Patents by Inventor Fred E. Stanke
Fred E. Stanke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20040174524Abstract: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.Type: ApplicationFiled: March 9, 2004Publication date: September 9, 2004Inventors: Adam Norton, Abdurrahman Sezginer, Fred E. Stanke, Rodney Smedt
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Publication number: 20040167722Abstract: A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure as part of a real-time optical measurement process. The interpolated optical response is a continuous and (in a preferred embodiment) smooth function of measurement parameters, and it matches the theoretically-calculated optical response at the database-stored interpolation points.Type: ApplicationFiled: February 12, 2004Publication date: August 26, 2004Inventors: Kenneth C. Johnson, Fred E. Stanke
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Patent number: 6778273Abstract: An optical measurement system for evaluating a sample has a azimuthally rotatable measurement head. A motor-driven rotating mechanism is coupled to the measurement head to allow the optics to rotate with respect to the sample. In particular, a preferred embodiment is a polarimetric scatterometer (FIG. 1) for measuring optical properties of a periodic structure on a wafer sample (12). This scatterometer has optics (30) directing a polarized illumination beam at non-normal incidence onto the periodic structure. In addition to a polarizer (8), the illumination path can also be provided with an E-O modulator for modulating the polarization. The measurement head optics also collect light reflected from the periodic structure and feed that light to a spectrometer (17) for measurement. A polarization beamsplitter (18) is provided in the collection path so that both S and P polarization from the sample can be separately measured.Type: GrantFiled: March 29, 2002Date of Patent: August 17, 2004Assignee: Therma-Wave, Inc.Inventors: Adam E. Norton, Abdurrahman Sezginer, Fred E. Stanke
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Patent number: 6768967Abstract: A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure as part of a real-time optical measurement process. The interpolated optical response is a continuous and (in a preferred embodiment) smooth function of measurement parameters, and it matches the theoretically-calculated optical response at the database-stored interpolation points.Type: GrantFiled: August 10, 2001Date of Patent: July 27, 2004Assignee: Therma-Wave, Inc.Inventors: Kenneth C. Johnson, Fred E. Stanke
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Patent number: 6753961Abstract: A spectroscopic ellipsometer having a multiwavelength light source, spectrometer (or wavelength-scanning monochromator and photodetector), a polarizer and polarization analyzer, and one or more objectives in the illumination and collection light paths, further comprises a stationary polarization modulator that modulates the light polarization versus wavelength. Modulator can be an optically active crystal rotating the linear polarization plane by a different angle for each wavelength or a non-achromatic waveplate retarder that varies the relative phase delay of the polarization components periodically over wavelength. The measured spectrum can be used to characterize selected features or parameters of a sample, e.g. by comparison with one or more theoretical spectra.Type: GrantFiled: September 18, 2001Date of Patent: June 22, 2004Assignee: Therma-Wave, Inc.Inventors: Adam E. Norton, Kenneth C. Johnson, Fred E. Stanke, Abdurrahman Sezginer
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Patent number: 6738136Abstract: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.Type: GrantFiled: November 7, 2002Date of Patent: May 18, 2004Assignee: Therma-Wave, Inc.Inventors: Adam Norton, Abdurrahman Sezginer, Fred E. Stanke, Rodney Smedt
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Publication number: 20040080757Abstract: This invention is an instrument adaptable for integration into a process tool the combines a number of instruments for surface characterization. As an integrated process monitor, the invention is capable of monitoring surface dishing, surface erosion and thickness of residue layers on work-pieces with little time delay. The invention is adaptable to making measurements while a wafer or work-piece is either wet or dry. A preferred embodiment includes an integrated optical profiler adapted to surface profiling in the presence of optical interference arising from retro-reflections from underlying optical non-uniformities Alternate embodiments include an integrated stylus profiler with vibration isolation.Type: ApplicationFiled: September 3, 2003Publication date: April 29, 2004Inventors: Fred E. Stanke, Talat F. Hasan, Michael Weber
