Abstract: The present disclosure discloses a bionic cuttlefish-typed underwater detection robot, including a bionic “cuttlefish”-typed body structure, a piezoelectric energy capture device, a circuit rectification and storage assembly and a power control assembly. The bionic “cuttlefish”-typed body structure includes a head and a main body; the piezoelectric energy capture device includes piezoelectric ceramic elements arranged around the main body and PVDF floating belts, and an end of each piezoelectric ceramic element is connected to a spherical spoiler component, the PVDF floating belts are evenly distributed at a tail end of the main body. The present disclosure adopts piezoelectric ceramic elements with spoiler components and PVDF floating belts to generate electricity, converts wave energy and ocean current energy into electric energy, powers the power control assembly of the detection robot.

Abstract: Methods and systems are disclosed for depositing an oxide in a recess of a substrate, including providing the substrate in a chamber, the substrate including at least one opening to the recess where the at least one opening is bordered by a perimeter in a surface area adjacent to and outside of the recess, where the recess includes an inner surface, pulsing an inhibitor into the chamber to preferentially deposit the inhibitor in a portion of the recess adjacent to at least one opening of the recess and on at least a portion of the surface area, pulsing a precursor into the chamber to chemisorb to the inner surface within the recess, pulsing an oxygen species into the chamber to form the oxide within the recess upon contact with the chemisorbed precursor, and repeating the above recited steps to deposit the oxide to a desired thickness level within the recess.

Abstract: A data processing method includes: displaying a document source control in a target application; displaying a to-be-authorized-document list in response to a trigger operation on the document source control, the to-be-authorized-document list including one or more document titles, the one or more document titles including a title that is in a document application and that corresponds to document data associated with a first object, and the first object being logged in to the document application through the target application; and displaying a first authorized-document list including a first title in response to a trigger operation on the to-be-authorized-document list (S103), the first title being a triggered document title, and the target application having a permission to perform service processing on document data corresponding to the first title.

Abstract: A method for depositing one or more layers on a substrate is disclosed. The method may comprise providing a substrate, etching a native oxide from a surface of the substrate responsive to exposure to an etchant, contacting an etched surface of the substrate with an oxidizing agent oxidizing a first layer of the substrate responsive to contact with the oxidizing agent and depositing a second layer on the first layer.

Abstract: Systems and methods for object-based content recommendation are described. A camera feed comprising a plurality of image frames is caused to be displayed at a client device. An object is detected within an image frame from the camera feed, the object corresponding with an object category. Responsive to detecting the object, an icon associated with the object category is selected and displayed at a position upon the camera feed. The icon corresponds with a media collection related to the object category. An input is received selecting the icon. Responsive to the input, a presentation of media items from the media collection is displayed at the client device. By detecting real-world objects and surfacing relevant virtual icons that link to associated media, an augmented reality experience is provided allowing virtual content to be overlaid and anchored to objects in reality.

Abstract: Method, system and apparatus for forming one or more metal oxide layers on a substrate is disclosed. An example method comprises a) providing a substrate in a reaction chamber, b) flowing a first precursor comprising zinc or gallium or a combination thereof and an oxygen species into the chamber to deposit a first oxide layer on a top surface of the substrate, c) flowing a second precursor into the chamber to deposit a second oxide layer on the first oxide layer wherein the second precursor comprises aluminum having at least one R ligand and at least one L ligand, wherein the R ligand is an alkyl ligand and wherein the R ligand and the L ligand are different and repeating steps b) or c) or a combination thereof until a desired thickness of the first oxide layer or the second oxide layer, or a combination thereof is achieved.

Abstract: A transmitter and a method for dynamically setting a current mode of the transmitter are provided. The transmitter includes a digital signal processing (DSP) circuit and a radio frequency (RF) circuit. The DSP circuit is configured to determine a target current mode by selecting one of multiple candidate current modes of the transmitter according to instantaneous transmitting (TX) information, wherein the instantaneous TX information includes at least one of a resource block (RB) information, a modulation and coding scheme (MCS), and an orthogonal frequency-division multiplexing (OFDM) type of an instantaneous TX signal. The RF circuit is configured to output the instantaneous TX signal, wherein at least one supply voltage and at least one bias voltage of a power amplifier (PA) of the RF circuit is controlled according to the target current mode. More particularly, the multiple candidate current modes correspond to different target power consumptions of the transmitter, respectively.

