Patents by Inventor Frederick T Chen
Frederick T Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10573807Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: GrantFiled: December 11, 2017Date of Patent: February 25, 2020Assignee: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20180375020Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: ApplicationFiled: December 11, 2017Publication date: December 27, 2018Applicant: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9847479Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: GrantFiled: July 20, 2017Date of Patent: December 19, 2017Assignee: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20170317276Abstract: A phase-change memory element is provided. The phase-change memory element may include an electrode; a phase-change material that contacts the electrode; a first conductor that contacts the phase-change material; and a second conductor that contacts the phase-change material. The second conductor may be electrically connected to the first conductor only through the phase-change material, and each of the first and second conductors may be electrically connected to the electrode only through the phase-change material.Type: ApplicationFiled: July 20, 2017Publication date: November 2, 2017Applicant: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9735352Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: December 28, 2015Date of Patent: August 15, 2017Assignee: GULA CONSULTING LIMITED LIABILITY COMPANYInventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20160111636Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: ApplicationFiled: December 28, 2015Publication date: April 21, 2016Applicant: HIGGS OPL. CAPITAL LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9257641Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.Type: GrantFiled: September 17, 2014Date of Patent: February 9, 2016Assignee: Industrial Technology Research InstituteInventors: Frederick T. Chen, Tai-Yuan Wu, Yu-Sheng Chen, Wei-Su Chen, Pei-Yi Gu, Yu-De Lin
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Patent number: 9245924Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: October 23, 2014Date of Patent: January 26, 2016Assignee: HIGGS OPL. CAPITAL LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 9178143Abstract: A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.Type: GrantFiled: July 29, 2013Date of Patent: November 3, 2015Assignee: Industrial Technology Research InstituteInventors: Frederick T. Chen, Pei-Yi Gu
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Patent number: 9142769Abstract: A non-volatile memory cell and a magnetic field-partitioned non-volatile memory for multi-bit storage are provided. The non-volatile memory cell for multi-bit storage includes a bottom electrode. A resistance-changing memory material covers the bottom electrode. A top electrode including a high-mobility material is disposed on the resistance-changing memory material. The top electrode has two post portions supporting a bar-shaped portion. At least two bits are stored in portions of the resistance-changing memory material connecting to the top electrode when an external magnetic field is applied along different directions.Type: GrantFiled: October 9, 2014Date of Patent: September 22, 2015Assignee: Industrial Technology Research InstituteInventor: Frederick T Chen
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Patent number: 9087985Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: GrantFiled: February 26, 2014Date of Patent: July 21, 2015Assignee: HIGGS OPL.CAPITAL LLCInventor: Frederick T. Chen
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Publication number: 20150129827Abstract: Provided is a three-dimensional resistance memory including a stack of layers. The stack of layers is encapsulated in a dielectric layer and is adjacent to at least one opening in the encapsulating dielectric layer. At least one L-shaped variable resistance spacer is disposed on at least a portion of the sidewall of the opening adjacent to the stack of layers. An electrode layer fills the remaining portion of the opening.Type: ApplicationFiled: September 17, 2014Publication date: May 14, 2015Inventors: Frederick T. Chen, Tai-Yuan Wu, Yu-Sheng Chen, Wei-Su Chen, Pei-Yi Gu, Yu-De Lin
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Publication number: 20150097152Abstract: A non-volatile memory cell and a magnetic field-partitioned non-volatile memory for multi-bit storage are provided. The non-volatile memory cell for multi-bit storage includes a bottom electrode. A resistance-changing memory material covers the bottom electrode. A top electrode including a high-mobility material is disposed on the resistance-changing memory material. The top electrode has two post portions supporting a bar-shaped portion. At least two bits are stored in portions of the resistance-changing memory material connecting to the top electrode when an external magnetic field is applied along different directions.Type: ApplicationFiled: October 9, 2014Publication date: April 9, 2015Inventor: Frederick T CHEN
