are formed to be detachable from the intermediate carrier and thus transferable.

Abstract: A method of manufacturing a micro-light-emitting diode display includes processing a wafer to form a plurality of functional chips integral with the wafer. A plurality of wafer tiles is defined in the wafer, wherein each wafer tile is composed of a cluster of functional chips. The wafer tiles are singulated by wafer dicing. A plurality of separate wafer tiles is bonded to a semiconductor wafer by hybrid bonding. The functional chips are singulated together with chips of the semiconductor wafer by dicing the bonded-together wafer tiles and semiconductor wafer.

Abstract: A method of forming a semiconductor package includes providing a first metal substrate; and mounting a stacked arrangement on the first metal substrate, the stacked arrangement comprising a semiconductor die, wherein mounting the stacked arrangement includes: providing a first layer of attachment material between the first metal substrate and the stacked arrangement; and providing a second layer of attachment material within the stacked arrangement at an interface with the semiconductor die, wherein at least one of the first and second layers of attachment material is a compressible layer that includes one or more elastomeric elements embedded within a matrix of solder material.

Abstract: A package includes a carrier, an electronic component on the carrier, an encapsulant encapsulating at least part of the carrier and the electronic component, and at least one lead extending beyond the encapsulant and having a punched surface, wherein at least part of at least one side flank of the encapsulant has a sawn texture.

Abstract: A package is disclosed. In one example, the package includes a carrier, an electronic component mounted on the carrier, an encapsulant fully encapsulating the electronic component and the carrier, electrically conductive leads electrically coupled with the carrier and/or with the electronic component and extending out of the encapsulant at opposing sides of the encapsulant, and a recess in at least one of two opposing main surfaces of the encapsulant and extending between two opposing further sides of the encapsulant. A difference between a creepage current path length including the recess and a further creepage current path is not more than 20%.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: A semiconductor package includes an input side including input pins an output side including high voltage pins, an isolation structure that galvanically isolates the input side from the output side, an input driver die mounted on the input side and electrically connected with the input pins, first and second power transistor dies mounted on the output side and each having a first load terminal electrically connected with the high voltage pins, an output driver die that is communicatively coupled to the input driver die driver die via the isolation structure and is electrically connected with gate terminals of the first and second power transistor dies, and one or more electrically conductive structures forming a direct electrical connection between load terminals of the first and second power transistor dies, wherein the output driver die is mounted on one of the one or more electrically conductive structures.

Abstract: The invention relates to an illumination arrangement comprising a light-emitting optoelectronic element and an optical device for beam conversion of electromagnetic radiation generated by the light-emitting optoelectronic element. The light emitting optoelectronic element comprises a plurality of emission areas arranged in matrix form; and each emission region is associated with a main beam direction. At least a portion of the emission areas is arranged such that the centers of the emission areas lie on a curved surface.

Abstract: An optical projection device and a method of producing the optical projection device are described. The optical projection device includes: a plurality of LEDs (light-emitting diodes), the LEDs each including a semiconductor mesa laterally spaced apart from one another by a grid structure. Each of the semiconductor mesas includes an n-type material and a p-type material adjoining at least partly the n-type material. The grid structure at least partly laterally surrounds at least the n-type material of each of the semiconductor mesas. The grid structure includes a conductive material that electrically interconnects the n-type material of the semiconductor mesas. The grid structure is configured to block optical crosstalk between light emitted by the LEDs.

Abstract: A package includes a carrier, an electronic component on the carrier, an encapsulant encapsulating at least part of the carrier and the electronic component, and at least one lead extending beyond the encapsulant and having a punched surface, wherein at least part of at least one side flank of the encapsulant has a sawn texture.

Abstract: A method is disclosed. In one example, the method comprises mounting an electronic component on an adhesive base structure on a temporary carrier, and dissolving at least part of the base structure by irradiating the base structure with electromagnetic radiation to thereby release the electronic component.