Abstract: A semiconductor power device having shielded gate structure in an active area and trench field plate termination surrounding the active area is disclosed. A Zener diode connected between drain metal and source metal or gate metal for functioning as a SD or GD clamp diode. Trench field plate termination surrounding active area wherein only cell array located will not cause BV degradation when SD or GD poly clamped diode integrated.

Abstract: A cryogen-free high-temperature superconductor undulator structure is provided. The superconductor undulator structure includes a magnetic core body and a coil structure. The magnetic core body includes a first and a second half magnetic pole arrays that are vertically aligned, a plurality of first winding cores in the first half magnetic pole array, and a plurality of second winding cores in the second half magnetic pole array. The coil structure is wound on the first winding cores and the second winding cores of the magnetic core body. The coil structure includes a plurality of first superconductor tapes in contact with each of the first winding cores and each of the second winding cores, and a plurality of second superconductor tapes, each of the second superconductor tapes is in contact with two adjacent first superconductor tapes. A method of manufacturing a cryogen-free high-temperature superconductor undulator structure is also provided.

Abstract: A cryogen-free high-temperature superconductor undulator structure is provided. The superconductor undulator structure includes a magnetic core body and a coil structure. The magnetic core body includes a first and a second half magnetic pole arrays that are vertically aligned, a plurality of first winding cores in the first half magnetic pole array, and a plurality of second winding cores in the second half magnetic pole array. The coil structure is wound on the first winding cores and the second winding cores of the magnetic core body. The coil structure includes a plurality of first superconductor tapes in contact with each of the first winding cores and each of the second winding cores, and a plurality of second superconductor tapes, each of the second superconductor tapes is in contact with two adjacent first superconductor tapes. A method of manufacturing a cryogen-free high-temperature superconductor undulator structure is also provided.

Abstract: The application discloses a bonding method, a display backplane and a system for manufacturing the display backplane. The method includes: providing a substrate, and forming a plurality of first metal bumps on the substrate; providing a transfer device to transfer the plurality of the first metal bumps to a TFT substrate to form a plurality of pairs of metal pads on the TFT substrate, wherein each pair of the metal pads include two of the first metal bumps; and providing a plurality of LED flip chips, and transferring the plurality of LED flip chips to the TFT substrate by using the transfer device to bond electrodes of each of the LED flip chips to one pair of the metal pads respectively.

Abstract: An optical member driving mechanism for driving an optical member having an optical axis is provided, including a fixed portion, a movable portion, a first elastic member, and a driving assembly. The movable portion is configured to hold the optical member, and is movably connected the fixed portion via the first elastic member. The driving assembly drives the movable portion to move along the optical axis within a range of motion. The range of motion includes a first limit moving range and a second limit moving range. The first limit moving range is the maximum distance that the movable portion can move toward the light-entering side, and the second limit moving range is the maximum distance that the movable portion can move toward the light-emitting side. When the movable portion is in a predetermined position, the first limit moving range is greater than the second limit moving range.

Abstract: An optical system is provided and includes a fixed assembly, a movable element, a movable assembly, a driving module and a stopping assembly. The fixed assembly defines a main axis. The movable element is movable relative to the fixed assembly and is connected to a first optical element. The movable assembly is connected to the movable element. The driving module is configured to drive the movable assembly so as to drive the movable element to move relative to the fixed assembly. The stopping assembly is configured to limit the range of motion of the movable element.

Abstract: The present invention discloses a method of infrared spectrometric measurement of tunnel gas employing a gas measurement system including a gas collection unit, a gas analysis unit and a positioning indication unit for measuring the gas in the tunnel. The method performs sequential steps of installing the gas measurement system, starting the positioning indication unit for positioning one of the detection regions in the tunnel space, sampling the gas in the detection region through the gas collection unit, analyzing the gas by the gas analysis unit, generating a gas analysis result, and determining whether all of the detection regions are completed.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a movable portion, a fixed portion, a driving assembly and a guiding assembly. The movable portion is configured to connect an optical member, and is movable relative to the fixed portion. The driving assembly is configured to drive the movable portion to move relative to the fixed portion. The guiding assembly is configured to limit the mode of movement for the movable portion relative to the fixed portion. The guiding assembly includes an intermediate element, the intermediate element contacts the fixed portion and is movable relative to the fixed portion. The guiding assembly further includes a first metallic element, the first metallic element includes metal and corresponds to the intermediate element.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a movable portion, a fixed portion, and a driving assembly. The movable portion connects to an optical element having a main axis. The movable portion is movable relative to the fixed portion. The driving assembly is used to drive the movable portion so that it moves relative to the fixed portion, wherein the movable portion comprises a first connecting portion that is movably connected to the fixed portion.

Abstract: The present invention introduces a new shielded gate trench MOSFETs wherein epitaxial layer having special multiple stepped epitaxial (MSE) layers with different doping concentrations decreasing in a direction from substrate to body regions, wherein each of the MSE layers has uniform doping concentration as grown. Specific on-resistance is significantly reduced with the special MSE structure. Moreover, in sore preferred embodiment, an MSO (multiple stepped oxide) structure is applied to the shielded gate structure to further reduce the specific on-resistance and enhance device ruggedness.

