Abstract: A database interpolation method is used to rapidly calculate a predicted optical response characteristic of a diffractive microstructure as part of a real-time optical measurement process. The interpolated optical response is a continuous and (in a preferred embodiment) smooth function of measurement parameters, and it matches the theoretically-calculated optical response at the database-stored interpolation points.

Abstract: An apparatus for and method of determining the states on a wafer to be processed, e.g., whether residue in the form of metal is left on the surface of a wafer after chemical-mechanical polishing. The method comprises the steps of calculating first spectral signatures from a first set of measurement sites on one or more training wafers. Teach measurement site is are known to be one of two or more states. In the case of only two states, the states could be “residue present” and “residue absent” states. The next step involves correlating the first spectral signatures to the states on the training wafer(s). The next step then involves calculating second spectral signatures from a second set of measurement sites on a wafer where the states are unknown. The final step is determining the states on the wafer to be processed based on the second spectral signatures.

Abstract: A small-spot imaging, spectrometry instrument for measuring properties of a sample has a polarization-scrambling element, such as a Lyot depolarizer, incorporated between the polarization-introducing components of the system, such as the beamsplitter, and the microscope objective of the system. The Lyot depolarizer varies polarization with wavelength. Sinusoidal perturbation in the resulting measured spectrum can be removed by data processing techniques or, if the depolarizer is thick or highly birefringent, may be narrower than the wavelength resolution of the instrument.

Abstract: A wafer measurement station integrated within a process tool has a scatterometry instrument for measuring patterned features on wafers. A wafer handler feeds wafers between a cassette and one or more process stations of the process tool. Wafers presented to the measurement station are held on a wafer support, which may be moveable, and a scatterometry instrument has an optical measurement system that is moveable by a stage over the wafer support. A window isolates the moveable optics from the wafer. The optical measurement system are microscope-based optics forming a low NA system. The illumination spot size at the wafer is larger than a periodicity of the patterned features, and data processing uses a scattering model to analyze the optical signature of the collected light.

Abstract: A method of measuring at least one parameter associated with a portion of a sample having formed thereon one or more structures with at least two zones each having an associated zone reflectance property. The method includes the steps of illuminating the zones with broadband light, and measuring at least one reflectance property of light reflected from the at least two zones. The measurement includes a substantial portion of non-specularly scattered light, thereby increasing the quality of the measurement. The method further includes the step of fitting a parameterized model to the measured reflectance property. The parameterized model mixes the zone reflectance properties of the zones to account for partially coherent light interactions between the two zones.

Abstract: An improved technique for determining the thickness of a member, especially pipe such as fluid-filled casing in an earth borehole, includes the following steps: directing a pulse of ultrasonic energy toward the inner surface of the pipe, and receiving and storing, as a function of time, signals representative of ultrasonic energy reflected from the inner surface of the pipe; determining, from the stored signals, the arrival time of the initial echo from the inner surface; determining, from the stored signals, the arrival time and the amplitude of a first candidate initial echo from the outer surface of the pipe; performing a reverse search on the stored signals to determine, from stored signals at times earlier than the arrival time of the first candidate, the arrival time and the amplitude of a second candidate initial echo from the outer surface; comparing amplitudes of the first and second candidates, and selecting, based on the comparison, one of the first and second candidates as the actual outer surface

Abstract: An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined.

Abstract: An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined.

Abstract: A system is disclosed that employs ultrasonic waves to perform in-situ measurements to determine the properties of films deposited on substrates in the course of various semiconductor or processing steps. In one embodiment a single transducer excites incident acoustic waves at multiple frequencies that reflect from the films. The reflected waves are received by the same transducer. An analysis system determines the phase shift of the received reflected waves and, based on the phase shift, determines the film properties. Other embodiments employ distinct source and receiving transducers. Embodiments are also disclosed that compensate the measured phase shift for temperature variations in the substrate. In one such system, temperature compensation is performed based on the processing of phase measurements made at multiple frequencies or incidence angles or with multiple ultrasonic modes. The disclosed techniques are equally applicable to determining the degree of erosion of chamber members.

Abstract: A method and apparatus for determining the hydraulic isolation of layers in an earth formation. The characteristics of various interfaces between the materials in the borehole are evaluated. An acoustic investigation is performed by directing an acoustic signal at a radial segment of the borehole. The signal passes through the casing and the fill material and produces a resulting signal which has travelled along a path encountering various interfaces in the borehole. This signal is processed to make hydraulic isolation determinations.

Abstract: An apparatus and method are disclosed for characterizing semiconductor wafers or other test objects that can support acoustic waves. Source and receiving transducers are configured in various arrangements to respectively excite and detect acoustic waves (e.g., Lamb waves) in a wafer to be characterized. Signals representing the detected waves are digitally processed and used to compute a measurement set correlated with the waves' velocity in the wafer. A characterization sensitivity is provided that describes how different wafer characteristics of interest vary with changes in the propagation of the acoustic waves. Using the characterization sensitivity and measurement sets computed at a setup time when all wafer characteristics are known and one or more process times when at least one of the characteristics is not known the perturbation in wafer characteristics between the setup and the process times can be determined.

Abstract: A method of analyzing a spatial series of waveforms, each waveform of which contains components arising from at least two substantially uncorrelated features, includes the steps of sorting the waveforms into groups or bins according to values of one or more of the features, determining a mean waveform for each group or bin, subtracting the mean waveform from each waveform in the group or bin, returning the waveforms to the original order of the series and determining a remaining feature. Binning, the process of sorting waveforms into groups based on values of features, can be performed for one feature determined from the waveform or for several features. All that is required is that the binning criteria are substantially uncorrelated with the feature of interest. An example of a binning criterion can be frequency or period of a component of the waveform. Also a value of a physical parameter calculated from the waveform can be used as a binning criterion.

Abstract: An improved technique for determining the thickness of a member, especially pipe such as fluid-filled casing in an earth borehole, includes the following steps: directing a pulse of ultra-sonic energy toward the inner surface of the pipe and receiving/storing, as a function of time, signals representative of ultra-sonic energy reflected from the inner surface of the pipe; determining, from the stored signals, the arrival or the initial echo from the inner surface; determining from the stored signals, the arrival and the amplitude of a first candidate initial echo from the outer surface of the pipe; performing a reverse search on the stored signals to determine, from stored signals at times earlier than the arrival time of the first candidate the arrival and the amplitude of a second candidate initial echo from the outer surface; comparing amplitudes of the first and second candidates and selecting, based on the comparison, one of the first and second candidates as the actual outer surface echo; and determinin

Abstract: A method and apparatus for spatially filtering a signal set to enhance interface echoes representing a borehole configuration. The spatial filtering technique provides information regarding the various interfaces formed between materials in the borehole environment, as well as thicknesses of the various materials present in the borehole. Further, the presence of channels formed during the cementing procedure are detected.

Abstract: The present invention is directed to a method of calculating the impedance of a material behind the section of a casing. An acoustic excitation pulse is directed towards a section of the casing, resulting in a return waveform having a reverberation segment and an initial reflection segment. The return waveform is analyzed to choose a resonance frequency indicative of the casing's nominal thickness. The return waveform is bandpass filtered about the chosen frequency. A time window of the reverberation segment is selected, and the energy content in the time window of the filtered reverberation segment is calculated. Both the bandpass filter and time windows are selected based on the chosen resonance frequency, thereby removing variations in the thickness of the casing. The energy content calculation produces a cementation signal indicative of the impedance of the cement behind the section of the casing. The impedance value is indicative of the cement quality.