Abstract: A driving mechanism for supporting an optical member is provided, including a base, a frame, a movable portion, a driving module, and an adhesive member. The base includes a plurality of first sidewalls, and at least one recess is formed on the first sidewalls. The frame includes a plurality of second sidewalls, and at least one opening is formed on the second sidewalls. The base and the frame form a hollow box, and the opening corresponds to the recess. The movable portion and the driving module are disposed in the hollow box. The driving module can drive the movable portion to move relative to the base. The adhesive member is accommodated in the opening and the recess, and extended along the first sidewalls. The adhesive member is disposed between the first sidewalls and the second sidewalls.

Abstract: A semiconductor power device having shielded gate structure in an active area and trench field plate termination surrounding the active area is disclosed. A Zener diode connected between drain metal and source metal or gate metal for functioning as a SD or GD clamp diode. Trench field plate termination surrounding active area wherein only cell array located will not cause BV degradation when SD or GD poly clamped diode integrated.

Abstract: A camera module is provided, including a frame, a holder, an image sensor, a plate, an electromagnetic driving assembly, and an elastic element. The frame connects the holder with the plate. The holder is configured to sustain an optical lens, and the image sensor is disposed on the plate. The elastic element connects the frame with the plate. The electromagnetic driving assembly is disposed on the frame and the plate, and is configured to drive the plate and the image sensor to move with respect to the frame and the holder.

Abstract: An optical system includes a base, a first lens driving module, and a second lens driving module. The first lens driving module includes a first lens holder, a first magnet, and a first coil. The first lens holder is configured to hold a first optical element. The first coil corresponding to the first magnet is configured to drive the first lens holder to move relative to the base. The second lens driving module includes a second lens holder, a second magnet, and a second coil. The second lens holder is configured to hold a second optical element. The second coil corresponding to the second magnet is configured to drive the second lens holder to move relative to the base. The first magnet is disposed between the first and second lens holders, and no other magnet is disposed between the first and second lens holders except the first magnet.

Abstract: A trench semiconductor power device integrated with ESD clamp diodes for optimization of total perimeter of the ESD clamp diodes, wherein the ESD clamp diodes comprise multiple back to back Zener diodes with alternating doped regions of a first conductivity type next to a second conductivity type, wherein anode electrode of the ESD clamp diodes connects with trenched gates in active area for gate resistance reduction.

Abstract: A SGT MOSFET having ESD diode and a method of manufacturing the same are disclosed. The SGT trench MOSFET according to the present invention, has n+ doped shielded electrode in an N channel device and requires only two poly-silicon layers, making the device can be shrunk with reducing shielded gate width for Rds reduction without increasing switching loss and having dynamic switching instability.

Abstract: A driving mechanism for moving an optical element is provided, including a movable portion, a fixed portion, a driving assembly, and a first resilient element. The movable portion is for connecting the optical element. The movable portion is movable relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion. The first resilient element has a board structure. The movable portion is movably connected to the fixed portion via the first resilient element. The fixed portion includes a connection surface, a restricting surface, and a recessed portion. At least a portion of the first resilient element is disposed on the connection surface. The restricting surface contacts and restricts the movable portion. The recessed portion is located between the connection surface and the restricting surface, wherein the recessed portion is lower than the connection surface and the restricting surface.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a fixed part, a movable part, a first driving assembly, and a second driving assembly. The movable part moves relative to the fixed part and holds an optical element with an optical axis. The first driving assembly includes a first magnetic element and a first coil. The first magnetic element and the first coil are arranged along a first direction. The first driving assembly drives the movable part to move relative to the fixed part along a second direction. The second driving assembly includes a second magnetic element and a second coil. The second magnetic element and the second coil are arranged along the first direction. The second driving assembly drives the movable part to move relative to the fixed part along a third direction. The first direction, the second direction, and the third direction are different.

Abstract: An optical system is provided and includes a fixed assembly, a movable element, a movable assembly, and a driving module. The fixed assembly defines a main axis, and the fixed assembly has a casing on which a casing opening is formed, corresponding to the main axis. The movable element is movable relative to the fixed assembly and is connected to a first optical element. The movable assembly is connected to the movable element. The driving module is configured to drive the movable assembly so as to drive the movable element to move relative to the fixed assembly. The first optical element has a first section and a second section. When viewed along the main axis, the size of the first section is larger than the size of the casing opening, and the size of the second section is smaller than the size of the casing opening.