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Patent number: 6690473Abstract: This invention is an instrument adaptable for integration into a process tool the combines a number of instruments for surface characterization. As an integrated process monitor, the invention is capable of monitoring surface dishing, surface erosion and thickness of residue layers on work-pieces with little time delay. The invention is adaptable to making measurements while a wafer or work-piece is either wet or dry. A preferred embodiment includes an integrated optical profiler adapted to surface profiling in the presence of optical interference arising from retro-reflections from underlying optical non-uniformities. Alternate embodiments include an integrated stylus profiler with vibration isolation.Type: GrantFiled: February 1, 2000Date of Patent: February 10, 2004Assignee: Sensys Instruments CorporationInventors: Fred E. Stanke, Talat F. Hasan, Michael Weber
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Publication number: 20040018653Abstract: A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.Type: ApplicationFiled: July 16, 2003Publication date: January 29, 2004Inventors: Kenneth C. Johnson, Fred E. Stanke
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Patent number: 6667805Abstract: A small-spot imaging, spectrometry instrument for measuring properties of a sample has a polarization-scrambling element, such as a Lyot depolarizer, incorporated between the polarization-introducing components of the system, such as the beamsplitter, and the microscope objective of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent, may be narrower than the wavelength resolution of the instrument.Type: GrantFiled: August 17, 2001Date of Patent: December 23, 2003Assignee: Sensys Instruments CorporationInventors: Adam E. Norton, Kenneth C. Johnson, Fred E. Stanke
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Publication number: 20030184742Abstract: This invention is an apparatus for imaging metrology, which in particular embodiments may be integrated with a processor station such that a metrology station is apart from but coupled to a process station. The metrology station is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other.Type: ApplicationFiled: March 26, 2003Publication date: October 2, 2003Inventors: Fred E. Stanke, Clinton B. Carlisle, Hung Pham, Edric Tong, Douglas E. Ruth, James M. Cahill, Michael Weber-Graban, Elliot Burke
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Patent number: 6623991Abstract: A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.Type: GrantFiled: October 31, 2001Date of Patent: September 23, 2003Assignee: Therma-Wave, Inc.Inventors: Kenneth C. Johnson, Fred E. Stanke
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Patent number: 6572456Abstract: A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described.Type: GrantFiled: August 10, 2001Date of Patent: June 3, 2003Assignee: Sensys Instruments CorporationInventors: Michael Weber-Grabau, Ivelin A. Anguelov, Edric H. Tong, Adam E. Norton, Fred E. Stanke, Badru D. Hyatt
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Publication number: 20030090655Abstract: The invention is a method and apparatus for determining characteristics of a sample. The system and method provide for detecting a monitor beam reflected off a mirror, where the monitor beam corresponds to the intensity of light incident upon the sample. The system and method also provide for detecting a measurement beam, where the measurement beam has been reflected off the sample being characterized. Both the monitor beam and the measurement beam are transmitted through the same transmission path, and detected by the same detector. Thus, potential sources of variations between the monitor beam and the measurement beam which are not due to the characteristics of the sample are minimized. Reflectivity information for the sample can be determined by comparing data corresponding to the measurement beam relative to data corresponding the monitor beam.Type: ApplicationFiled: November 7, 2002Publication date: May 15, 2003Inventors: Adam Norton, Abdurrahman Sezginer, Fred E. Stanke, Rodney Smedt
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Patent number: 6563586Abstract: This invention is an apparatus for imaging metrology, which in particular embodiments may be integrated with a processor station such that a metrology station is apart from but coupled to a process station. The metrology station is provided with a first imaging camera with a first field of view containing the measurement region. Alternate embodiments include a second imaging camera with a second field of view. Preferred embodiments comprise a broadband ultraviolet light source, although other embodiments may have a visible or near infrared light source of broad or narrow optical bandwidth. Embodiments including a broad bandwidth source typically include a spectrograph, or an imaging spectrograph. Particular embodiments may include curved, reflective optics or a measurement region wetted by a liquid. In a typical embodiment, the metrology station and the measurement region are configured to have 4 degrees of freedom of movement relative to each other.Type: GrantFiled: July 10, 2000Date of Patent: May 13, 2003Assignee: Therma-Wave, Inc.Inventors: Fred E. Stanke, Clinton B. Carlisle, Hung Pham, Edric Tong, Douglas E. Ruth, James M. Cahill, Michael Weber, Elliot Burke