Abstract: A wafer supporting mechanism and a method for wafer dicing are provided. The wafer supporting mechanism includes a base portion and a support portion. The base portion includes a first gas channel and a first outlet connected to the first gas channel. The support portion is connected to the base portion and including a second gas channel connected to the first gas channel. An accommodation space is defined by the base portion and the support portion.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A method can comprise providing a zinc precursor to a reaction chamber comprising a substrate disposed therein; providing an oxygen species to the reaction chamber; forming a zinc oxide layer on the substrate in response to providing the zinc precursor and providing the oxygen species; and/or mitigating agglomeration of the zinc oxide layer. Mitigating agglomeration of the zinc oxide layer can comprise forming a capping layer on an outer surface of the zinc oxide layer such that the outer surface of the zinc oxide layer is not exposed to ambient oxygen, doping the zinc oxide layer with another material, and/or applying a post-deposition treatment to the zinc oxide layer.

Abstract: Methods and systems for forming structure comprising a threshold voltage tuning layer are disclosed. Exemplary methods include providing a treatment reactant to a reaction chamber to form a treated surface on the substrate surface and depositing threshold voltage tuning material overlying the treated surface. Additionally or alternatively, exemplary methods can include direct formation of metal silicide layers. Additionally or alternatively, exemplary methods can include use of an etchant.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: Provided is a substrate structure including a substrate body, electrical contact pads and an insulating protection layer disposed on the substrate body, wherein the insulating protection layer has openings exposing the electrical contact pads, and at least one of the electrical contact pads has at least a concave portion filled with a filling material to prevent solder material from permeating along surfaces of the insulating protection layer and the electric contact pads, thereby eliminating the phenomenon of solder extrusion. Thus, bridging in the substrate structure can be eliminated even when the bump pitch between two adjacent electrical contact pads is small. As a result, short circuits can be prevented, and production yield can be increased.

Abstract: A method for depositing an oxide film on a substrate by a cyclical deposition is disclosed. The method may include: depositing a metal oxide film over the substrate utilizing at least one deposition cycle of a first sub-cycle of the cyclical deposition process; and depositing a silicon oxide film directly on the metal oxide film utilizing at least one deposition cycle of a second sub-cycle of the cyclical deposition process. Semiconductor device structures including an oxide film deposited by the methods of the disclosure are also disclosed.

Abstract: Methods for forming a device structure including a high-k dielectric layer are disclosed. An exemplary method includes using a first cyclical deposition process to deposit a dielectric layer on a substrate and using a second cyclical deposition process to deposit a capping layer directly on the dielectric layer. The methods also include thermally annealing the dielectric layer with the capping layer directly thereon to form a high-k dielectric layer. Exemplary device structures are disclosure, such as metal-insulator-metal capacitor structures.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70° C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

Abstract: A power path switch circuit includes: a power transistor unit including: a first vertical double-diffused metal oxide semiconductor (VDMOS) device, wherein a first current outflow end of the first VDMOS device is coupled to an output end of a power path; and a second VDMOS device, wherein a first current inflow end of the first VDMOS device and a second current inflow end of the second VDMOS device are coupled with a supply end of the power path; and a voltage locking circuit coupled to the first current outflow end and the second current outflow end, for locking a voltage at the second current outflow end to a voltage at the first current outflow end, so that there is a predetermined ratio between a first conductive current flowing through the first VDMOS device and a second conductive current flowing through the second VDMOS device.

Abstract: Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

Abstract: A wafer supporting mechanism and a method for wafer dicing are provided. The wafer supporting mechanism includes a base portion and a support portion. The base portion includes a first gas channel and a first outlet connected to the first gas channel. The support portion is connected to the base portion and including a second gas channel connected to the first gas channel. An accommodation space is defined by the base portion and the support portion.