Abstract: An improved SiC trench MOSFET having first and second type gate trenches for formation of a gate electrode, and a grounded P-shield region under the gate electrode for gate oxide electric-field reduction is disclosed. The gate electrodes are disposed into the first type gate trench having a thick oxide layer on trench bottom. The grounded P-shield region surrounding the second type gate trench filled up with the thick oxide layer is connected with a source metal through a grounded P region. The device further comprises a current spreading region surrounding the first type gate trench for on-resistance reduction.

Abstract: An image compensation device and a prism carrying mechanism thereof. The prism carrying mechanism comprises a base and a pair of prism carrying members. The base comprises a base body, a light passing hole disposed at the base body, and a plurality of first sliding assembling parts integrally formed on the same side of the base body. Each of the prism carrying members comprises a carrying member body, a prism assembling part disposed at the carrying member body and corresponding to the light passing hole, and a plurality of second sliding assembling parts integrally formed on the same side of the carrying member body. The prism assembling parts of the pair of prism carrying members are oppositely and alternately disposed in an axial direction. The plurality of second sliding assembling parts are slidably assembled to the plurality of first sliding assembling parts respectively.

Abstract: An optical member driving mechanism is provided. The optical member driving mechanism includes a movable portion, a fixed portion, a driving assembly and a guiding assembly. The movable portion is connected to an optical member, and is movable relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion. The guiding assembly limits the mode of movement for the movable portion relative to the fixed portion.

Abstract: The present invention provides a display substrate and a display device. The display substrate comprises a backplate and a plurality of pixel units; each pixel unit of the pixel units comprises a white light LED; a collimating lens configured to collimate a white light beam; a prism layer configured to reflect the white light beam to generate monochromatic lights of different colors in a first direction and a second direction; transmittance controllers configured to modulate the transmittance of monochromatic lights of different colors; and scattering layers configured to scatter monochromatic lights of different colors. In the present application, achieving the double-sided display of a Micro-LED display device, increasing the functionality and interestingness of the display device, and reducing the workload for mass transfer of the Micro-LED display device and the complexity of circuit arrangements of the display device.

Abstract: A method for detecting defects in a GaN high electron mobility transistor is disclosed. The method includes steps of measuring a plurality of electrical characteristics of a GaN high electron mobility transistor, measuring the plurality of electrical characteristics after performing a deterioration test on the GaN high electron mobility transistor, irradiating the GaN high electron mobility transistor in turns with a plurality of light sources with different wavelengths and measuring the plurality of electrical characteristics after each irradiation of the GaN high electron mobility transistor by each of the plurality of light sources, and comparing changes of the plurality of electrical characteristics measured in the above steps to determine the defect location of the GaN high electron mobility transistor.

Abstract: The present invention relates to a composition comprising a 3D printed hydrogel, wherein at least two different populations of cells are embedded in the 3D printed hydrogel. The different populations of cells can produce one or more products. The 3D printed hydrogel can be lyophilized and rehydrated, and the cells can continue to produce the product. Also disclosed are methods of producing a product, and methods of producing a 3D printed hydrogel comprising different populations of cells.

Abstract: A driving system for moving several optical elements is provided, including a first module, a second module and a third module. The first, second and third modules respectively have a first, second and third terminal electrically connected an external circuit. The first terminal is on a first side of the first module, the second terminal is on a second side of the second module, and the third terminal is on a third side of the third module. Specifically, the first, second, and third terminals are located on the same side of the driving system.

Abstract: An optical member driving mechanism for driving an optical member having an optical axis is provided, including a fixed portion, a movable portion, a driving assembly, and a circuit board. The fixed portion includes a case and a frame, and a gap is formed therebetween. The movable portion is movably connected to the fixed portion, and configured to hold the optical member. The driving assembly can drive the movable portion to move relative to the fixed portion. The circuit board is disposed in the gap, and has a plate portion and a protruding portion. The protruding portion is disposed between the plate portion and the fixed portion, so as to tightly dispose the circuit board in the gap.

Abstract: A SiC SJ trench MOSFET having first and second type gate trenches for formation of gate electrodes and super junction regions is disclosed. The gate electrodes are disposed into the first type gate trenches having a thick oxide layer on trench bottom. The super junction regions are formed surrounding the second type gate trenches filled up with the thick oxide layer. The device further comprises gate oxide electric field reducing regions adjoining lower surfaces of body regions and space apart from the gate trenches.