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Publication number: 20030020912Abstract: An optical measurement system for evaluating a sample has a azimuthally rotatable measurement head. A motor-driven rotating mechanism is coupled to the measurement head to allow the optics to rotate with respect to the sample. In particular, a preferred embodiment is a polarimetric scatterometer (FIG. 1) for measuring optical properties of a periodic structure on a wafer sample (12). This scatterometer has optics (30) directing a polarized illumination beam at non-normal incidence onto the periodic structure. In addition to a polarizer (8), the illumination path can also be provided with an E-O modulator for modulating the polarization. The measurement head optics also collect light reflected from the periodic structure and feed that light to a spectrometer (17) for measurement. A polarization beamsplitter (18) is provided in the collection path so that both S and P polarization from the sample can be separately measured.Type: ApplicationFiled: March 29, 2002Publication date: January 30, 2003Inventors: Adam E. Norton, Abdurrahman Sezginer, Fred E. Stanke
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Patent number: 6510395Abstract: An apparatus for and method of determining the states on a wafer to be processed, e.g., whether residue in the form of metal is left on the surface of a wafer after chemical-mechanical polishing. The method comprises the steps of calculating first spectral signatures from a first set of measurement sites on one or more training wafers. Each measurement site is known to be in one of two or more states. In the case of only two states, the states could be “residue present” and “residue absent” states. The next step involves correlating the first spectral signatures to the states on the training wafer(s). The next step then involves calculating second spectral signatures from a second set of measurement sites on a wafer where the states are unknown. The final step is determining the states on the wafer to be processed based on the second spectral signatures.Type: GrantFiled: March 1, 2001Date of Patent: January 21, 2003Assignee: Sensys Instruments CorporationInventor: Fred E. Stanke
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Publication number: 20020158193Abstract: Alignment accuracy between two or more patterned layers is measured using a metrology target comprising substantially overlapping diffraction gratings formed in a test area of the layers being tested. An optical instrument illuminates all or part of the target area and measures the optical response. The instrument can measure transmission, reflectance, and/or ellipsometric parameters as a function of wavelength, polar angle of incidence, azimuthal angle of incidence, and/or polarization of the illumination and detected light. Overlay error or offset between those layers containing the test gratings is determined by a processor programmed to calculate an optical response for a set of parameters that include overlay error, using a model that accounts for diffraction by the gratings and interaction of the gratings with each others' diffracted field. The model parameters might also take account of manufactured asymmetries.Type: ApplicationFiled: February 12, 2002Publication date: October 31, 2002Inventors: Abdurrahman Sezginer, Kenneth C. Johnson, Fred E. Stanke
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Publication number: 20020090743Abstract: A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.Type: ApplicationFiled: October 31, 2001Publication date: July 11, 2002Inventors: Kenneth Johnson, Fred E. Stanke
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Publication number: 20020065028Abstract: A wafer measurement apparatus (10, 110) and method for measuring a film thickness property of a wafer (30) that does not require a water bath or complicated wafer handling apparatus. The apparatus includes a chuck (16) having an upper surface (20) for supporting the wafer, and a perimeter (18). Also included is a metrology module (50) for measuring one or more film thickness properties. The metrology module is arranged adjacent the chuck upper surface and has a measurement window (60) with a lower surface (64) arranged substantially parallel to the chuck upper surface, thereby defining an open volume (68). The apparatus includes a water supply system in fluid communication with the open volume via nozzles (70) for flowing water through and back-filling the volume in a manner that does not produce bubbles within the volume. A catchment (40) surrounding the chuck may be used to catch water flowing out of the volume. Methods of performing measurements of one or more wafer film properties are also described.Type: ApplicationFiled: August 10, 2001Publication date: May 30, 2002Inventors: Michael Weber-Grabau, Ivelin A. Anguelov, Edric H. Tong, Adam E. Norton, Fred E. Stanke, Badru D. Hyatt