Abstract: The semiconductor device package comprises a die carrier, at least one semiconductor die disposed on the carrier, the semiconductor die comprising at least one contact pad on a main face remote from the carrier, an encapsulant disposed above the semiconductor die, an electrical connector electrically connected with the contact pad, a drilling screw screwed through the encapsulant and connected with the electrical connector.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: In one embodiment, the method serves for producing semiconductor lasers and includes the following steps in the order indicated: A) applying a multiplicity of edge emitting laser diodes on a mounting substrate, B) applying an encapsulation element, such that the laser diodes are applied in each case in a cavity between the mounting substrate and the associated encapsulation element, C) operating the laser diodes and determining emission directions of the laser diodes, D) producing material damage in partial regions of the encapsulation element, wherein the partial regions are uniquely assigned to the laser diodes, E) collectively removing material of the encapsulation element, said material being affected by the material damage, with the result that individual optical surfaces for beam shaping arise for the laser diodes in the partial regions, and F) singulating to form the semiconductor lasers.

Abstract: A 3D display element (2) comprising a plurality of emission regions (20) adapted to emit electromagnetic radiation (L), wherein at least some emission regions (20) are associated with a first group and at least some emission regions (20) are associated with a second group (21, 22), wherein by means of the emission regions (20) of the first group (21) respectively a pixel (100) of a first perspective (11) of an image (B) can be represented, and by means of the emission regions (20) of the second group (22) respectively a pixel (100) of a second perspective (12) of the image (B) can be represented the sum of all emission regions (20) is greater than the sum of all pixels (100) of all perspectives (11, 12).

Abstract: A multi-pixel display device with an integrated circuit, a plurality of light-emitting semiconductor chips disposed on the integrated circuit, a display area having a plurality of pixels, each of the light-emitting semiconductor chips being associated with one of the pixels, a light-directing element disposed between the plurality of light-emitting semiconductor chips and the display area and adapted to direct the light of each light-emitting semiconductor chip from the plurality of light-emitting semiconductor chips to its associated pixel.

Abstract: A light-emitting component may include an IC chip and an LED chip arranged on a top surface of the IC chip and electrically coupled thereto. The LED chip may be electrically controllable by means of the IC chip. The IC chip may have at least two electrical connecting surface on a bottom surface remote from the LED chip. The light-emitting component is electrically contactable and operable by means of the connecting surfaces.

Abstract: An optoelectronic component and a lighting apparatus are disclosed. In an embodiment an optoelectronic component includes a carrier having an upper side and an underside opposite the upper side, an optoelectronic semiconductor chip arranged on the upper side of the carrier, the semiconductor chip configured to emit primary radiation during operation via one or more sides. The component further includes a first conversion layer having an inorganic phosphor on the semiconductor chip, the first conversion layer covering at least all radiation-emitting sides of the semiconductor chip not facing the carrier and a solid body in which an organic phosphor is distributed, wherein the solid body is arranged and fastened on the carrier and is at least in indirect contact with the carrier, and wherein the solid body is spaced from the radiation-emitting sides of the semiconductor chip at least by the first conversion layer and/or by the carrier.

Abstract: The invention relates to various aspects of a ?-LED or a ?-LED array for augmented reality or lighting applications, in particular in the automotive field. The ?-LED is characterized by particularly small dimensions in the range of a few ?m.

Abstract: An optical assembly and a display device are disclosed. In an embodiment an optical assembly includes a common carrier, a plurality of first chip groups, each first chip group comprising at least two similar luminescence diode chips, a plurality of second chip groups, each second chip group comprising at least two similar luminescence diode chips, wherein the first and second chip groups are arranged planar along a regular grid of first unit cells on a main surface of the common carrier and an optical element arranged downstream of the first and second chip groups with respect to a main radiation direction, wherein the luminescence diode chips of the different chip groups are configured to emit electromagnetic radiation of different wavelength characteristics.

Abstract: A light-emitting semiconductor chip and a display device are disclosed. In an embodiment a light-emitting semiconductor chip includes an emission surface formed with a plurality of first emission regions and second emission regions, wherein the first emission regions and the second emission regions are configured to emit light of a predeterminable color location, wherein the first and second emission regions are separately controllable from each other, wherein the first emission regions and second emission regions are arranged next to one another in a first plane, wherein all second emission regions form at least a part of an outer edge of the emission surface, and wherein the first emission regions have a smaller extent than the second emission regions along at least one direction lying in the first plane.

