Patents by Inventor Fred D. Fishburn

Fred D. Fishburn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7767514
    Abstract: The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: August 3, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Kurt D. Beigel, Fred D. Fishburn, Rongsheng Yang
  • Publication number: 20100190314
    Abstract: Electroless plating can be utilized to form electrical interconnects associated with semiconductor substrates. For instance, a semiconductor substrate can be formed to have a dummy structure thereover with a surface suitable for electroless plating, and to also have a digit line thereover having about the same height as the dummy structure. A layer can be formed over the dummy structure and digit line, and openings can be formed through the layer to the upper surfaces of the dummy structure and digit line. Subsequently, a conductive material can be electroless plated within the openings to form electrical contacts within the openings. The opening extending to the dummy structure can pass through a capacitor electrode, and accordingly the conductive material formed within such opening can be utilized to form electrical contact to the capacitor electrode.
    Type: Application
    Filed: March 31, 2010
    Publication date: July 29, 2010
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Nishant Sinha, Dinesh Chopra, Fred D. Fishburn
  • Patent number: 7713817
    Abstract: Electroless plating can be utilized to form electrical interconnects associated with semiconductor substrates. For instance, a semiconductor substrate can be formed to have a dummy structure thereover with a surface suitable for electroless plating, and to also have a digit line thereover having about the same height as the dummy structure. A layer can be formed over the dummy structure and digit line, and openings can be formed through the layer to the upper surfaces of the dummy structure and digit line. Subsequently, a conductive material can be electroless plated within the openings to form electrical contacts within the openings. The opening extending to the dummy structure can pass through a capacitor electrode, and accordingly the conductive material formed within such opening can be utilized to form electrical contact to the capacitor electrode.
    Type: Grant
    Filed: January 2, 2008
    Date of Patent: May 11, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Nishant Sinha, Dinesh Chopra, Fred D. Fishburn
  • Patent number: 7674670
    Abstract: The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: March 9, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Kurt D. Beigel, Fred D. Fishburn, Rongsheng Yang
  • Patent number: 7659161
    Abstract: The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the etch stop and over the bitline contact locations, and trenches can be formed through the insulative material. Conductive material can be provided within the trenches to form bitline interconnect lines which are in electrical contact with the bitline contact locations, and which are electrically isolated from the storage node contact locations by the etch stop. In subsequent processing, openings can be formed through the etch stop to the storage node contact locations. Memory storage devices can then be formed within the openings and in electrical contact with the storage node contact locations.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: February 9, 2010
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Fred D. Fishburn
  • Patent number: 7638392
    Abstract: The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.
    Type: Grant
    Filed: April 18, 2006
    Date of Patent: December 29, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Kurt D. Beigel, Fred D. Fishburn, Rongsheng Yang
  • Patent number: 7538036
    Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.
    Type: Grant
    Filed: August 31, 2005
    Date of Patent: May 26, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Brett W. Busch, Luan C. Tran, Ardavan Niroomand, Fred D. Fishburn, Yoshiki Hishiro, Ulrich C. Boettiger, Richard D. Holscher
  • Patent number: 7517754
    Abstract: The invention includes methods of forming semiconductor constructions in which electrically conductive structures are formed between bitlines to electrically connect with storage node contacts. The bitlines can be formed within trenches having faceted top portions. The invention also includes semiconductor structures containing trenches with faceted top portions, and containing bitlines within the trenches.
    Type: Grant
    Filed: January 9, 2008
    Date of Patent: April 14, 2009
    Assignee: Micron Technology, Inc.
    Inventors: Terrence B. McDaniel, Scott A. Southwick, Fred D. Fishburn
  • Patent number: 7445990
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Grant
    Filed: February 24, 2006
    Date of Patent: November 4, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Brett W. Busch, Fred D. Fishburn, James Rominger
  • Patent number: 7442600
    Abstract: The invention includes methods of forming channel region implants for two transistor devices simultaneously, in which a mask is utilized to block a larger percentage of a channel region location of one of the devices relative to the other. The invention also pertains to methods of forming capacitor structures in which a first capacitor electrode is spaced from a semiconductor substrate by a dielectric material, a second capacitor electrode comprises a conductively-doped diffusion region within the semiconductor material, and a capacitor channel region location is beneath the dielectric material and adjacent the conductively-doped diffusion region. An implant mask is formed to cover only a first portion of the capacitor channel region location and to leave a second portion of the capacitor channel region location uncovered. While the implant mask is in place, dopant is implanted into the uncovered second portion of the capacitor channel region location.
    Type: Grant
    Filed: August 24, 2004
    Date of Patent: October 28, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Hongmei Wang, Kurt D. Beigel, Fred D. Fishburn, Rongsheng Yang
  • Patent number: 7440255
    Abstract: A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.
    Type: Grant
    Filed: July 21, 2003
    Date of Patent: October 21, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Brent A. McClure, Casey R. Kurth, Shenlin Chen, Debra K. Gould, Lyle D. Breiner, Er-Xuan Ping, Fred D. Fishburn, Hongmei Wang
  • Patent number: 7413952
    Abstract: A plurality of capacitor electrode openings is formed within capacitor electrode-forming material. A first set of the openings is formed to a depth which is greater within the capacitor electrode-forming material than is a second set of the openings. Conductive first capacitor electrode material is formed therein. A sacrificial retaining structure is formed elevationally over both the first capacitor electrode material and the capacitor electrode-forming material, leaving some of the capacitor electrode-forming material exposed. With the retaining structure in place, at least some of the capacitor electrode-forming material is etched from the substrate effective to expose outer sidewall surfaces of the first capacitor electrode material.