Abstract: An optical element driving mechanism is provided. The optical element driving mechanism includes a first holder, a second holder, a plate, a biasing assembly, and an electromagnetic driving assembly. The first holder holds a first optical element with a first optical axis. The second holder holds a second optical element with a second optical axis. The plate is disposed below the first holder and the second holder. The biasing assembly forces the first holder to move relative to the plate on a plane substantially perpendicular to the first optical axis, and includes a biasing element, wherein when a driving signal is applied to the biasing element, a length of the biasing element is changed. The electromagnetic driving assembly forces the second holder to move relative to the plate and comprising a first magnetic element and a coil.

Abstract: A voice coil motor assembly including a base, a frame, an elastic sheet, a housing, and a plurality of shock-absorbing components is provided. The frame is disposed on the base. The frame includes a bottom surface, a top surface, a plurality of side walls and a support frame. One side of the elastic sheet is disposed on the top surface of the frame and the other is disposed on the support frame. The housing is disposed above the base to receive the frame and the elastic sheet. The housing includes a housing top wall and a plurality of housing side walls surrounding the housing top wall. The shock-absorbing components are disposed on the frame and are sandwiched between the frame and the housing side walls of the housing, and/or between the support frame and the housing top wall of the housing.

Abstract: A method for classifying failures can determine consumer devices on-line as being repairable or not to be repaired. The method obtains a training set, the set including information as to total failure and information as to repairable failure. First key information in repairable failure and second key information in total failure are obtained. A first TF-IDF value of each first key information and a second TF-IDF value of each second key information are computed. A first feature bank is created based on the first TF-IDF value and a first threshold value, and a second feature bank is created based on the second TF-IDF value and a second threshold. Target failure is classified by the trained classifier. A failure classification is quickly achieved. An electronic device and a computer readable storage medium applying the method are also provided.

Abstract: A camera shutter for exposing or shielding a camera including a supporting portion, a winding assembly, a movable cover, and a magnet is provided. The winding assembly is capable of driving the magnet to move the movable cover along a first direction while a first current passes through the winding assembly to form a first magnetic field, and to make the shielding side of the movable cover shield the camera. The winding assembly is also capable of driving the magnet to move the movable cover along a second direction while a second current passes through the winding assembly to form a second magnetic field, and to make the shielding side of the movable cover away from the camera to expose the camera.

Abstract: A SGT MOSFET having ESD diode and a method of manufacturing the same are disclosed. The SGT trench MOSFET according to the present invention, has n+ doped shielded electrode in an N channel device and requires only two poly-silicon layers, making the device can be shrunk with reducing shielded gate width for Rds reduction without increasing switching loss and having dynamic switching instability.

Abstract: The present disclosure provides a camera device with optical image stabilization, comprising: a base, a first carrying member, a camera module, a first optical compensating component, a second optical compensating component, and a guiding component. The first carrying member is slidably assembled to the base. The second carrying member is movably assembled to the first carrying member. The first force interaction member and the second force interaction member are configured to be force-interacted. The second optical compensating component comprises a third force interaction member disposed on the base and a fourth force interaction member disposed on the first carrying member. The guiding component is connected with the base and the first carrying member. The third force interaction member and the fourth force interaction member are configured to be force-interacted.

Abstract: A photographing glasses including a frame and an image capturing module is provided. The frame includes a first end, a second end, and a connecting portion. The image capturing module is disposed at the first end or the second end. The image capturing module includes a camera unit and a lens switch. The lens switch includes a shielding element, and the shielding element is movably disposed on a side of the camera unit. While the lens switch is in an open state, the camera unit is exposed by the shielding element. While the lens switch is in a closed state, the camera unit is blocked by the shielding element.

Abstract: A camera device with image compensation and autofocus function, comprising a first carrying member, a second carrying member, a camera module, a first optical compensation component, a third carrying member, and an autofocus component. The second carrying member is movably assembled to the first carrying member. The first optical compensation component comprises a first force interaction member disposed at the first carrying member and a second force interaction member disposed at the second carrying member, which generate force interaction, allowing the second carrying member to move in the direction of a first axis or/and a second axis intersecting with an optical axis of the optical lens for optical compensation for the optical lens. The third carrying member bears the optical lens and is movably disposed on the second carrying member. The third carrying member could move along an optical axis of the optical lens.

Abstract: A SiC SJ trench MOSFET having first and second type gate trenches for formation of gate electrodes and super junction regions is disclosed. The gate electrodes are disposed into the first type gate trenches having a thick oxide layer on trench bottom. The super junction regions are formed surrounding the second type gate trenches filled up with the thick oxide layer. The device further comprises gate oxide electric field reducing regions adjoining lower surfaces of body regions and space apart from the gate trenches.