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Publication number: 20150041752Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: ApplicationFiled: October 23, 2014Publication date: February 12, 2015Inventors: Frederick T. Chen, Ming-Jinn Tsai
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Publication number: 20150028281Abstract: A resistive memory structure including at least one reactive layer, at least one electrode, and at least one resistance-changing material is provided. The reactive layer extends along a first direction and a second direction. The electrode extends at least along a third direction, wherein the first direction, the second direction, and the third direction are different from each other. At least part of the resistance-changing material is disposed between the reactive layer and the electrode. When ions diffuse from the resistance-changing material to the reactive layer or from the reactive layer to the resistance-changing material, resistance of the resistance-changing material changes.Type: ApplicationFiled: July 29, 2013Publication date: January 29, 2015Applicant: Industrial Technology Research InstituteInventors: Frederick T. Chen, Pei-Yi Gu
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Patent number: 8884260Abstract: A phase-change memory element with an electrically isolated conductor is provided. The phase-change memory element includes: a first electrode and a second electrode; a phase-change material layer electrically connected to the first electrode and the second electrode; and at least two electrically isolated conductors, disposed between the first electrode and the second electrode, directly contacting the phase-change material layers.Type: GrantFiled: October 24, 2013Date of Patent: November 11, 2014Assignee: Higgs Opl. Capital LLCInventors: Frederick T. Chen, Ming-Jinn Tsai
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Patent number: 8817521Abstract: A control method for at least one memory cell is disclosed. The memory cell includes a transistor and a resistor. The resistor is connected to the transistor in series between a first node and a second node. In a programming mode, the memory cell is programmed. When it is determined that the memory cell has been successfully programmed, impedance of the memory cell is in a first state. When it is determined that the memory cell has not been successfully programmed, a specific action is executed to reset the memory cell. The impedance of the memory cell is in a second state after the step resetting the memory cell. The impedance of the memory cell in the second state is higher than that of the memory cell in the first state.Type: GrantFiled: June 5, 2012Date of Patent: August 26, 2014Assignee: Industrial Technology Research InstituteInventors: Yu-Sheng Chen, Heng-Yuan Lee, Yen-Ya Hsu, Pang-Shiu Chen, Ching-Chih Hsu, Frederick T. Chen
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Publication number: 20140175370Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: ApplicationFiled: February 26, 2014Publication date: June 26, 2014Applicant: Higgs Opl. Capital LLCInventor: Frederick T. CHEN
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Patent number: 8716099Abstract: A phase-change memory element with side-wall contacts is disclosed, which has a bottom electrode. A non-metallic layer is formed on the electrode, exposing the periphery of the top surface of the electrode. A first electrical contact is on the non-metallic layer to connect the electrode. A dielectric layer is on and covering the first electrical contact. A second electrical contact is on the dielectric layer. An opening is to pass through the second electrical contact, the dielectric layer, and the first electrical contact and preferably separated from the electrode by the non-metallic layer. A phase-change material is to occupy one portion of the opening, wherein the first and second electrical contacts interface the phase-change material at the side-walls of the phase-change material. A second non-metallic layer may be formed on the second electrical contact. A top electrode contacts the top surface of the outstanding terminal of the second electrical contact.Type: GrantFiled: March 12, 2013Date of Patent: May 6, 2014Assignee: Higgs Opl. Capital LLCInventor: Frederick T. Chen
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Patent number: 8711601Abstract: A resistive random access memory (RRAM) cell including a first electrode, a second electrode, and a plurality of repeated sets of layers is provided. Each of the sets of layers includes a resistance-changing layer, a barrier layer, and an ionic exchange layer between the resistance-changing layer and the barrier layer, wherein a thickness of each of the resistance-changing layer, the barrier layer and the ionic exchange layer exceeds a Fermi wavelength, and the thickness each of the resistance-changing layer and ionic exchange layer are less than an electron mean free path. Further, a RRAM module including the aforesaid RRAM cell and a switch is also provided.Type: GrantFiled: December 28, 2011Date of Patent: April 29, 2014Assignee: Industrial Technology Research InstituteInventors: Frederick T. Chen, Heng-Yuan Lee, Yu-Sheng Chen