    Type: Grant
    Filed: December 26, 2006
    Date of Patent: August 19, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Brett W. Busch, Fred D. Fishburn, James Rominger
  • Patent number: 7384847
    Abstract: The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the etch stop and over the bitline contact locations, and trenches can be formed through the insulative material. Conductive material can be provided within the trenches to form bitline interconnect lines which are in electrical contact with the bitline contact locations, and which are electrically isolated from the storage node contact locations by the etch stop. In subsequent processing, openings can be formed through the etch stop to the storage node contact locations. Memory storage devices can then be formed within the openings and in electrical contact with the storage node contact locations.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: June 10, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Fred D. Fishburn
  • Patent number: 7368372
    Abstract: The invention includes methods of fabricating multiple sets of field effect transistors. In one implementation, an etch stop layer is formed over an insulative capping layer which is formed over a conductive gate layer formed over a substrate. The etch stop layer, the insulative capping layer, and the conductive gate layer are patterned and etched to form a first set of conductive gate constructions over the substrate. A dielectric material is formed and planarized over the first set of gate constructions. Thereafter, the insulative capping layer and the conductive gate layer are patterned and etched to form a second set of conductive gate constructions over the substrate. Other aspects and implementations are contemplated.
    Type: Grant
    Filed: March 21, 2006
    Date of Patent: May 6, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Fred D. Fishburn, Martin Ceredig Roberts
  • Patent number: 7341909
    Abstract: The invention includes methods of forming semiconductor constructions in which electrically conductive structures are formed between bitlines to electrically connect with storage node contacts. The bitlines can be formed within trenches having faceted top portions. The invention also includes semiconductor structures containing trenches with faceted top portions, and containing bitlines within the trenches.
    Type: Grant
    Filed: April 6, 2005
    Date of Patent: March 11, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Terrence B. McDaniel, Scott A. Southwick, Fred D. Fishburn
  • Patent number: 7335935
    Abstract: Electroless plating can be utilized to form electrical interconnects associated with semiconductor substrates. For instance, a semiconductor substrate can be formed to have a dummy structure thereover with a surface suitable for electroless plating, and to also have a digit line thereover having about the same height as the dummy structure. A layer can be formed over the dummy structure and digit line, and openings can be formed through the layer to the upper surfaces of the dummy structure and digit line. Subsequently, a conductive material can be electroless plated within the openings to form electrical contacts within the openings. The opening extending to the dummy structure can pass through a capacitor electrode, and accordingly the conductive material formed within such opening can be utilized to form electrical contact to the capacitor electrode.
    Type: Grant
    Filed: July 22, 2005
    Date of Patent: February 26, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Nishant Sinha, Dinesh Chopra, Fred D. Fishburn
  • Patent number: 7329618
    Abstract: An ion implanting method includes forming a pair of spaced and adjacent features projecting outwardly from a substrate. At least outermost portions of the pair of spaced features are laterally pulled away from one another with a patterned photoresist layer received over the features and which has an opening therein received intermediate the pair of spaced features. While such spaced features are laterally pulled, a species is ion implanted into substrate material which is received lower than the pair of spaced features. After the ion implanting, the patterned photoresist layer is removed from the substrate. Other aspects and implementations are contemplated.
    Type: Grant
    Filed: June 28, 2005
    Date of Patent: February 12, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Randall Culver, Terrence B. McDaniel, Hongmei Wang, James L. Dale, Richard H. Lane, Fred D. Fishburn
  • Patent number: 7321149
    Abstract: A patterned mask can be formed as follows. A first patterned photoresist is formed over a masking layer and utilized during a first etch into the masking layer. The first etch extends to a depth in the masking layer that is less than entirely through the masking layer. A second patterned photoresist is subsequently formed over the masking layer and utilized during a second etch into the masking layer. The combined first and second etches form openings extending entirely through the masking layer and thus form the masking layer into the patterned mask. The patterned mask can be utilized to form a pattern in a substrate underlying the mask. The pattern formed in the substrate can correspond to an array of capacitor container openings. Capacitor structure can be formed within the openings. The capacitor structures can be incorporated within a DRAM array.
    Type: Grant
    Filed: July 22, 2005
    Date of Patent: January 22, 2008
    Assignee: Micron Technology, Inc.
    Inventors: Brett W. Busch, Luan C. Tran, Ardavan Niroomand, Fred D. Fishburn, Richard D. Holscher
  • Patent number: 7288806
    Abstract: The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the etch stop and over the bitline contact locations, and trenches can be formed through the insulative material. Conductive material can be provided within the trenches to form bitline interconnect lines which are in electrical contact with the bitline contact locations, and which are electrically isolated from the storage node contact locations by the etch stop. In subsequent processing, openings can be formed through the etch stop to the storage node contact locations. Memory storage devices can then be formed within the openings and in electrical contact with the storage node contact locations.
    Type: Grant
    Filed: April 21, 2005
    Date of Patent: October 30, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Fred D. Fishburn
  • Patent number: 7279379
    Abstract: The invention includes memory arrays, and methods which can be utilized for forming memory arrays. A patterned etch stop can be used during memory array fabrication, with the etch stop covering storage node contact locations while leaving openings to bitline contact locations. An insulative material can be formed over the etch stop and over the bitline contact locations, and trenches can be formed through the insulative material. Conductive material can be provided within the trenches to form bitline interconnect lines which are in electrical contact with the bitline contact locations, and which are electrically isolated from the storage node contact locations by the etch stop. In subsequent processing, openings can be formed through the etch stop to the storage node contact locations. Memory storage devices can then be formed within the openings and in electrical contact with the storage node contact locations.
    Type: Grant
    Filed: April 26, 2004
    Date of Patent: October 9, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Luan C. Tran, Fred D. Fishburn