Abstract: A placement device for placing optoelectronic components on electrical lines includes a holding device for holding at least one electric line extending in a longitudinal direction, and an application device for arranging optoelectronic components on the at least one electrical line.

Abstract: The invention relates to a semiconductor laser including a carrier, an edge-emitting laser diode which is arranged on the carrier and which has an active zone for generating laser radiation and a facet with a radiation exit area, an optical element which covers the facet, a connecting material which is arranged between the optical element and the facet, a molded body which covers the laser diode and the optical element at least in places, wherein the optical element is at least partially transparent to the laser radiation emitted by the laser diode during operation, and the optical element is designed to change the main propagation direction of the laser radiation entering the optical element during operation.

Abstract: A method of transferring semiconductor chips includes providing a transfer tool having a plurality of segments, each segment having a liquid receiving area; providing a plurality of semiconductor chips in a regular array on a source carrier; providing a target carrier; selectively arranging liquid drops on the liquid receiving areas of some of the segments; causing the transfer tool to approach the source carrier, each liquid drop contacting and wetting a semiconductor chip; lifting the transfer tool from the source carrier, wherein semiconductor chips wetted by liquid drops are lifted from the source carrier by the transfer tool; causing the target carrier by the transfer tool, to approach the semiconductor chips arranged on the transfer tool contacting the target carrier; and lifting the transfer tool from the target carrier, the semiconductor chips contacting the target carrier remaining on the target carrier

Abstract: A component includes a light emitting semiconductor chip, wherein the semiconductor chip includes a layer arrangement including a plurality of layers, the p-conducting layer and the n-conducting layer adjoin one another in an active zone, a first electrical contact is configured on the p-conducting side of the layer arrangement at a first side of the semiconductor chip, a second electrical contact is configured on the n-conducting side of the layer arrangement at a second side of the semiconductor chip, the second side being situated opposite the first side of the semiconductor chip, the first side of the semiconductor chip transitions into the second side via an end side, the semiconductor chip is secured by the end side on a substrate, the substrate includes a first and second further electrical contact, and the further electrical contacts electrically conductively connect to the electrical contacts of the semiconductor chip.

Abstract: In an embodiment, a multi-chip module includes a first carrier including a mold material and at least two light-emitting diode chips embedded at least by side faces in the first carrier, wherein the light-emitting diode chips have first electrical contacts on a front side and second electrical contacts on a rear side, wherein the front side is configured as a radiation side, wherein the first electrical contacts are connected to control lines, wherein the control lines are arranged on a front side of the first carrier, wherein the second electrical contacts are connected to a collective line, and wherein the collective line is led to a rear side of the first carrier.

Abstract: A package includes a carrier, an electronic component on the carrier, an encapsulant encapsulating at least part of the carrier and the electronic component, and at least one lead extending beyond the encapsulant and having a punched surface, wherein at least part of at least one side flank of the encapsulant has a sawn texture.

Abstract: An optoelectronic component includes an optoelectronic semiconductor chip configured to emit electromagnetic radiation; an optically effective element arranged such that electromagnetic radiation emitted by the optoelectronic semiconductor chip passes through the optically effective element; and a housing, wherein the optoelectronic semiconductor chip is arranged in a cavity of the housing, the optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure.

Abstract: A method of producing an optoelectronic semiconductor component includes A) providing at least three source substrates, wherein each of the source substrates is equipped with a specific type of radiation-emitting semiconductor chips, B) providing a target substrate having a mounting plane configured to mount the semiconductor chips thereto, C) forming platforms on the target substrate, and D) transferring at least some of the semiconductor chips with a wafer-to-wafer process from the source substrates onto the target substrate so that the semiconductor chips transferred to the target substrate maintain their relative position with respect to one another, within the types of semiconductor chips, wherein on the target substrate the semiconductor chips of each type of semiconductor chips have a specific height above the mounting plane due to the platforms so that the semiconductor chips of different types of semiconductor chips have different heights.

Abstract: An optoelectronic semiconductor chip includes a plurality of core-shell rods that generate electromagnetic radiation spaced apart from each other; a first electrically conductive contact structure for n-side electrical contacting of the core-shell rods; and a second electrically conductive contact structure for p-side electrical contacting of the core-shell rods, wherein the first electrically conductive contact structure and the second electrically conductive contact structure overlap at least in sections in a vertical direction, the optoelectronic semiconductor chip is surface mountable on a mounting side, and at least a partial region of the two electrically conductive contact structures extends through a breakthrough through at least one layer of the optoelectronic semiconductor chip.