Abstract: An improved SGT MOSFET having low on-resistance is disclosed in this invention by adding a current spreading region under body region and a method to manufacture the same. With a doping concentration higher than the drift region, the inventive current spreading region can help reducing on-resistance while remaining a target breakdown voltage. Meanwhile, the present invention also features a method of formation of a new MSO structure with LOCOS technique for further improving on-resistance.

Abstract: A SGT MOSFET having two stepped oxide (TSO) structure in gate trench is disclosed, wherein the TSO has thinner oxide thickness along upper sidewalls of the gate trench than along lower sidewalls of the gate trench. The BV can be enhanced as result of the electric filed reduction near channel region, on-resistance is thus reduced. The present invention further comprises a super junction region below the oxide charge balance region, making vertical electrical field more uniform, the BV is further enhanced and on-resistance is further reduced.

Abstract: A driving mechanism for moving an optical element is provided, including a movable portion, a fixed portion, a driving assembly, and a first resilient element. The movable portion is for connecting the optical element. The movable portion is movable relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion. The first resilient element has a board structure. The movable portion is movably connected to the fixed portion via the first resilient element. The fixed portion includes a connection surface, a restricting surface, and a recessed portion. At least a portion of the first resilient element is disposed on the connection surface. The restricting surface contacts and restricts the movable portion. The recessed portion is located between the connection surface and the restricting surface, wherein the recessed portion is lower than the connection surface and the restricting surface.

Abstract: An optical system is provided and includes a fixed assembly, a movable element and a driving module. The fixed assembly has a main axis. The movable element is movable relative to the fixed assembly, and the movable element is connected to a first optical element. The driving module is configured to drive the movable element to move relative to the fixed assembly.

Abstract: The present disclosure provides a base assembly of voice coil motor and a voice coil motor. The base assembly includes a base body having a first elastic piece connecting area, a lower elastic piece disposed on the first elastic piece connecting area, and a first terminal disposed in the base body. The first terminal has: a first conductive part disposed in the base body; a first terminal connecting part disposed on one side of the first conductive part and extending toward a direction away from the first conductive part, wherein a part of the first terminal connecting part protrudes from the first elastic piece connecting area and is connected with the lower elastic piece; and an engaging part disposed on one side of the first terminal connecting part and extending toward a direction away from the first terminal connecting part.

Abstract: The present disclosure provides a base assembly of voice coil motor and a voice coil motor. The base assembly includes a base body having an elastic piece connecting area with a protrusion; a lower elastic piece disposed on the elastic piece connecting area with a first connecting hole, a second connecting hole, and a first trench, the protrusion is exposed from the first connecting hole, and the first trench is disposed between the first connecting hole and the second connecting hole; a connecting piece; and a terminal having a conductive part and a terminal connecting part, wherein the conductive part is disposed in the base body, the terminal connecting part passes through the elastic piece connecting area and protrudes from the elastic piece connecting area, and a part of the terminal connecting part is exposed from the second connecting hole to be fixedly connected to the lower elastic piece.

Abstract: A semiconductor device package and manufacturing method thereof are provided. The semiconductor device package includes a first conductive structure, a second conductive structure, a connection element, a conductive member, an encapsulant and a binding layer. The first conductive structure includes a first circuit layer. The second conductive structure is disposed over the first conductive structure. The connection element is disposed on and electrically connected to the first circuit layer. The conductive member protrudes from the second conductive structure. The encapsulant is disposed between the first conductive structure and the second conductive structure. The binding layer is disposed between the second conductive structure and the encapsulant.

Abstract: A driving mechanism is provided, including a fixed portion, a movable portion, a driving assembly and a buffering element. The movable portion is movably connected to the fixed portion for holding an optical element having a main axis. The driving assembly is disposed in the fixed portion for moving the movable portion relative to the fixed portion. The buffering element is disposed between the movable portion and the fixed portion, wherein a stopping assembly is disposed on the fixed portion and/or the movable portion to limit the range of motion of the movable portion relative to the fixed portion, the buffering element is not in contact with the movable portion or the fixed portion when the movable portion is static, and the hardness of the buffering element is less than the hardness of the stopping assembly.

Abstract: A semiconductor power device having shielded gate structure in an active area and trench field plate termination surrounding the active area is disclosed. A Zener diode connected between drain metal and source metal or gate metal for functioning as a SD or GD clamp diode. Trench field plate termination surrounding active area wherein only cell array located will not cause BV degradation when SD or GD poly clamped diode integrated.