Abstract: A light-emitting component may include an IC chip and an LED chip arranged on a top surface of the IC chip and electrically coupled thereto. The LED chip may be electrically controllable by means of the IC chip. The IC chip may have at least two electrical connecting surface on a bottom surface remote from the LED chip. The light-emitting component is electrically contactable and operable by means of the connecting surfaces.

Abstract: A light-emitting module and a display device including the same are disclosed. In an embodiment a light-emitting module includes a plurality of emission regions configured to emit light, at least one first emission region and at least one second emission region of a first type configured to emit light of a first color locus and at least one first emission region and at least one second emission region of a second type configured to emit light of a second color locus and a control device for supplying the emission regions with current, wherein the emission regions are arranged on a common semiconductor chip, wherein the first color locus is different from the second color locus, wherein the first and second emission regions of the first type are adjacent to one another, and wherein the first and second emission regions of the second type are adjacent to one another.

Abstract: An optoelectronic module is provided with: a carrier with a main plane of extension, a first emission region with a plurality of emitters of a first type, which are configured to emit light of at least one predeterminable first color location during operation of the optoelectronic module, a second emission region with a plurality of emitters of a second type, which are configured to emit light of at least one predeterminable second color location during operation of the optoelectronic module, and a third emission region with a plurality of emitters of a third type, which are configured to emit light of at least one predeterminable third color location during operation of the optoelectronic module, wherein the emission regions are arranged spaced apart from each other on the carrier. In addition, a display element with a plurality of optoelectronic modules is specified.

Abstract: A light-emitting semiconductor chip and a display device are disclosed. In an embodiment a light-emitting semiconductor chip includes an emission surface formed with a plurality of first emission regions and second emission regions, wherein the first emission regions and the second emission regions are configured to emit light of a predeterminable color location, wherein the first and second emission regions are separately controllable from each other, wherein the first emission regions and second emission regions are arranged next to one another in a first plane, wherein all second emission regions form at least a part of an outer edge of the emission surface, and wherein the first emission regions have a smaller extent than the second emission regions along at least one direction lying in the first plane.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). A p-contact surface (61) is electrically connected to the p-contact (41), and an n-contact surface (63) is electrically connected to the n-contact (43) such that the p-contact surface (61) and the n-contact surface (63) are configured for external electrical and mechanical connection of the semiconductor laser (1).

Abstract: An arrangement includes a semiconductor chip with a first and second electrode. The arrangement also includes a control unit for adjusting a current for operating the semiconductor chip, a first LED voltage input coupled to the first electrode, and a reference voltage input coupled to the second electrode. The arrangement further includes an LED data input coupled to the control unit, by which a data parameter representative of a current for operating the semiconductor chip is provided. The arrangement additionally includes a cycle input coupled to the control unit, by which a reference cycle signal is provided which is representative of an operating phase of the arrangement. The control unit includes a memory arranged to record the data parameter as a memory value depending on the reference cycle signal. The control unit is configured to adjust the current depending on the memory value.

Abstract: A laser diode and a method for manufacturing a laser diode are disclosed. In an embodiment a laser diode includes a surface emitting semiconductor laser configured to emit electromagnetic radiation and an optical element arranged downstream of the semiconductor laser in a radiation direction, wherein the optical element includes a diffractive structure or a meta-optical structure or a lens structure, and wherein the optical element and the semiconductor laser are cohesively connected to each other.

Abstract: The invention relates to a method for producing a plurality of optoelectronic semiconductor components, comprising the following steps: preparing a plurality of semiconductor chips spaced in a lateral direction to one another; forming a housing body assembly, at least one region of which is arranged between the semiconductor chips; forming a plurality of fillets, each adjoining a semiconductor chip and being bordered in a lateral direction by a side surface of each semiconductor chip and the housing body assembly; and separating the housing body assembly into a plurality of optoelectronic components, each component having at least one semiconductor chip and a portion of the housing body assembly as a housing body, and each semiconductor chip not being covered by material of the housing body on a radiation emission surface of the semiconductor component, which surface is located opposite a mounting surface. The invention also relates to a semiconductor component.