Abstract: A SGT MOSFET having ESD diode and a method of manufacturing the same are disclosed. The SGT trench MOSFET according to the present invention, has n+ doped shielded electrode in an N channel device and requires only two poly-silicon layers, making the device can be shrunk with reducing shielded gate width for Rds reduction without increasing switching loss and having dynamic switching instability.

Abstract: A trench MOSFET layout with multiple trenched floating gates and at least one trenched channel stop gate in termination area shorted with drain region is disclosed to make it feasibly achieved after die sawing. The layout consisted of multiple trench MOSFETs connected together with multiple sawing trenched gates across a space between two trench MOSFETs having a width same as scribe line. Dummy cells formed between an edge trench and active area act as buffer cells to absorb avalanche energy when gate bias is increasing for turning on channel, therefore, the UIS failure issue is avoided and the avalanche capability of the trench MOSFET is enhanced.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion connects to an optical element having a main axis. The movable portion is movable relative to the fixed portion. The driving assembly is used to drive the movable portion so that it moves relative to the fixed portion, wherein the movable portion comprises a first connecting portion that is movably connected to the fixed portion.

Abstract: A shielded gate trench MOSFET with multiple stepped oxide (MSO) structure surrounding the shielded gate in termination area is disclosed. The inventive structure can reduce specific on-resistance and support enough breakdown voltage, simultaneously. The device structure termination is achieved using angle implant of N and P columns.

Abstract: The present invention discloses a method of infrared spectrometric measurement of tunnel gas employing a gas measurement system including a gas collection unit, a gas analysis unit and a positioning indication unit for measuring the gas in the tunnel. The method performs sequential steps of installing the gas measurement system, starting the positioning indication unit for positioning one of the detection regions in the tunnel space, sampling the gas in the detection region through the gas collection unit, analyzing the gas by the gas analysis unit, generating a gas analysis result, and determining whether all of the detection regions are completed.

Abstract: An integrated circuit comprising a SGT MOSFET and a SBR is disclosed. The SBR horizontally disposed in different areas to the SGT MOSFET on single chip creates a low potential barrier for majority carrier in MOS channel, therefore has lower forward voltage and reverse leakage current than conventional Schottky Barrier Rectifier. Moreover, in some preferred embodiment, a MSO structure is applied to the shielded gate structure to further reduce the on-resistance.

Abstract: A trench MOSFET layout with multiple trenched floating gates and at least one trenched channel stop gate in termination area shorted with drain region is disclosed to make it feasibly achieved after die sawing. The layout consisted of multiple trench MOSFETs connected together with multiple sawing trenched gates across a space between two trench MOSFETs having a width same as scribe line. Dummy cells formed between an edge trench and active area act as butler cells to absorb avalanche energy when gate bias is increasing for turning on channel, therefore, the UIS failure issue is avoided and the avalanche capability of the trench MOSFET is enhanced.

Abstract: A SGT MOSFET having ESD diode and a method of manufacturing the same are disclosed. The SGT trench MOSFET according to the present invention, has n+ doped shielded electrode in an N channel device and requires only two poly-silicon layers, making the device can be shrunk with reducing shielded gate width for Rds reduction without increasing switching loss and having dynamic switching.

Abstract: A driving mechanism for moving an optical element is provided, including a housing, a frame, a holder, and a driving assembly. The frame is fixed to the housing and forms a depressed surface adjacent to the housing. Specifically, the depressed surface faces the housing and is not in contact with the housing. The holder is movably disposed in the housing for holding the optical element. The drive assembly is disposed in the housing to drive the holder and the optical element to move relative to the frame.

Abstract: A display device includes a substrate and an optical sensing unit disposed on the substrate. The optical sensing unit includes a photodiode, a dielectric layer, and a second electrode. The photodiode is disposed on the substrate and includes a sidewall and an upper surface. The dielectric layer is disposed on the substrate and on the sidewall of the photodiode, and is in contact with a first portion of the upper surface of the photodiode. The second electrode includes a first conductive layer and a second conductive layer, wherein the first conductive layer is disposed on a second portion of the upper surface of the photodiode, and the second conductive layer is disposed between the dielectric layer and the first conductive layer. The first portion of the upper surface of the photodiode encircles the second portion.

Abstract: A driving mechanism is provided, including a case, a holder and a driving module. The holder is disposed in the case for holding an optical member. The driving module is disposed in the case for driving the holder. The case is substantially quadrilateral and includes a first side and a second side. The driving module includes a first magnetic driving component winding on a periphery of the holder. The first magnetic driving component includes a first segment and a second segment that are respectively substantially parallel to the first side and the second side. The distance between the first segment and the first side is different from the distance between the second segment and the second side.