Abstract: An assembly includes a carrier including a glass material, including at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, and at least one surface of the semiconductor component connects to the carrier via a melted surface including glass.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

Abstract: A module for a video wall is disclosed. In an embodiment a module includes a carrier, a plurality of components comprising at least one light-emitting structural element arranged on the carrier and an optical element, wherein the components are arranged at a prespecified lateral distance in relation to one another, wherein a retaining recess is formed between at least two components, wherein the retaining recess comprises at least two component recesses of two components which are arranged next to one another, wherein a retaining pin is fastened in the retaining recess, wherein the retaining pin is connected to the optical element, and wherein the optical element is configured to influence light irradiation onto the components and/or light emission from the components.

Abstract: An optoelectronic arrangement having a radiation conversion element and a method for producing a radiation conversion element are disclosed. In an embodiment, an optoelectronic arrangement includes a semiconductor chip having an active region configured to generate radiation, a radiation conversion element arranged downstream of the semiconductor chip in an emission direction and a reflective polarization element arranged downstream of the radiation conversion element in the emission direction. The radiation conversion element has a plurality of conversion elements, each of which has an axis of symmetry, the spatial orientation of the axes of symmetry has a preferred direction and a radiation emitted by the radiation conversion element has a preferred polarization. The reflective polarization element largely allows radiation with the preferred polarization to pass through and largely reflects radiation polarized perpendicularly to the preferred polarization.

Abstract: A module for a video wall includes a first light emitting chip of an image pixel connecting to a first power line by a first electrical terminal, the first light emitting chip connects to a third power line by a second electrical terminal, a second light emitting chip of the image pixel connects to a second power line by the first electrical terminal, the second light emitting chip of the image pixel connects to a fourth power line by the second electrical terminal, the first and/or the second power line are/is a surface metallization, including contact sections, a light emitting chip is arranged on a contact section, at least between contact sections of a first and of a second power line an insulation layer is provided on a carrier, the insulation layer includes openings above the contact sections, and the light emitting chips are arranged in the openings.

Abstract: In one embodiment of the invention, the semiconductor laser (1) comprises a semiconductor layer sequence (2). The semiconductor layer sequence (2) contains an n-type region (23), a p-type region (21) and an active zone (22) lying between the two. A laser beam is produced in a resonator path (3). The resonator path (3) is aligned parallel to the active zone (22). In addition, the semiconductor laser (1) contains an electrical p-contact (41) and an electrical n-contact (43) each of which is located on the associated region (21, 23) of the semiconductor layer sequence (2) and is configured to input current directly into the associated region (21, 23). The n-contact (43) extends from the p-type region (21) through the active zone (22) and into the n-type region (23) and is located, when viewed from above, next to the resonator path (3).

Abstract: A detection assembly and a method for producing a detection assemblies are disclosed. In an embodiment a detection arrangement includes an emitter configured to generate radiation having a peak wavelength in an infrared spectral range, a detector configured to receive the radiation, a mounting surface comprising at least a first contact surface and a second contact surface for external electrical connection of the detection arrangement, a form body adjoining the emitter and the detector at least in places and deflection optics, on which the radiation impinges during operation of the detection arrangement so that an optical path is formed between the emitter and the detector by the deflection optics, wherein the deflection optics include a scattering body into which the radiation enters during the operation through a surface of the scattering body facing the emitter.

Abstract: A component comprising a support and a semiconductor body arranged on the support, the support formed by a molded body and a metal layer. The metal layer has a first subregion and a second subregion laterally spaced apart by an intermediate space and thereby electrically separated. The molded body fills the intermediate space and has a surface extending in lateral directions free from the subregions of the metal layer and forms the rear side of the support. The support has a side face formed by a surface of the molded body extending in vertical directions, at least one of the subregions formed such that electrical contact can be made by way of the side face.

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

Abstract: A semiconductor chip, an optoelectronic device including a semiconductor chip, and a method for producing a semiconductor chip are disclosed. In an embodiment the chip includes a semiconductor body with a first main surface and a second main surface arranged opposite to the first main surface, wherein the semiconductor body includes a p-doped sub-region, which forms part of the first main surface, and an n-doped sub-region, which forms part of the second main surface and a metallic contact element that extends from the first main surface to the second main surface and that is electrically isolated from one of the sub-regions.

Abstract: A conversion element includes a platelet including an inorganic glass, and first converter particles having a shell and a core, wherein the shell includes an inorganic material and the core includes a nitride or oxynitride luminescent material and the first converter particles are arranged on and/or in the platelet.